Electrophotographic patterning of a-Si:H

Helena Gleskova, S. Wagner, D. Shen

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

LanguageEnglish
Title of host publicationProceeding of the second international workshop on active-matrix LCDs
PublisherIEEE
Pages16-19
Number of pages4
DOIs
Publication statusPublished - 1995
EventSecond International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., - Bethlehem, United States
Duration: 25 Sep 199526 Sep 1995

Conference

ConferenceSecond International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95.,
CountryUnited States
CityBethlehem
Period25/09/9526/09/95

Fingerprint

masks
glass
thin films
amorphous silicon
chromium
foils

Keywords

  • electrophotographic
  • patterning
  • Si:H
  • amorphous silicon
  • thin film circuits
  • substrates
  • semiconductor thin films
  • printing
  • printers
  • photoconductivity
  • laser beam cutting
  • glass
  • etching

Cite this

Gleskova, H., Wagner, S., & Shen, D. (1995). Electrophotographic patterning of a-Si:H. In Proceeding of the second international workshop on active-matrix LCDs (pp. 16-19). IEEE. https://doi.org/10.1109/AMLCD.1995.540950
Gleskova, Helena ; Wagner, S. ; Shen, D. / Electrophotographic patterning of a-Si:H. Proceeding of the second international workshop on active-matrix LCDs. IEEE, 1995. pp. 16-19
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title = "Electrophotographic patterning of a-Si:H",
abstract = "We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.",
keywords = "electrophotographic, patterning, Si:H , amorphous silicon, thin film circuits , substrates, semiconductor thin films, printing, printers, photoconductivity , laser beam cutting , glass , etching",
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language = "English",
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booktitle = "Proceeding of the second international workshop on active-matrix LCDs",
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Gleskova, H, Wagner, S & Shen, D 1995, Electrophotographic patterning of a-Si:H. in Proceeding of the second international workshop on active-matrix LCDs. IEEE, pp. 16-19, Second International Workshop on Active Matrix Liquid Crystal Displays, 1995. AMLCDs '95., , Bethlehem, United States, 25/09/95. https://doi.org/10.1109/AMLCD.1995.540950

Electrophotographic patterning of a-Si:H. / Gleskova, Helena; Wagner, S.; Shen, D.

Proceeding of the second international workshop on active-matrix LCDs. IEEE, 1995. p. 16-19.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - Electrophotographic patterning of a-Si:H

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AU - Wagner, S.

AU - Shen, D.

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N2 - We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

AB - We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

KW - electrophotographic

KW - patterning

KW - Si:H

KW - amorphous silicon

KW - thin film circuits

KW - substrates

KW - semiconductor thin films

KW - printing

KW - printers

KW - photoconductivity

KW - laser beam cutting

KW - glass

KW - etching

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Gleskova H, Wagner S, Shen D. Electrophotographic patterning of a-Si:H. In Proceeding of the second international workshop on active-matrix LCDs. IEEE. 1995. p. 16-19 https://doi.org/10.1109/AMLCD.1995.540950