Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films

C. Trager-Cowan, F. Sweeney, P. W. Trimby, A. P. Day, A. Gholinia, N. -H. Schmidt, P. J. Parbrook, A. J. Wilkinson, I. M. Watson

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from a series of GaN thin films of increasing thickness and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 nm, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that electron channeling contrast images may be used to image tilt, atomic steps, and threading dislocations in GaN thin films.

LanguageEnglish
Number of pages8
JournalPhysical Review B
Volume75
Issue number8
DOIs
Publication statusPublished - Feb 2007

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Electron diffraction
Nitrides
nitrides
Imaging techniques
Thin films
Electrons
thin films
diffraction
electrons
Epitaxial films
image contrast
Dislocations (crystals)
Electron microscopes
electron microscopes
spatial resolution
Scanning
scanning

Keywords

  • plan-view image
  • kikuchi diffraction
  • microscope
  • rocks

Cite this

Trager-Cowan, C. ; Sweeney, F. ; Trimby, P. W. ; Day, A. P. ; Gholinia, A. ; Schmidt, N. -H. ; Parbrook, P. J. ; Wilkinson, A. J. ; Watson, I. M. / Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films. In: Physical Review B. 2007 ; Vol. 75, No. 8.
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abstract = "In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from a series of GaN thin films of increasing thickness and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 nm, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that electron channeling contrast images may be used to image tilt, atomic steps, and threading dislocations in GaN thin films.",
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Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films. / Trager-Cowan, C.; Sweeney, F.; Trimby, P. W.; Day, A. P.; Gholinia, A.; Schmidt, N. -H.; Parbrook, P. J.; Wilkinson, A. J.; Watson, I. M.

In: Physical Review B, Vol. 75, No. 8, 02.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films

AU - Trager-Cowan, C.

AU - Sweeney, F.

AU - Trimby, P. W.

AU - Day, A. P.

AU - Gholinia, A.

AU - Schmidt, N. -H.

AU - Parbrook, P. J.

AU - Wilkinson, A. J.

AU - Watson, I. M.

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AB - In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from a series of GaN thin films of increasing thickness and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 nm, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that electron channeling contrast images may be used to image tilt, atomic steps, and threading dislocations in GaN thin films.

KW - plan-view image

KW - kikuchi diffraction

KW - microscope

KW - rocks

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