Electrophotographic patterning of thin-film silicon on glass foil

H. Gleskova; S. Wagner; D. S. Shen

doi:10.1109/55.464803

Electrophotographic patterning of thin-film silicon on glass foil

H. Gleskova^*, S. Wagner, D. S. Shen

^*Corresponding author for this work

Electronic And Electrical Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on approx.50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

Original language	English
Pages (from-to)	418-420
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	16
Issue number	10
DOIs	https://doi.org/10.1109/55.464803
Publication status	Published - 1 Oct 1995

Keywords

electrophotographic patterning
thin-film silicon

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10.1109/55.464803

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N2 - We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on approx.50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

AB - We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on approx.50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

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KW - thin-film silicon

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Electrophotographic patterning of thin-film silicon on glass foil

Abstract

Keywords

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