Abstract
We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on approx.50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.
Original language | English |
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Pages (from-to) | 418-420 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 16 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1 Oct 1995 |
Keywords
- electrophotographic patterning
- thin-film silicon