Electron mobility in amorphous silicon thin-film transistors under compressive strain

H. Gleskova, S. Wagner

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Abstract

We evaluated amorphous silicon thin-film transistors under uniaxial compressive strain of up to 1%. The on-current and hence the electron linear mobility decrease. The off-current, leakage current, and the threshold voltage do not change. The mobility decreases linearly with applied compressive strain. Upon the application of stress for up to 40 h the mobility drops "instantly" and then remains unchanged. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility.

Original languageEnglish
Pages (from-to)3347-3349
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number20
DOIs
Publication statusPublished - 12 Nov 2001

Keywords

  • electron mobility
  • thin-film transistors
  • compressive strain

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