Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

G. Naresh Kumar; C Mauder; K.R. Wang; Simon Kraeusel; Jochen Bruckbauer; P. R. Edwards; Benjamin Hourahine; H. Kalisch; A. Vescan; C. Giesen; M Heuken; A. Trampert; A.P. Day; Carol Trager-Cowan

doi:10.1063/1.4801469

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

G. Naresh Kumar, C Mauder, K.R. Wang, Simon Kraeusel, Jochen Bruckbauer, P. R. Edwards, Benjamin Hourahine, H. Kalisch, A. Vescan, C. Giesen, M Heuken, A. Trampert, A.P. Day, Carol Trager-Cowan

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Abstract

Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on γ-LiAlO2 by metal organic vapor phase epitaxy.

Original language	English
Article number	142103
Number of pages	4
Journal	Applied Physics Letters
Volume	102
Issue number	14
DOIs	https://doi.org/10.1063/1.4801469
Publication status	Published - 8 Apr 2013

Keywords

channelling
gallium compounds
indium compounds
scanning electron microscopy
wide band gap semiconductors
non-polar III-nitride semiconductor thin films

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10.1063/1.4801469

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscopeFinal published version, 1.03 MB

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Naresh Kumar, G., Mauder, C., Wang, K. R., Kraeusel, S., Bruckbauer, J., Edwards, P. R., Hourahine, B., Kalisch, H., Vescan, A., Giesen, C., Heuken, M., Trampert, A., Day, A. P., & Trager-Cowan, C. (2013). Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope. Applied Physics Letters, 102(14), Article 142103. https://doi.org/10.1063/1.4801469

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title = "Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope",

abstract = "Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on γ-LiAlO2 by metal organic vapor phase epitaxy.",

keywords = "channelling, gallium compounds, indium compounds, scanning electron microscopy, wide band gap semiconductors, non-polar III-nitride semiconductor thin films",

author = "{Naresh Kumar}, G. and C Mauder and K.R. Wang and Simon Kraeusel and Jochen Bruckbauer and Edwards, {P. R.} and Benjamin Hourahine and H. Kalisch and A. Vescan and C. Giesen and M Heuken and A. Trampert and A.P. Day and Carol Trager-Cowan",

year = "2013",

month = apr,

day = "8",

doi = "10.1063/1.4801469",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

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Naresh Kumar, G, Mauder, C, Wang, KR, Kraeusel, S, Bruckbauer, J , Edwards, PR , Hourahine, B, Kalisch, H, Vescan, A, Giesen, C, Heuken, M, Trampert, A, Day, AP & Trager-Cowan, C 2013, 'Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope', Applied Physics Letters, vol. 102, no. 14, 142103. https://doi.org/10.1063/1.4801469

TY - JOUR

T1 - Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

AU - Naresh Kumar, G.

AU - Mauder, C

AU - Wang, K.R.

AU - Kraeusel, Simon

AU - Bruckbauer, Jochen

AU - Edwards, P. R.

AU - Hourahine, Benjamin

AU - Kalisch, H.

AU - Vescan, A.

AU - Giesen, C.

AU - Heuken, M

AU - Trampert, A.

AU - Day, A.P.

AU - Trager-Cowan, Carol

PY - 2013/4/8

Y1 - 2013/4/8

N2 - Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on γ-LiAlO2 by metal organic vapor phase epitaxy.

AB - Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on γ-LiAlO2 by metal organic vapor phase epitaxy.

KW - channelling

KW - gallium compounds

KW - indium compounds

KW - scanning electron microscopy

KW - wide band gap semiconductors

KW - non-polar III-nitride semiconductor thin films

UR - http://www.scopus.com/inward/record.url?scp=84876360422&partnerID=8YFLogxK

U2 - 10.1063/1.4801469

DO - 10.1063/1.4801469

M3 - Article

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142103

ER -

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

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Keywords

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Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.

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Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Abstract

Keywords

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Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.

Cite this