Electron probe microanalysis of rare earth doped gallium nitride light emitters

S Dalmasso, R W Martin, P R Edwards, K P O'Donnell, B Pipeleers, A Vantomme, Y Nakanishi, A Wakahara, A Yoshida, RENiBEI Network

Research output: Contribution to journalArticle

Abstract

Rare earth doped GaN structures offer potential for optical devices emitting in the visible spectral region. Doping with europium and erbium produces characteristic sharp red and green emission lines respectively, due to intra-4f(n) shell electron transitions. We describe studies of Eu- and Er- ion implanted MOCVD grown GaN epilayers on sapphire using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Wavelength dispersive X-ray analysis is shown to be an accurate technique for quantifying rare earth concentrations in GaN, down to similar to0.06 atomic % and is complemented by CL acquired at the same time from the same microscopic region of sample.

LanguageEnglish
Pages555-558
Number of pages4
JournalJournal of Physics: Conference Series
Volume180
Publication statusPublished - 2003

Fingerprint

gallium nitrides
electron probes
cathodoluminescence
microanalysis
emitters
rare earth elements
electron transitions
europium
erbium
metalorganic chemical vapor deposition
sapphire
wavelengths
spectroscopy
ions
x rays

Keywords

  • Gan
  • photoluminescence
  • luminescence
  • ER
  • EU

Cite this

Dalmasso, S ; Martin, R W ; Edwards, P R ; O'Donnell, K P ; Pipeleers, B ; Vantomme, A ; Nakanishi, Y ; Wakahara, A ; Yoshida, A ; RENiBEI Network. / Electron probe microanalysis of rare earth doped gallium nitride light emitters. In: Journal of Physics: Conference Series. 2003 ; Vol. 180. pp. 555-558.
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abstract = "Rare earth doped GaN structures offer potential for optical devices emitting in the visible spectral region. Doping with europium and erbium produces characteristic sharp red and green emission lines respectively, due to intra-4f(n) shell electron transitions. We describe studies of Eu- and Er- ion implanted MOCVD grown GaN epilayers on sapphire using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Wavelength dispersive X-ray analysis is shown to be an accurate technique for quantifying rare earth concentrations in GaN, down to similar to0.06 atomic {\%} and is complemented by CL acquired at the same time from the same microscopic region of sample.",
keywords = "Gan, photoluminescence, luminescence, ER, EU",
author = "S Dalmasso and Martin, {R W} and Edwards, {P R} and O'Donnell, {K P} and B Pipeleers and A Vantomme and Y Nakanishi and A Wakahara and A Yoshida and {RENiBEI Network}",
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language = "English",
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Dalmasso, S, Martin, RW, Edwards, PR, O'Donnell, KP, Pipeleers, B, Vantomme, A, Nakanishi, Y, Wakahara, A, Yoshida, A & RENiBEI Network 2003, 'Electron probe microanalysis of rare earth doped gallium nitride light emitters' Journal of Physics: Conference Series, vol. 180, pp. 555-558.

Electron probe microanalysis of rare earth doped gallium nitride light emitters. / Dalmasso, S ; Martin, R W ; Edwards, P R ; O'Donnell, K P ; Pipeleers, B ; Vantomme, A ; Nakanishi, Y ; Wakahara, A ; Yoshida, A ; RENiBEI Network.

In: Journal of Physics: Conference Series, Vol. 180, 2003, p. 555-558.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electron probe microanalysis of rare earth doped gallium nitride light emitters

AU - Dalmasso, S

AU - Martin, R W

AU - Edwards, P R

AU - O'Donnell, K P

AU - Pipeleers, B

AU - Vantomme, A

AU - Nakanishi, Y

AU - Wakahara, A

AU - Yoshida, A

AU - RENiBEI Network

PY - 2003

Y1 - 2003

N2 - Rare earth doped GaN structures offer potential for optical devices emitting in the visible spectral region. Doping with europium and erbium produces characteristic sharp red and green emission lines respectively, due to intra-4f(n) shell electron transitions. We describe studies of Eu- and Er- ion implanted MOCVD grown GaN epilayers on sapphire using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Wavelength dispersive X-ray analysis is shown to be an accurate technique for quantifying rare earth concentrations in GaN, down to similar to0.06 atomic % and is complemented by CL acquired at the same time from the same microscopic region of sample.

AB - Rare earth doped GaN structures offer potential for optical devices emitting in the visible spectral region. Doping with europium and erbium produces characteristic sharp red and green emission lines respectively, due to intra-4f(n) shell electron transitions. We describe studies of Eu- and Er- ion implanted MOCVD grown GaN epilayers on sapphire using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Wavelength dispersive X-ray analysis is shown to be an accurate technique for quantifying rare earth concentrations in GaN, down to similar to0.06 atomic % and is complemented by CL acquired at the same time from the same microscopic region of sample.

KW - Gan

KW - photoluminescence

KW - luminescence

KW - ER

KW - EU

M3 - Article

VL - 180

SP - 555

EP - 558

JO - Journal of Physics: Conference Series

T2 - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

ER -