Abstract
We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.
Original language | English |
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Title of host publication | Proceeding of the second international workshop on active-matrix LCDs |
Publisher | IEEE |
Pages | 16-19 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1995 |
Event | Second International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., - Bethlehem, United States Duration: 25 Sep 1995 → 26 Sep 1995 |
Conference
Conference | Second International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., |
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Country/Territory | United States |
City | Bethlehem |
Period | 25/09/95 → 26/09/95 |
Keywords
- electrophotographic
- patterning
- Si:H
- amorphous silicon
- thin film circuits
- substrates
- semiconductor thin films
- printing
- printers
- photoconductivity
- laser beam cutting
- glass
- etching