Electron temperature in electrically isolated Si double quantum dots

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. © 2012 American Institute of Physics.

LanguageEnglish
Article number133503
Number of pages3
JournalApplied Physics Letters
Volume100
Issue number13
DOIs
Publication statusPublished - 26 Mar 2012

Fingerprint

quantum dots
electron energy
quantum computation
detectors
electron tunneling
phosphorus
platforms
time measurement
statistics
temperature
silicon
electrons

Keywords

  • quantum dots
  • semiconductor quantum dots
  • spin blockade

Cite this

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abstract = "Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. {\circledC} 2012 American Institute of Physics.",
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Electron temperature in electrically isolated Si double quantum dots. / Rossi, A.; Ferrus, T.; Williams, D. A.

In: Applied Physics Letters, Vol. 100, No. 13, 133503, 26.03.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electron temperature in electrically isolated Si double quantum dots

AU - Rossi, A.

AU - Ferrus, T.

AU - Williams, D. A.

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DO - 10.1063/1.3697832

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