Electron mobility in amorphous silicon thin-film transistors under compressive strain

H. Gleskova, S. Wagner

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

We evaluated amorphous silicon thin-film transistors under uniaxial compressive strain of up to 1%. The on-current and hence the electron linear mobility decrease. The off-current, leakage current, and the threshold voltage do not change. The mobility decreases linearly with applied compressive strain. Upon the application of stress for up to 40 h the mobility drops "instantly" and then remains unchanged. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility.

Original languageEnglish
Pages (from-to)3347-3349
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number20
DOIs
Publication statusPublished - 12 Nov 2001

Fingerprint

electron mobility
amorphous silicon
transistors
thin films
threshold voltage
conduction bands
leakage
valence
electrons

Keywords

  • electron mobility
  • thin-film transistors
  • compressive strain

Cite this

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Electron mobility in amorphous silicon thin-film transistors under compressive strain. / Gleskova, H.; Wagner, S.

In: Applied Physics Letters, Vol. 79, No. 20, 12.11.2001, p. 3347-3349.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Gleskova, H.

AU - Wagner, S.

PY - 2001/11/12

Y1 - 2001/11/12

N2 - We evaluated amorphous silicon thin-film transistors under uniaxial compressive strain of up to 1%. The on-current and hence the electron linear mobility decrease. The off-current, leakage current, and the threshold voltage do not change. The mobility decreases linearly with applied compressive strain. Upon the application of stress for up to 40 h the mobility drops "instantly" and then remains unchanged. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility.

AB - We evaluated amorphous silicon thin-film transistors under uniaxial compressive strain of up to 1%. The on-current and hence the electron linear mobility decrease. The off-current, leakage current, and the threshold voltage do not change. The mobility decreases linearly with applied compressive strain. Upon the application of stress for up to 40 h the mobility drops "instantly" and then remains unchanged. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility.

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KW - thin-film transistors

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U2 - 10.1063/1.1418254

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M3 - Article

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