Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

G. Naresh Kumar, C Mauder, K.R. Wang, Simon Kraeusel, Jochen Bruckbauer, P. R. Edwards, Benjamin Hourahine, H. Kalisch, A. Vescan, C. Giesen, M Heuken, A. Trampert, A.P. Day, Carol Trager-Cowan

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on γ-LiAlO2 by metal organic vapor phase epitaxy.
LanguageEnglish
Article number142103
Number of pages4
JournalApplied Physics Letters
Volume102
Issue number14
DOIs
Publication statusPublished - 8 Apr 2013

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crystal defects
nitrides
electron microscopes
scanning
electrons
vapor phase epitaxy
electrical properties
quantum wells
optical properties
thin films
metals

Keywords

  • channelling
  • gallium compounds
  • indium compounds
  • scanning electron microscopy
  • wide band gap semiconductors
  • non-polar III-nitride semiconductor thin films

Cite this

Naresh Kumar, G. ; Mauder, C ; Wang, K.R. ; Kraeusel, Simon ; Bruckbauer, Jochen ; Edwards, P. R. ; Hourahine, Benjamin ; Kalisch, H. ; Vescan, A. ; Giesen, C. ; Heuken, M ; Trampert, A. ; Day, A.P. ; Trager-Cowan, Carol. / Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope. In: Applied Physics Letters. 2013 ; Vol. 102, No. 14.
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Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope. / Naresh Kumar, G.; Mauder, C; Wang, K.R.; Kraeusel, Simon; Bruckbauer, Jochen; Edwards, P. R.; Hourahine, Benjamin; Kalisch, H.; Vescan, A.; Giesen, C.; Heuken, M; Trampert, A.; Day, A.P.; Trager-Cowan, Carol.

In: Applied Physics Letters, Vol. 102, No. 14, 142103, 08.04.2013.

Research output: Contribution to journalArticle

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T1 - Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

AU - Naresh Kumar, G.

AU - Mauder, C

AU - Wang, K.R.

AU - Kraeusel, Simon

AU - Bruckbauer, Jochen

AU - Edwards, P. R.

AU - Hourahine, Benjamin

AU - Kalisch, H.

AU - Vescan, A.

AU - Giesen, C.

AU - Heuken, M

AU - Trampert, A.

AU - Day, A.P.

AU - Trager-Cowan, Carol

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KW - gallium compounds

KW - indium compounds

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