Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

G. Naresh Kumar, C Mauder, K.R. Wang, Simon Kraeusel, Jochen Bruckbauer, P. R. Edwards, Benjamin Hourahine, H. Kalisch, A. Vescan, C. Giesen, M Heuken, A. Trampert, A.P. Day, Carol Trager-Cowan

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Abstract

Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on γ-LiAlO2 by metal organic vapor phase epitaxy.
Original languageEnglish
Article number142103
Number of pages4
JournalApplied Physics Letters
Volume102
Issue number14
DOIs
Publication statusPublished - 8 Apr 2013

Keywords

  • channelling
  • gallium compounds
  • indium compounds
  • scanning electron microscopy
  • wide band gap semiconductors
  • non-polar III-nitride semiconductor thin films

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