Electron channeling contrast imaging of defects in III-nitride semiconductors

C. Trager-Cowan; G. Naresh-Kumar; N. Allehiani; S. Kraeusel; B. Hourahine; S. Vespucci; D. Thomson; J. Bruckbauer; G. Kusch; P. R. Edwards; R. W. Martin; C. Mauder; A. P. Day; A. Winkelmann; A. Vilalta-Clemente; A. J. Wilkinson; P. J. Parbrook; M. J. Kappers; M. A. Moram; R. A. Oliver; C. J. Humphreys; P. Shields; E. D. Le Boulbar; D. Maneuski; V. O'Shea; K. P. Mingard

doi:10.1017/S1431927614006849

Electron channeling contrast imaging of defects in III-nitride semiconductors

C. Trager-Cowan, G. Naresh-Kumar, N. Allehiani, S. Kraeusel, B. Hourahine, S. Vespucci, D. Thomson, J. Bruckbauer, G. Kusch, P. R. Edwards, R. W. Martin, C. Mauder, A. P. Day, A. Winkelmann, A. Vilalta-Clemente, A. J. Wilkinson, P. J. Parbrook, M. J. Kappers, M. A. Moram, R. A. OliverC. J. Humphreys, P. Shields, E. D. Le Boulbar, D. Maneuski, V. O'Shea, K. P. Mingard

Research output: Contribution to journal › Conference Contribution › peer-review

75 Downloads (Pure)

Original language	English
Pages (from-to)	1024-1025
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	20
Issue number	S3
DOIs	https://doi.org/10.1017/S1431927614006849
Publication status	Published - Aug 2014
Event	Microscopy & Microanalysis 2014 - Connecticut, Hartford, United States Duration: 3 Aug 2014 → 7 Aug 2014

Access to Document

10.1017/S1431927614006849

Trager-Cowan-etal-MM2014-electron-channeling-contrast-imagingFinal published version, 1.3 MB

Cite this

Trager-Cowan, C., Naresh-Kumar, G., Allehiani, N., Kraeusel, S., Hourahine, B., Vespucci, S., Thomson, D., Bruckbauer, J., Kusch, G., Edwards, P. R., Martin, R. W., Mauder, C., Day, A. P., Winkelmann, A., Vilalta-Clemente, A., Wilkinson, A. J., Parbrook, P. J., Kappers, M. J., Moram, M. A., ... Mingard, K. P. (2014). Electron channeling contrast imaging of defects in III-nitride semiconductors. Microscopy and Microanalysis, 20(S3), 1024-1025. https://doi.org/10.1017/S1431927614006849

Trager-Cowan, C. ; Naresh-Kumar, G. ; Allehiani, N. ; Kraeusel, S. ; Hourahine, B. ; Vespucci, S. ; Thomson, D. ; Bruckbauer, J. ; Kusch, G. ; Edwards, P. R. ; Martin, R. W. ; Mauder, C. ; Day, A. P. ; Winkelmann, A. ; Vilalta-Clemente, A. ; Wilkinson, A. J. ; Parbrook, P. J. ; Kappers, M. J. ; Moram, M. A. ; Oliver, R. A. ; Humphreys, C. J. ; Shields, P. ; Le Boulbar, E. D. ; Maneuski, D. ; O'Shea, V. ; Mingard, K. P. / Electron channeling contrast imaging of defects in III-nitride semiconductors. In: Microscopy and Microanalysis. 2014 ; Vol. 20, No. S3. pp. 1024-1025.

