Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth - Implanted GaN

S. Dalmasso, R. W. Martin, P. R. Edwards, V. Katchkanov, K. P. O'Donnell, K. Lorenz, E. Alves, U. Wahl, B. Pipeleers, V. Matias, A. Vantomme, Y. Nakanishi, A. Wakahara, A. Yoshida

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

GaN films doped with rare earth (RE) elements have attracted considerable attention due to the unique optical luminescent properties of the RE intra 4f(n)-shell electron transitions which lead to sharp blue (Tm), green (Er) and red (Eu) emissions. This paper presents an overview of investigations of GaN films implanted with each of these ions using a combination of electronbeam and optical techniques. The ion implantations were performed under a wide range of conditions, covering variations in fluences, energies and temperatures and followed by different high-temperature annealing steps. The resulting RE:GaN films were analysed using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Elemental microanalysis data obtained by wavelength dispersive X-ray analysis (WDX) is correlated with simultaneously collected room temperature CL spectra. WDX allows the quantification of the RE elemental concentrations in GaN down to ∼ 0.03 at. % in very thin layers (∼ 100 nm deep). Furthermore, by varying the incident electron beam energy, details concerning the depth profile of RE implants can be determined. The effects of both implantation conditions and rapid thermal annealing on the depth profile and on the luminescence properties are reported. CL measurements performed on annealed samples reveal sharp visible and near IR emission lines characteristic of the RE3+ intra-4f(n) atomic shell transitions.

LanguageEnglish
Pages429-434
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume798
Publication statusPublished - 1 Dec 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: 1 Dec 20035 Dec 2003

Fingerprint

Cathodoluminescence
Electron probe microanalysis
cathodoluminescence
Rare earths
rare earth elements
Spectroscopy
probes
X ray analysis
spectroscopy
electrons
Wavelength
Rapid thermal annealing
Microanalysis
Electron transitions
Rare earth elements
annealing
Ion implantation
Temperature
electron transitions
Luminescence

Keywords

  • Gallium nitride
  • annealing
  • cathodoluminescence
  • electron beams
  • electron transitions
  • ion implantation
  • light emission
  • photons
  • rare earth elements
  • semiconductor doping
  • thermodynamic stability
  • thin films
  • x ray analysis

Cite this

Dalmasso, S. ; Martin, R. W. ; Edwards, P. R. ; Katchkanov, V. ; O'Donnell, K. P. ; Lorenz, K. ; Alves, E. ; Wahl, U. ; Pipeleers, B. ; Matias, V. ; Vantomme, A. ; Nakanishi, Y. ; Wakahara, A. ; Yoshida, A. / Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth - Implanted GaN. In: Materials Research Society Symposium - Proceedings. 2003 ; Vol. 798. pp. 429-434.
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abstract = "GaN films doped with rare earth (RE) elements have attracted considerable attention due to the unique optical luminescent properties of the RE intra 4f(n)-shell electron transitions which lead to sharp blue (Tm), green (Er) and red (Eu) emissions. This paper presents an overview of investigations of GaN films implanted with each of these ions using a combination of electronbeam and optical techniques. The ion implantations were performed under a wide range of conditions, covering variations in fluences, energies and temperatures and followed by different high-temperature annealing steps. The resulting RE:GaN films were analysed using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Elemental microanalysis data obtained by wavelength dispersive X-ray analysis (WDX) is correlated with simultaneously collected room temperature CL spectra. WDX allows the quantification of the RE elemental concentrations in GaN down to ∼ 0.03 at. {\%} in very thin layers (∼ 100 nm deep). Furthermore, by varying the incident electron beam energy, details concerning the depth profile of RE implants can be determined. The effects of both implantation conditions and rapid thermal annealing on the depth profile and on the luminescence properties are reported. CL measurements performed on annealed samples reveal sharp visible and near IR emission lines characteristic of the RE3+ intra-4f(n) atomic shell transitions.",
keywords = "Gallium nitride, annealing, cathodoluminescence, electron beams, electron transitions, ion implantation, light emission, photons, rare earth elements, semiconductor doping, thermodynamic stability, thin films, x ray analysis",
author = "S. Dalmasso and Martin, {R. W.} and Edwards, {P. R.} and V. Katchkanov and O'Donnell, {K. P.} and K. Lorenz and E. Alves and U. Wahl and B. Pipeleers and V. Matias and A. Vantomme and Y. Nakanishi and A. Wakahara and A. Yoshida",
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Dalmasso, S, Martin, RW, Edwards, PR, Katchkanov, V, O'Donnell, KP, Lorenz, K, Alves, E, Wahl, U, Pipeleers, B, Matias, V, Vantomme, A, Nakanishi, Y, Wakahara, A & Yoshida, A 2003, 'Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth - Implanted GaN' Materials Research Society Symposium - Proceedings, vol. 798, pp. 429-434.

Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth - Implanted GaN. / Dalmasso, S.; Martin, R. W.; Edwards, P. R.; Katchkanov, V.; O'Donnell, K. P.; Lorenz, K.; Alves, E.; Wahl, U.; Pipeleers, B.; Matias, V.; Vantomme, A.; Nakanishi, Y.; Wakahara, A.; Yoshida, A.

In: Materials Research Society Symposium - Proceedings, Vol. 798, 01.12.2003, p. 429-434.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth - Implanted GaN

AU - Dalmasso, S.

AU - Martin, R. W.

AU - Edwards, P. R.

AU - Katchkanov, V.

AU - O'Donnell, K. P.

AU - Lorenz, K.

AU - Alves, E.

AU - Wahl, U.

AU - Pipeleers, B.

AU - Matias, V.

AU - Vantomme, A.

AU - Nakanishi, Y.

AU - Wakahara, A.

AU - Yoshida, A.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - GaN films doped with rare earth (RE) elements have attracted considerable attention due to the unique optical luminescent properties of the RE intra 4f(n)-shell electron transitions which lead to sharp blue (Tm), green (Er) and red (Eu) emissions. This paper presents an overview of investigations of GaN films implanted with each of these ions using a combination of electronbeam and optical techniques. The ion implantations were performed under a wide range of conditions, covering variations in fluences, energies and temperatures and followed by different high-temperature annealing steps. The resulting RE:GaN films were analysed using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Elemental microanalysis data obtained by wavelength dispersive X-ray analysis (WDX) is correlated with simultaneously collected room temperature CL spectra. WDX allows the quantification of the RE elemental concentrations in GaN down to ∼ 0.03 at. % in very thin layers (∼ 100 nm deep). Furthermore, by varying the incident electron beam energy, details concerning the depth profile of RE implants can be determined. The effects of both implantation conditions and rapid thermal annealing on the depth profile and on the luminescence properties are reported. CL measurements performed on annealed samples reveal sharp visible and near IR emission lines characteristic of the RE3+ intra-4f(n) atomic shell transitions.

AB - GaN films doped with rare earth (RE) elements have attracted considerable attention due to the unique optical luminescent properties of the RE intra 4f(n)-shell electron transitions which lead to sharp blue (Tm), green (Er) and red (Eu) emissions. This paper presents an overview of investigations of GaN films implanted with each of these ions using a combination of electronbeam and optical techniques. The ion implantations were performed under a wide range of conditions, covering variations in fluences, energies and temperatures and followed by different high-temperature annealing steps. The resulting RE:GaN films were analysed using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Elemental microanalysis data obtained by wavelength dispersive X-ray analysis (WDX) is correlated with simultaneously collected room temperature CL spectra. WDX allows the quantification of the RE elemental concentrations in GaN down to ∼ 0.03 at. % in very thin layers (∼ 100 nm deep). Furthermore, by varying the incident electron beam energy, details concerning the depth profile of RE implants can be determined. The effects of both implantation conditions and rapid thermal annealing on the depth profile and on the luminescence properties are reported. CL measurements performed on annealed samples reveal sharp visible and near IR emission lines characteristic of the RE3+ intra-4f(n) atomic shell transitions.

KW - Gallium nitride

KW - annealing

KW - cathodoluminescence

KW - electron beams

KW - electron transitions

KW - ion implantation

KW - light emission

KW - photons

KW - rare earth elements

KW - semiconductor doping

KW - thermodynamic stability

KW - thin films

KW - x ray analysis

UR - http://www.scopus.com/inward/record.url?scp=2942737109&partnerID=8YFLogxK

M3 - Conference article

VL - 798

SP - 429

EP - 434

JO - MRS Online Proceedings Library

T2 - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 1946-4274

ER -