Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates

C. Trager-Cowan, P. J. Parbrook, F. Yang, X. Chen, B. Henderson, K. P. O'Donnell, B. Cockayne, P. J. Wright

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The variation in the penetration depth of an electron beam with energy is used to profile the strain in various CdS epilayers. The red shift of the excitonic luminescence with increasing beam energy is consistent with an increase of compressive strain with depth.

Original languageEnglish
Pages (from-to)532-535
Number of pages4
JournalJournal of Crystal Growth
Volume117
Issue number1-4
DOIs
Publication statusPublished - 2 Feb 1992

Fingerprint

Metallorganic vapor phase epitaxy
Epilayers
vapor phase epitaxy
Electron beams
electron beams
Substrates
red shift
excitation
Luminescence
penetration
luminescence
energy
profiles
gallium arsenide

Keywords

  • excitonic luminescence
  • electron beams
  • photoluminescence

Cite this

@article{d72ab77871ca4e2f8d5a461eb48dfa88,
title = "Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates",
abstract = "The variation in the penetration depth of an electron beam with energy is used to profile the strain in various CdS epilayers. The red shift of the excitonic luminescence with increasing beam energy is consistent with an increase of compressive strain with depth.",
keywords = "excitonic luminescence, electron beams, photoluminescence",
author = "C. Trager-Cowan and Parbrook, {P. J.} and F. Yang and X. Chen and B. Henderson and O'Donnell, {K. P.} and B. Cockayne and Wright, {P. J.}",
year = "1992",
month = "2",
day = "2",
doi = "10.1016/0022-0248(92)90808-V",
language = "English",
volume = "117",
pages = "532--535",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
number = "1-4",

}

Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates. / Trager-Cowan, C.; Parbrook, P. J.; Yang, F.; Chen, X.; Henderson, B.; O'Donnell, K. P.; Cockayne, B.; Wright, P. J.

In: Journal of Crystal Growth, Vol. 117, No. 1-4, 02.02.1992, p. 532-535.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates

AU - Trager-Cowan, C.

AU - Parbrook, P. J.

AU - Yang, F.

AU - Chen, X.

AU - Henderson, B.

AU - O'Donnell, K. P.

AU - Cockayne, B.

AU - Wright, P. J.

PY - 1992/2/2

Y1 - 1992/2/2

N2 - The variation in the penetration depth of an electron beam with energy is used to profile the strain in various CdS epilayers. The red shift of the excitonic luminescence with increasing beam energy is consistent with an increase of compressive strain with depth.

AB - The variation in the penetration depth of an electron beam with energy is used to profile the strain in various CdS epilayers. The red shift of the excitonic luminescence with increasing beam energy is consistent with an increase of compressive strain with depth.

KW - excitonic luminescence

KW - electron beams

KW - photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=0027108165&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(92)90808-V

DO - 10.1016/0022-0248(92)90808-V

M3 - Article

VL - 117

SP - 532

EP - 535

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -