Electrical stability of a-Si:H TFTs fabricated at 150ºC

Helena Gleskova, S. Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

This chapter looks at electrical stability of a-Si:H TFTs fabricated at 150ºC
Original languageEnglish
Title of host publicationAmorphous and heterogeneous silicon-based films – 2001
Subtitle of host publicationvolume 664 - MRS proceedings
EditorsM. Stutzmann, J. B. Boyce, J. D. Cohen, R. W. Collins, J. Hanna
Place of PublicationWarrendale, PA
PagesA19.7.1-A19.7.6
Number of pages6
Volume664
Publication statusPublished - 15 Oct 2001
EventMRS Spring Meeting 2001 - San Francisco, United States
Duration: 16 Apr 200120 Apr 2001

Publication series

NameMRS Symposium Proceedings
PublisherMaterials Research Society
Volume664

Conference

ConferenceMRS Spring Meeting 2001
CountryUnited States
CitySan Francisco
Period16/04/0120/04/01

Keywords

  • electrical stability
  • si:h tft
  • fabricated
  • 150-degrees-C

Cite this

Gleskova, H., & Wagner, S. (2001). Electrical stability of a-Si:H TFTs fabricated at 150ºC. In M. Stutzmann, J. B. Boyce, J. D. Cohen, R. W. Collins, & J. Hanna (Eds.), Amorphous and heterogeneous silicon-based films – 2001: volume 664 - MRS proceedings (Vol. 664, pp. A19.7.1-A19.7.6). (MRS Symposium Proceedings; Vol. 664)..