Electron channelling contrast imaging for III-nitride thin film structures

G. Naresh-Kumar; D. Thomson; M. Nouf-Allehiani; J. Bruckbauer; P. R. Edwards; B. Hourahine; R.W. Martin; C. Trager-Cowan

doi:10.1016/j.mssp.2016.02.007

Electron channelling contrast imaging for III-nitride thin film structures

G. Naresh-Kumar, D. Thomson, M. Nouf-Allehiani, J. Bruckbauer, P. R. Edwards, B. Hourahine, R.W. Martin, C. Trager-Cowan

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

136 Downloads (Pure)

Abstract

Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI; especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed.

Original language	English
Pages (from-to)	44-50
Number of pages	7
Journal	Materials Science in Semiconductor Processing
Volume	47
Early online date	27 Feb 2016
DOIs	https://doi.org/10.1016/j.mssp.2016.02.007
Publication status	Published - 1 Jun 2016

Keywords

III - nitrides
extended defects
thin films

Access to Document

10.1016/j.mssp.2016.02.007Licence: CC BY 4.0

Naresh-Kumar-etal-2016-MSSP-Electron-channelling-contrast-imaging-for-III-nitrideFinal published version, 1.17 MBLicence: CC BY 4.0

Cite this

@article{19cf0cfb9e034776b9d2b5fa258f878b,

title = "Electron channelling contrast imaging for III-nitride thin film structures",

abstract = "Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI; especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed.",

keywords = "III - nitrides, extended defects, thin films",

author = "G. Naresh-Kumar and D. Thomson and M. Nouf-Allehiani and J. Bruckbauer and Edwards, {P. R.} and B. Hourahine and R.W. Martin and C. Trager-Cowan",

year = "2016",

month = jun,

day = "1",

doi = "10.1016/j.mssp.2016.02.007",

language = "English",

volume = "47",

pages = "44--50",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}

TY - JOUR

T1 - Electron channelling contrast imaging for III-nitride thin film structures

AU - Naresh-Kumar, G.

AU - Thomson, D.

AU - Nouf-Allehiani, M.

AU - Bruckbauer, J.

AU - Edwards, P. R.

AU - Hourahine, B.

AU - Martin, R.W.

AU - Trager-Cowan, C.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI; especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed.

AB - Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI; especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed.

KW - III - nitrides

KW - extended defects

KW - thin films

UR - http://www.sciencedirect.com/science/journal/13698001

U2 - 10.1016/j.mssp.2016.02.007

DO - 10.1016/j.mssp.2016.02.007

M3 - Article

SN - 1369-8001

VL - 47

SP - 44

EP - 50

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Electron channelling contrast imaging for III-nitride thin film structures

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Manufacturing of nano-engineered III-nitride semiconductors

Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.

Electron channelling contrast and cathodoluminescence images obtained from III-nitride layer structures

ESEM Quanta 250

SEM SIRION 200

Cite this

Electron channelling contrast imaging for III-nitride thin film structures

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Projects

Manufacturing of nano-engineered III-nitride semiconductors

Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.

Datasets

Electron channelling contrast and cathodoluminescence images obtained from III-nitride layer structures

Equipment

ESEM Quanta 250

SEM SIRION 200

Cite this