Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates

C. Trager-Cowan, P. J. Parbrook, F. Yang, X. Chen, B. Henderson, K. P. O'Donnell, B. Cockayne, P. J. Wright

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The variation in the penetration depth of an electron beam with energy is used to profile the strain in various CdS epilayers. The red shift of the excitonic luminescence with increasing beam energy is consistent with an increase of compressive strain with depth.

Original languageEnglish
Pages (from-to)532-535
Number of pages4
JournalJournal of Crystal Growth
Volume117
Issue number1-4
DOIs
Publication statusPublished - 2 Feb 1992

Keywords

  • excitonic luminescence
  • electron beams
  • photoluminescence

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