@article{8f553e1645dd46dfb0fe26a215858186,

title = "Electron channeling contrast imaging of defects in III-nitride semiconductors",

author = "C. Trager-Cowan and G. Naresh-Kumar and N. Allehiani and S. Kraeusel and B. Hourahine and S. Vespucci and D. Thomson and J. Bruckbauer and G. Kusch and Edwards, {P. R.} and Martin, {R. W.} and C. Mauder and Day, {A. P.} and A. Winkelmann and A. Vilalta-Clemente and Wilkinson, {A. J.} and Parbrook, {P. J.} and Kappers, {M. J.} and Moram, {M. A.} and Oliver, {R. A.} and Humphreys, {C. J.} and P. Shields and {Le Boulbar}, {E. D.} and D. Maneuski and V. O'Shea and Mingard, {K. P.}",

year = "2014",

month = aug,

doi = "10.1017/S1431927614006849",

language = "English",

volume = "20",

pages = "1024--1025",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Cambridge University Press",

number = "S3",

note = "Microscopy & Microanalysis 2014 ; Conference date: 03-08-2014 Through 07-08-2014",

}

Trager-Cowan, C , Naresh-Kumar, G , Allehiani, N, Kraeusel, S, Hourahine, B, Vespucci, S, Thomson, D, Bruckbauer, J, Kusch, G, Edwards, PR , Martin, RW, Mauder, C, Day, AP, Winkelmann, A, Vilalta-Clemente, A, Wilkinson, AJ, Parbrook, PJ, Kappers, MJ, Moram, MA, Oliver, RA, Humphreys, CJ, Shields, P, Le Boulbar, ED, Maneuski, D, O'Shea, V & Mingard, KP 2014, 'Electron channeling contrast imaging of defects in III-nitride semiconductors', Microscopy and Microanalysis, vol. 20, no. S3, pp. 1024-1025. https://doi.org/10.1017/S1431927614006849

Electron channeling contrast imaging of defects in III-nitride semiconductors. / Trager-Cowan, C.; Naresh-Kumar, G.; Allehiani, N.; Kraeusel, S.; Hourahine, B.; Vespucci, S.; Thomson, D.; Bruckbauer, J.; Kusch, G.; Edwards, P. R.; Martin, R. W.; Mauder, C.; Day, A. P.; Winkelmann, A.; Vilalta-Clemente, A.; Wilkinson, A. J.; Parbrook, P. J.; Kappers, M. J.; Moram, M. A.; Oliver, R. A.; Humphreys, C. J.; Shields, P.; Le Boulbar, E. D.; Maneuski, D.; O'Shea, V.; Mingard, K. P.

In: Microscopy and Microanalysis, Vol. 20, No. S3, 08.2014, p. 1024-1025.

Research output: Contribution to journal › Conference Contribution › peer-review

TY - JOUR

T1 - Electron channeling contrast imaging of defects in III-nitride semiconductors

AU - Trager-Cowan, C.

AU - Naresh-Kumar, G.

AU - Allehiani, N.

AU - Kraeusel, S.

AU - Hourahine, B.

AU - Vespucci, S.

AU - Thomson, D.

AU - Bruckbauer, J.

AU - Kusch, G.

AU - Edwards, P. R.

AU - Martin, R. W.

AU - Mauder, C.

AU - Day, A. P.

AU - Winkelmann, A.

AU - Vilalta-Clemente, A.

AU - Wilkinson, A. J.

AU - Parbrook, P. J.

AU - Kappers, M. J.

AU - Moram, M. A.

AU - Oliver, R. A.

AU - Humphreys, C. J.

AU - Shields, P.

AU - Le Boulbar, E. D.

AU - Maneuski, D.

AU - O'Shea, V.

AU - Mingard, K. P.

PY - 2014/8

Y1 - 2014/8

UR - http://journals.cambridge.org/action/displayJournal?jid=MAM

U2 - 10.1017/S1431927614006849

DO - 10.1017/S1431927614006849

M3 - Conference Contribution

VL - 20

SP - 1024

EP - 1025

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

SN - 1431-9276

IS - S3

T2 - Microscopy & Microanalysis 2014

Y2 - 3 August 2014 through 7 August 2014

ER -

Electron channeling contrast imaging of defects in III-nitride semiconductors

Access to Document

Other files and links

Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.

Gallium nitride enabled hybrid and flexible photonics

Lighting the future

Cite this

Electron channeling contrast imaging of defects in III-nitride semiconductors

Access to Document

Other files and links

Projects

Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.

Gallium nitride enabled hybrid and flexible photonics

Lighting the future

Cite this