Electron channelling contrast imaging for III-nitride thin film structures

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6 Citations (Scopus)

Abstract

Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI; especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed.
LanguageEnglish
Pages44-50
Number of pages7
JournalMaterials Science in Semiconductor Processing
Volume47
Early online date27 Feb 2016
DOIs
Publication statusPublished - 1 Jun 2016

Fingerprint

Nitrides
nitrides
Imaging techniques
Thin films
Electrons
thin films
electrons
electron microscopes
Electron microscopes
scanning
Scanning
cathodoluminescence
Cathodoluminescence
Crystal orientation
histories
Semiconductor materials
Crystalline materials
defects
Defects
Substrates

Keywords

  • III - nitrides
  • extended defects
  • thin films

Cite this

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title = "Electron channelling contrast imaging for III-nitride thin film structures",
abstract = "Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI; especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed.",
keywords = "III - nitrides, extended defects, thin films",
author = "G. Naresh-Kumar and D. Thomson and M. Nouf-Allehiani and J. Bruckbauer and Edwards, {P. R.} and B. Hourahine and R.W. Martin and C. Trager-Cowan",
year = "2016",
month = "6",
day = "1",
doi = "10.1016/j.mssp.2016.02.007",
language = "English",
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journal = "Materials Science in Semiconductor Processing",
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TY - JOUR

T1 - Electron channelling contrast imaging for III-nitride thin film structures

AU - Naresh-Kumar, G.

AU - Thomson, D.

AU - Nouf-Allehiani, M.

AU - Bruckbauer, J.

AU - Edwards, P. R.

AU - Hourahine, B.

AU - Martin, R.W.

AU - Trager-Cowan, C.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI; especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed.

AB - Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI; especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed.

KW - III - nitrides

KW - extended defects

KW - thin films

UR - http://www.sciencedirect.com/science/journal/13698001

U2 - 10.1016/j.mssp.2016.02.007

DO - 10.1016/j.mssp.2016.02.007

M3 - Article

VL - 47

SP - 44

EP - 50

JO - Materials Science in Semiconductor Processing

T2 - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -