Electrophotographic patterning of a-Si:H

Helena Gleskova, S. Wagner, D. Shen

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

Original languageEnglish
Title of host publicationProceeding of the second international workshop on active-matrix LCDs
PublisherIEEE
Pages16-19
Number of pages4
DOIs
Publication statusPublished - 1995
EventSecond International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., - Bethlehem, United States
Duration: 25 Sep 199526 Sep 1995

Conference

ConferenceSecond International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95.,
CountryUnited States
CityBethlehem
Period25/09/9526/09/95

Keywords

  • electrophotographic
  • patterning
  • Si:H
  • amorphous silicon
  • thin film circuits
  • substrates
  • semiconductor thin films
  • printing
  • printers
  • photoconductivity
  • laser beam cutting
  • glass
  • etching

Cite this

Gleskova, H., Wagner, S., & Shen, D. (1995). Electrophotographic patterning of a-Si:H. In Proceeding of the second international workshop on active-matrix LCDs (pp. 16-19). IEEE. https://doi.org/10.1109/AMLCD.1995.540950