Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures

U. Jahn, S. Dahr, P. Waltereit, H. Kostial, I.M. Watson, K. Fujiwara

Research output: Contribution to journalArticle

Abstract

The electronic properties of (In,Ga)N/GaN quantum wells depend significantly on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g. for cathodoluminescence (CL). For unintentionally doped structures, we observe an LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p-n structure is changed towards the flat-band conditions during LEEBI, indicating electron-beam-induced passivation of acceptors in the p-type layer.
LanguageEnglish
Pages337-340
Number of pages3
JournalInstitute of Physics Conference Series
Volume180
Publication statusPublished - 2003

Fingerprint

quantum wells
electron beams
electronics
irradiation
energy
cathodoluminescence
optical transition
passivity
quantum efficiency
activation
dosage
electrical resistivity
electric fields

Keywords

  • N/GaN quantum wells
  • irradiation
  • energy

Cite this

Jahn, U. ; Dahr, S. ; Waltereit, P. ; Kostial, H. ; Watson, I.M. ; Fujiwara, K. / Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures. In: Institute of Physics Conference Series. 2003 ; Vol. 180. pp. 337-340.
@article{a6194a4fa33b49e38621814e7804d377,
title = "Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures",
abstract = "The electronic properties of (In,Ga)N/GaN quantum wells depend significantly on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g. for cathodoluminescence (CL). For unintentionally doped structures, we observe an LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p-n structure is changed towards the flat-band conditions during LEEBI, indicating electron-beam-induced passivation of acceptors in the p-type layer.",
keywords = "N/GaN quantum wells, irradiation, energy",
author = "U. Jahn and S. Dahr and P. Waltereit and H. Kostial and I.M. Watson and K. Fujiwara",
year = "2003",
language = "English",
volume = "180",
pages = "337--340",
journal = "Institute of Physics Conference Series",
issn = "0951-3248",
publisher = "IOP Publishing Ltd.",

}

Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures. / Jahn, U.; Dahr, S.; Waltereit, P.; Kostial, H.; Watson, I.M.; Fujiwara, K.

In: Institute of Physics Conference Series, Vol. 180, 2003, p. 337-340.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electron-beam-induced modifications of electronic properties in GaN-based quantum well structures

AU - Jahn, U.

AU - Dahr, S.

AU - Waltereit, P.

AU - Kostial, H.

AU - Watson, I.M.

AU - Fujiwara, K.

PY - 2003

Y1 - 2003

N2 - The electronic properties of (In,Ga)N/GaN quantum wells depend significantly on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g. for cathodoluminescence (CL). For unintentionally doped structures, we observe an LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p-n structure is changed towards the flat-band conditions during LEEBI, indicating electron-beam-induced passivation of acceptors in the p-type layer.

AB - The electronic properties of (In,Ga)N/GaN quantum wells depend significantly on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g. for cathodoluminescence (CL). For unintentionally doped structures, we observe an LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers is not varied, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p-n structure is changed towards the flat-band conditions during LEEBI, indicating electron-beam-induced passivation of acceptors in the p-type layer.

KW - N/GaN quantum wells

KW - irradiation

KW - energy

M3 - Article

VL - 180

SP - 337

EP - 340

JO - Institute of Physics Conference Series

T2 - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

SN - 0951-3248

ER -