Electrical response to uniaxial tensile strain of a-Si:H TFTs fabricated on polyimide foils

Helena Gleskova, Sigurd Wagner

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The electro-mechanical response of amorphous silicon thin-film transistors fabricated on polyimide foil depends on the transistors’ strain history. As long as the tensile strain applied to the transistor is kept below the electrical failure strain, the sensitivity of the field-effect mobility to tensile strain weakens with increasing number of load cycles. Once electrical failure is reached, the electro-mechanical response is controlled by the duration for which the TFT was held at failure strain. TFTs held at the failure strain for several hours do not recover. TFTs held at failure strain for only a short period of time do recover, and one cannot distinguish their transfer characteristics from those of a virgin TFT. However, their electron mobility, while still increasing with rising tensile strain, responds more weakly to strain than a virgin TFT.

Fingerprint

Tensile strain
polyimides
Polyimides
Metal foil
foils
transistors
Transistors
electron mobility
Electron mobility
amorphous silicon
Thin film transistors
Amorphous silicon
histories
cycles
sensitivity
thin films

Keywords

  • amorphous silicon
  • thin-film transistor
  • mechanical properties
  • plastic substrate
  • strain

Cite this

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title = "Electrical response to uniaxial tensile strain of a-Si:H TFTs fabricated on polyimide foils",
abstract = "The electro-mechanical response of amorphous silicon thin-film transistors fabricated on polyimide foil depends on the transistors’ strain history. As long as the tensile strain applied to the transistor is kept below the electrical failure strain, the sensitivity of the field-effect mobility to tensile strain weakens with increasing number of load cycles. Once electrical failure is reached, the electro-mechanical response is controlled by the duration for which the TFT was held at failure strain. TFTs held at the failure strain for several hours do not recover. TFTs held at failure strain for only a short period of time do recover, and one cannot distinguish their transfer characteristics from those of a virgin TFT. However, their electron mobility, while still increasing with rising tensile strain, responds more weakly to strain than a virgin TFT.",
keywords = "amorphous silicon, thin-film transistor, mechanical properties, plastic substrate, strain",
author = "Helena Gleskova and Sigurd Wagner",
note = "Invited talk",
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Electrical response to uniaxial tensile strain of a-Si:H TFTs fabricated on polyimide foils. / Gleskova, Helena; Wagner, Sigurd.

In: Journal of Non-Crystalline Solids, Vol. 354, No. 19-25, 01.05.2008, p. 2627-2631.

Research output: Contribution to journalArticle

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AU - Gleskova, Helena

AU - Wagner, Sigurd

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Y1 - 2008/5/1

N2 - The electro-mechanical response of amorphous silicon thin-film transistors fabricated on polyimide foil depends on the transistors’ strain history. As long as the tensile strain applied to the transistor is kept below the electrical failure strain, the sensitivity of the field-effect mobility to tensile strain weakens with increasing number of load cycles. Once electrical failure is reached, the electro-mechanical response is controlled by the duration for which the TFT was held at failure strain. TFTs held at the failure strain for several hours do not recover. TFTs held at failure strain for only a short period of time do recover, and one cannot distinguish their transfer characteristics from those of a virgin TFT. However, their electron mobility, while still increasing with rising tensile strain, responds more weakly to strain than a virgin TFT.

AB - The electro-mechanical response of amorphous silicon thin-film transistors fabricated on polyimide foil depends on the transistors’ strain history. As long as the tensile strain applied to the transistor is kept below the electrical failure strain, the sensitivity of the field-effect mobility to tensile strain weakens with increasing number of load cycles. Once electrical failure is reached, the electro-mechanical response is controlled by the duration for which the TFT was held at failure strain. TFTs held at the failure strain for several hours do not recover. TFTs held at failure strain for only a short period of time do recover, and one cannot distinguish their transfer characteristics from those of a virgin TFT. However, their electron mobility, while still increasing with rising tensile strain, responds more weakly to strain than a virgin TFT.

KW - amorphous silicon

KW - thin-film transistor

KW - mechanical properties

KW - plastic substrate

KW - strain

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