Electron microprobe and photoluminescence analysis of europium-doped gallium nitride light emitters

R. W. Martin, S. Dalmasso, K. P. O'Donnell, Y. Nakanishi, A. Wakahara, A. Yoshida

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Rare-earth doped GaN structures offer potential for optical devices emitting in the visible region [1,2]. We describe a study of MOVPE grown GaN-on-sapphire epilayers implanted with Europium ions, producing characteristic red emission lines between 540 and 680 nm due to intra-4f(n) electron transitions. As-implanted and subsequently annealed samples are investigated using a combination of wavelength dispersive x-ray analysis (WDX), electron microscopy, cathodoluminescence (CL) and photoluminescence (PL). WDX is shown to be a powerful technique for quantifying rare-earth concentrations in GaN, with varying electron beam voltages allowing a degree of depth profiling, further enhanced by the simultaneous collection of room temperature luminescence (CL) from the analysed region [3]. The intensities of the sharp lines observed in the luminescence spectrum are compared to the doping density (between 1014-1015 cm-2) and the Eu content measured by WDX, using a Eu-doped glass standard. Differences observed in the luminescence spectra produced by laser and electron beam excitation will be discussed along with the importance of the annealing conditions, which "heal" defects visible in the electron micrographs.

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Europium
Gallium nitride
x ray analysis
gallium nitrides
europium
Luminescence
Photoluminescence
emitters
Cathodoluminescence
luminescence
cathodoluminescence
photoluminescence
X rays
Wavelength
Rare earths
Electrons
Electron beams
rare earth elements
wavelengths
electron beams

Keywords

  • Gallium nitride
  • annealing
  • cathodoluminescence
  • electron beams
  • electron microscopy
  • electron transitions
  • Europium
  • laser beams
  • metallorganic vapor phase epitaxy
  • optical devices
  • photoluminescence
  • semiconductor doping
  • x ray diffraction analysis

Cite this

@article{516a5c3855dc428a86171b9d4cf5f863,
title = "Electron microprobe and photoluminescence analysis of europium-doped gallium nitride light emitters",
abstract = "Rare-earth doped GaN structures offer potential for optical devices emitting in the visible region [1,2]. We describe a study of MOVPE grown GaN-on-sapphire epilayers implanted with Europium ions, producing characteristic red emission lines between 540 and 680 nm due to intra-4f(n) electron transitions. As-implanted and subsequently annealed samples are investigated using a combination of wavelength dispersive x-ray analysis (WDX), electron microscopy, cathodoluminescence (CL) and photoluminescence (PL). WDX is shown to be a powerful technique for quantifying rare-earth concentrations in GaN, with varying electron beam voltages allowing a degree of depth profiling, further enhanced by the simultaneous collection of room temperature luminescence (CL) from the analysed region [3]. The intensities of the sharp lines observed in the luminescence spectrum are compared to the doping density (between 1014-1015 cm-2) and the Eu content measured by WDX, using a Eu-doped glass standard. Differences observed in the luminescence spectra produced by laser and electron beam excitation will be discussed along with the importance of the annealing conditions, which {"}heal{"} defects visible in the electron micrographs.",
keywords = "Gallium nitride, annealing, cathodoluminescence, electron beams, electron microscopy, electron transitions, Europium, laser beams, metallorganic vapor phase epitaxy, optical devices, photoluminescence, semiconductor doping, x ray diffraction analysis",
author = "Martin, {R. W.} and S. Dalmasso and O'Donnell, {K. P.} and Y. Nakanishi and A. Wakahara and A. Yoshida",
year = "2002",
month = "12",
day = "1",
doi = "10.1557/PROC-743-L6.15",
language = "English",
volume = "743",
pages = "411--416",
journal = "MRS Online Proceedings Library",
issn = "1946-4274",

}

Electron microprobe and photoluminescence analysis of europium-doped gallium nitride light emitters. / Martin, R. W.; Dalmasso, S.; O'Donnell, K. P.; Nakanishi, Y.; Wakahara, A.; Yoshida, A.

In: Materials Research Society Symposium - Proceedings, Vol. 743, 01.12.2002, p. 411-416.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Electron microprobe and photoluminescence analysis of europium-doped gallium nitride light emitters

AU - Martin, R. W.

AU - Dalmasso, S.

AU - O'Donnell, K. P.

AU - Nakanishi, Y.

AU - Wakahara, A.

AU - Yoshida, A.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Rare-earth doped GaN structures offer potential for optical devices emitting in the visible region [1,2]. We describe a study of MOVPE grown GaN-on-sapphire epilayers implanted with Europium ions, producing characteristic red emission lines between 540 and 680 nm due to intra-4f(n) electron transitions. As-implanted and subsequently annealed samples are investigated using a combination of wavelength dispersive x-ray analysis (WDX), electron microscopy, cathodoluminescence (CL) and photoluminescence (PL). WDX is shown to be a powerful technique for quantifying rare-earth concentrations in GaN, with varying electron beam voltages allowing a degree of depth profiling, further enhanced by the simultaneous collection of room temperature luminescence (CL) from the analysed region [3]. The intensities of the sharp lines observed in the luminescence spectrum are compared to the doping density (between 1014-1015 cm-2) and the Eu content measured by WDX, using a Eu-doped glass standard. Differences observed in the luminescence spectra produced by laser and electron beam excitation will be discussed along with the importance of the annealing conditions, which "heal" defects visible in the electron micrographs.

AB - Rare-earth doped GaN structures offer potential for optical devices emitting in the visible region [1,2]. We describe a study of MOVPE grown GaN-on-sapphire epilayers implanted with Europium ions, producing characteristic red emission lines between 540 and 680 nm due to intra-4f(n) electron transitions. As-implanted and subsequently annealed samples are investigated using a combination of wavelength dispersive x-ray analysis (WDX), electron microscopy, cathodoluminescence (CL) and photoluminescence (PL). WDX is shown to be a powerful technique for quantifying rare-earth concentrations in GaN, with varying electron beam voltages allowing a degree of depth profiling, further enhanced by the simultaneous collection of room temperature luminescence (CL) from the analysed region [3]. The intensities of the sharp lines observed in the luminescence spectrum are compared to the doping density (between 1014-1015 cm-2) and the Eu content measured by WDX, using a Eu-doped glass standard. Differences observed in the luminescence spectra produced by laser and electron beam excitation will be discussed along with the importance of the annealing conditions, which "heal" defects visible in the electron micrographs.

KW - Gallium nitride

KW - annealing

KW - cathodoluminescence

KW - electron beams

KW - electron microscopy

KW - electron transitions

KW - Europium

KW - laser beams

KW - metallorganic vapor phase epitaxy

KW - optical devices

KW - photoluminescence

KW - semiconductor doping

KW - x ray diffraction analysis

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DO - 10.1557/PROC-743-L6.15

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EP - 416

JO - MRS Online Proceedings Library

T2 - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 1946-4274

ER -