Electron channeling contrast imaging of defects in III-nitride semiconductors

C. Trager-Cowan, G. Naresh-Kumar, N. Allehiani, S. Kraeusel, B. Hourahine, S. Vespucci, D. Thomson, J. Bruckbauer, G. Kusch, P. R. Edwards, R. W. Martin, C. Mauder, A. P. Day, A. Winkelmann, A. Vilalta-Clemente, A. J. Wilkinson, P. J. Parbrook, M. J. Kappers, M. A. Moram, R. A. OliverC. J. Humphreys, P. Shields, E. D. Le Boulbar, D. Maneuski, V. O'Shea, K. P. Mingard

Research output: Contribution to journal › Conference Contribution

69 Downloads (Pure)
Original languageEnglish
Pages (from-to)1024-1025
Number of pages2
JournalMicroscopy and Microanalysis
Volume20
Issue numberS3
DOIs
Publication statusPublished - Aug 2014
EventMicroscopy & Microanalysis 2014 - Connecticut, Hartford, United States
Duration: 3 Aug 2014 → 7 Aug 2014

Cite this

Trager-Cowan, C. ; Naresh-Kumar, G. ; Allehiani, N. ; Kraeusel, S. ; Hourahine, B. ; Vespucci, S. ; Thomson, D. ; Bruckbauer, J. ; Kusch, G. ; Edwards, P. R. ; Martin, R. W. ; Mauder, C. ; Day, A. P. ; Winkelmann, A. ; Vilalta-Clemente, A. ; Wilkinson, A. J. ; Parbrook, P. J. ; Kappers, M. J. ; Moram, M. A. ; Oliver, R. A. ; Humphreys, C. J. ; Shields, P. ; Le Boulbar, E. D. ; Maneuski, D. ; O'Shea, V. ; Mingard, K. P. / Electron channeling contrast imaging of defects in III-nitride semiconductors. In: Microscopy and Microanalysis. 2014 ; Vol. 20, No. S3. pp. 1024-1025.
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title = "Electron channeling contrast imaging of defects in III-nitride semiconductors",
author = "C. Trager-Cowan and G. Naresh-Kumar and N. Allehiani and S. Kraeusel and B. Hourahine and S. Vespucci and D. Thomson and J. Bruckbauer and G. Kusch and Edwards, {P. R.} and Martin, {R. W.} and C. Mauder and Day, {A. P.} and A. Winkelmann and A. Vilalta-Clemente and Wilkinson, {A. J.} and Parbrook, {P. J.} and Kappers, {M. J.} and Moram, {M. A.} and Oliver, {R. A.} and Humphreys, {C. J.} and P. Shields and {Le Boulbar}, {E. D.} and D. Maneuski and V. O'Shea and Mingard, {K. P.}",
year = "2014",
month = "8",
doi = "10.1017/S1431927614006849",
language = "English",
volume = "20",
pages = "1024--1025",
journal = "Microscopy and Microanalysis",
issn = "1431-9276",
number = "S3",

}

Trager-Cowan, C, Naresh-Kumar, G, Allehiani, N, Kraeusel, S, Hourahine, B, Vespucci, S, Thomson, D, Bruckbauer, J, Kusch, G, Edwards, PR, Martin, RW, Mauder, C, Day, AP, Winkelmann, A, Vilalta-Clemente, A, Wilkinson, AJ, Parbrook, PJ, Kappers, MJ, Moram, MA, Oliver, RA, Humphreys, CJ, Shields, P, Le Boulbar, ED, Maneuski, D, O'Shea, V & Mingard, KP 2014, 'Electron channeling contrast imaging of defects in III-nitride semiconductors', Microscopy and Microanalysis, vol. 20, no. S3, pp. 1024-1025. https://doi.org/10.1017/S1431927614006849

Electron channeling contrast imaging of defects in III-nitride semiconductors. / Trager-Cowan, C.; Naresh-Kumar, G.; Allehiani, N.; Kraeusel, S.; Hourahine, B.; Vespucci, S.; Thomson, D.; Bruckbauer, J.; Kusch, G.; Edwards, P. R.; Martin, R. W.; Mauder, C.; Day, A. P.; Winkelmann, A.; Vilalta-Clemente, A.; Wilkinson, A. J.; Parbrook, P. J.; Kappers, M. J.; Moram, M. A.; Oliver, R. A.; Humphreys, C. J.; Shields, P.; Le Boulbar, E. D.; Maneuski, D.; O'Shea, V.; Mingard, K. P.

In: Microscopy and Microanalysis, Vol. 20, No. S3, 08.2014, p. 1024-1025.

Research output: Contribution to journal › Conference Contribution

TY - JOUR

T1 - Electron channeling contrast imaging of defects in III-nitride semiconductors

AU - Trager-Cowan, C.

AU - Naresh-Kumar, G.

AU - Allehiani, N.

AU - Kraeusel, S.

AU - Hourahine, B.

AU - Vespucci, S.

AU - Thomson, D.

AU - Bruckbauer, J.

AU - Kusch, G.

AU - Edwards, P. R.

AU - Martin, R. W.

AU - Mauder, C.

AU - Day, A. P.

AU - Winkelmann, A.

AU - Vilalta-Clemente, A.

AU - Wilkinson, A. J.

AU - Parbrook, P. J.

AU - Kappers, M. J.

AU - Moram, M. A.

AU - Oliver, R. A.

AU - Humphreys, C. J.

AU - Shields, P.

AU - Le Boulbar, E. D.

AU - Maneuski, D.

AU - O'Shea, V.

AU - Mingard, K. P.

PY - 2014/8

Y1 - 2014/8

UR - http://journals.cambridge.org/action/displayJournal?jid=MAM

U2 - 10.1017/S1431927614006849

DO - 10.1017/S1431927614006849

M3 - Conference Contribution

VL - 20

SP - 1024

EP - 1025

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

SN - 1431-9276

IS - S3

ER -

Trager-Cowan C, Naresh-Kumar G, Allehiani N, Kraeusel S, Hourahine B, Vespucci S et al. Electron channeling contrast imaging of defects in III-nitride semiconductors. Microscopy and Microanalysis. 2014 Aug;20(S3):1024-1025. https://doi.org/10.1017/S1431927614006849

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