Electrophotographic patterning of a-Si:H

Helena Gleskova; S. Wagner; D. Shen

doi:10.1109/AMLCD.1995.540950

Electrophotographic patterning of a-Si:H

Helena Gleskova, S. Wagner, D. Shen

Electronic And Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

Original language	English
Title of host publication	Proceeding of the second international workshop on active-matrix LCDs
Publisher	IEEE
Pages	16-19
Number of pages	4
DOIs	https://doi.org/10.1109/AMLCD.1995.540950
Publication status	Published - 1995
Event	Second International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., - Bethlehem, United States Duration: 25 Sep 1995 → 26 Sep 1995

Conference

Conference	Second International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95.,
Country/Territory	United States
City	Bethlehem
Period	25/09/95 → 26/09/95

Keywords

electrophotographic
patterning
Si:H
amorphous silicon
thin film circuits
substrates
semiconductor thin films
printing
printers
photoconductivity
laser beam cutting
glass
etching

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10.1109/AMLCD.1995.540950

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@inproceedings{b2e11017c80b4ec8b1b710b514a29885,

title = "Electrophotographic patterning of a-Si:H",

abstract = "We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates. ",

keywords = "electrophotographic, patterning, Si:H , amorphous silicon, thin film circuits , substrates, semiconductor thin films, printing, printers, photoconductivity , laser beam cutting , glass , etching ",

author = "Helena Gleskova and S. Wagner and D. Shen",

year = "1995",

doi = "10.1109/AMLCD.1995.540950",

language = "English",

pages = "16--19",

booktitle = "Proceeding of the second international workshop on active-matrix LCDs",

publisher = "IEEE",

note = "Second International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., ; Conference date: 25-09-1995 Through 26-09-1995",

}

TY - GEN

T1 - Electrophotographic patterning of a-Si:H

AU - Gleskova, Helena

AU - Wagner, S.

AU - Shen, D.

PY - 1995

Y1 - 1995

N2 - We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

AB - We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

KW - electrophotographic

KW - patterning

KW - Si:H

KW - amorphous silicon

KW - thin film circuits

KW - substrates

KW - semiconductor thin films

KW - printing

KW - printers

KW - photoconductivity

KW - laser beam cutting

KW - glass

KW - etching

U2 - 10.1109/AMLCD.1995.540950

DO - 10.1109/AMLCD.1995.540950

M3 - Conference contribution book

SP - 16

EP - 19

BT - Proceeding of the second international workshop on active-matrix LCDs

PB - IEEE

T2 - Second International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95.,

Y2 - 25 September 1995 through 26 September 1995

ER -

Electrophotographic patterning of a-Si:H

Abstract

Conference

Keywords

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