The contribution deals with electronic properties of thin oxide/amorphous hydrogenated silicon (a-Si:H) measured by capacitance-voltage (C-V) and charge version of deep level transient spectroscopy (Q-DLTS). The interest was focused on the studies of the interface properties of very thin dielectrics formed by dielectric barrier discharge (DBD) or natively on the a-Si:H layer. These properties were compared with those of oxide layers prepared by chemical oxidation in HNO3. The DBD was used for the preparation of a very thin SiO2 layer on a-Si:H for the first time to our knowledge. Preliminary electrical measurements confirmed that a very low interface states density was detected in the case of the native oxide/a-Si:H and DBD oxide/a-Si:H.
|Number of pages||6|
|Journal||Acta Physica Slovaca|
|Publication status||Published - 2005|
- dielectric barrier discharge
Kral, M., Bucek, A., Gleskova, H., Cernak, M., Kobayashi, H., Rusnak, J., Zahoran, M., Brunner, R., & Pincik, E. (2005). Electronic properties of very thin native SiO2/a-Si:H interfaces and their comparison with those prepared by both dielectric barrier discharge oxidation at atmospheric pressure and by chemical oxidation. Acta Physica Slovaca , 55(4), 373-378.