Electron temperature in electrically isolated Si double quantum dots

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Abstract

Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. © 2012 American Institute of Physics.

Original languageEnglish
Article number133503
Number of pages3
JournalApplied Physics Letters
Volume100
Issue number13
DOIs
Publication statusPublished - 26 Mar 2012

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Keywords

  • quantum dots
  • semiconductor quantum dots
  • spin blockade

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