Electrophotographic patterning of thin-film silicon on glass foil

H. Gleskova, S. Wagner, D. S. Shen

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on approx.50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

Original languageEnglish
Pages (from-to)418-420
Number of pages3
JournalIEEE Electron Device Letters
Volume16
Issue number10
DOIs
Publication statusPublished - 1 Oct 1995

Fingerprint

Silicon
Metal foil
Masks
Thin film circuits
Glass
Thin films
Chromium
Amorphous silicon
Throughput
Substrates

Keywords

  • electrophotographic patterning
  • thin-film silicon

Cite this

Gleskova, H. ; Wagner, S. ; Shen, D. S. / Electrophotographic patterning of thin-film silicon on glass foil. In: IEEE Electron Device Letters. 1995 ; Vol. 16, No. 10. pp. 418-420.
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Electrophotographic patterning of thin-film silicon on glass foil. / Gleskova, H.; Wagner, S.; Shen, D. S.

In: IEEE Electron Device Letters, Vol. 16, No. 10, 01.10.1995, p. 418-420.

Research output: Contribution to journalArticle

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