Electron temperature in electrically isolated Si double quantum dots

A. Rossi; T. Ferrus; D. A. Williams

doi:10.1063/1.3697832

Electron temperature in electrically isolated Si double quantum dots

A. Rossi^*, T. Ferrus, D. A. Williams

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. © 2012 American Institute of Physics.

Original language	English
Article number	133503
Number of pages	3
Journal	Applied Physics Letters
Volume	100
Issue number	13
DOIs	https://doi.org/10.1063/1.3697832
Publication status	Published - 26 Mar 2012

Keywords

quantum dots
semiconductor quantum dots
spin blockade

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title = "Electron temperature in electrically isolated Si double quantum dots",

abstract = "Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. {\textcopyright} 2012 American Institute of Physics.",

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AU - Rossi, A.

AU - Ferrus, T.

AU - Williams, D. A.

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N2 - Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. © 2012 American Institute of Physics.

AB - Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically isolated double quantum dots (DQDs) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. © 2012 American Institute of Physics.

KW - quantum dots

KW - semiconductor quantum dots

KW - spin blockade

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DO - 10.1063/1.3697832

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 133503

ER -

Electron temperature in electrically isolated Si double quantum dots

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Keywords

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