Electron counting in a silicon single-electron pump

Tuomo Tanttu, Alessandro Rossi, Kuan Yen Tan, Kukka Emilia Huhtinen, Kok Wai Chan, Mikko Möttönen, Andrew S. Dzurak

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Abstract

We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million. Single-shot detection of electrons pumped into a reservoir dot is performed using a capacitively coupled single-electron transistor. We extract the full probability distribution of the transfer of n electrons per pumping cycle for We find that the probabilities extracted from the counting experiment are in agreement with direct current measurements in a broad range of dc electrochemical potentials of the pump. The electron counting technique is also used to confirm the improving robustness of the pumping mechanism with increasing electrostatic confinement of the quantum dot.

Original languageEnglish
Article number103030
Number of pages7
JournalNew Journal of Physics
Volume17
Issue number10
DOIs
Publication statusPublished - 16 Oct 2015

Keywords

  • charge pumping
  • electron counting
  • quantum dots
  • single-electron pump

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    Tanttu, T., Rossi, A., Tan, K. Y., Huhtinen, K. E., Chan, K. W., Möttönen, M., & Dzurak, A. S. (2015). Electron counting in a silicon single-electron pump. New Journal of Physics, 17(10), [103030]. https://doi.org/10.1088/1367-2630/17/10/103030