Abstract
We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.
| Original language | English |
|---|---|
| Title of host publication | Proceeding of the second international workshop on active-matrix LCDs |
| Publisher | IEEE |
| Pages | 16-19 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 1995 |
| Event | Second International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., - Bethlehem, United States Duration: 25 Sep 1995 → 26 Sep 1995 |
Conference
| Conference | Second International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., |
|---|---|
| Country | United States |
| City | Bethlehem |
| Period | 25/09/95 → 26/09/95 |
Keywords
- electrophotographic
- patterning
- Si:H
- amorphous silicon
- thin film circuits
- substrates
- semiconductor thin films
- printing
- printers
- photoconductivity
- laser beam cutting
- glass
- etching
Cite this
Gleskova, H., Wagner, S., & Shen, D. (1995). Electrophotographic patterning of a-Si:H. In Proceeding of the second international workshop on active-matrix LCDs (pp. 16-19). IEEE. https://doi.org/10.1109/AMLCD.1995.540950