Electronic properties of very thin native SiO2/a-Si:H interfaces and their comparison with those prepared by both dielectric barrier discharge oxidation at atmospheric pressure and by chemical oxidation

M. Kral, A. Bucek, H. Gleskova, M. Cernak, H. Kobayashi, J. Rusnak, M. Zahoran, R. Brunner, E. Pincik

Research output: Contribution to journalArticle

Abstract

The contribution deals with electronic properties of thin oxide/amorphous hydrogenated silicon (a-Si:H) measured by capacitance-voltage (C-V) and charge version of deep level transient spectroscopy (Q-DLTS). The interest was focused on the studies of the interface properties of very thin dielectrics formed by dielectric barrier discharge (DBD) or natively on the a-Si:H layer. These properties were compared with those of oxide layers prepared by chemical oxidation in HNO3. The DBD was used for the preparation of a very thin SiO2 layer on a-Si:H for the first time to our knowledge. Preliminary electrical measurements confirmed that a very low interface states density was detected in the case of the native oxide/a-Si:H and DBD oxide/a-Si:H.
LanguageEnglish
Pages373-378
Number of pages6
JournalActa Physica Slovaca
Volume55
Issue number4
Publication statusPublished - 2005

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atmospheric pressure
oxidation
oxides
electronics
electrical measurement
amorphous silicon
capacitance
preparation
electric potential
spectroscopy

Keywords

  • oxide
  • dielectric barrier discharge

Cite this

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title = "Electronic properties of very thin native SiO2/a-Si:H interfaces and their comparison with those prepared by both dielectric barrier discharge oxidation at atmospheric pressure and by chemical oxidation",
abstract = "The contribution deals with electronic properties of thin oxide/amorphous hydrogenated silicon (a-Si:H) measured by capacitance-voltage (C-V) and charge version of deep level transient spectroscopy (Q-DLTS). The interest was focused on the studies of the interface properties of very thin dielectrics formed by dielectric barrier discharge (DBD) or natively on the a-Si:H layer. These properties were compared with those of oxide layers prepared by chemical oxidation in HNO3. The DBD was used for the preparation of a very thin SiO2 layer on a-Si:H for the first time to our knowledge. Preliminary electrical measurements confirmed that a very low interface states density was detected in the case of the native oxide/a-Si:H and DBD oxide/a-Si:H.",
keywords = "oxide , dielectric barrier discharge",
author = "M. Kral and A. Bucek and H. Gleskova and M. Cernak and H. Kobayashi and J. Rusnak and M. Zahoran and R. Brunner and E. Pincik",
year = "2005",
language = "English",
volume = "55",
pages = "373--378",
journal = "Acta Physica Slovaca",
issn = "0323-0465",
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}

Electronic properties of very thin native SiO2/a-Si:H interfaces and their comparison with those prepared by both dielectric barrier discharge oxidation at atmospheric pressure and by chemical oxidation. / Kral, M. ; Bucek, A.; Gleskova, H.; Cernak, M. ; Kobayashi, H.; Rusnak, J. ; Zahoran, M. ; Brunner, R. ; Pincik, E. .

In: Acta Physica Slovaca , Vol. 55, No. 4, 2005, p. 373-378.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electronic properties of very thin native SiO2/a-Si:H interfaces and their comparison with those prepared by both dielectric barrier discharge oxidation at atmospheric pressure and by chemical oxidation

AU - Kral, M.

AU - Bucek, A.

AU - Gleskova, H.

AU - Cernak, M.

AU - Kobayashi, H.

AU - Rusnak, J.

AU - Zahoran, M.

AU - Brunner, R.

AU - Pincik, E.

PY - 2005

Y1 - 2005

N2 - The contribution deals with electronic properties of thin oxide/amorphous hydrogenated silicon (a-Si:H) measured by capacitance-voltage (C-V) and charge version of deep level transient spectroscopy (Q-DLTS). The interest was focused on the studies of the interface properties of very thin dielectrics formed by dielectric barrier discharge (DBD) or natively on the a-Si:H layer. These properties were compared with those of oxide layers prepared by chemical oxidation in HNO3. The DBD was used for the preparation of a very thin SiO2 layer on a-Si:H for the first time to our knowledge. Preliminary electrical measurements confirmed that a very low interface states density was detected in the case of the native oxide/a-Si:H and DBD oxide/a-Si:H.

AB - The contribution deals with electronic properties of thin oxide/amorphous hydrogenated silicon (a-Si:H) measured by capacitance-voltage (C-V) and charge version of deep level transient spectroscopy (Q-DLTS). The interest was focused on the studies of the interface properties of very thin dielectrics formed by dielectric barrier discharge (DBD) or natively on the a-Si:H layer. These properties were compared with those of oxide layers prepared by chemical oxidation in HNO3. The DBD was used for the preparation of a very thin SiO2 layer on a-Si:H for the first time to our knowledge. Preliminary electrical measurements confirmed that a very low interface states density was detected in the case of the native oxide/a-Si:H and DBD oxide/a-Si:H.

KW - oxide

KW - dielectric barrier discharge

M3 - Article

VL - 55

SP - 373

EP - 378

JO - Acta Physica Slovaca

T2 - Acta Physica Slovaca

JF - Acta Physica Slovaca

SN - 0323-0465

IS - 4

ER -