Electrical response of amorphous silicon thin-film transistors under mechanical strain

H. Gleskova, S. Wagner, W. Soboyejo, Z. Suo

Research output: Contribution to journalArticle

138 Citations (Scopus)

Abstract

We evaluated amorphous silicon thin-film transistors (TFTs) fabricated on polyimide foil under uniaxial compressive or tensile strain. The strain was induced by bending or stretching. The on- current and hence the electron linear mobility µ depend on strain as µ = µ0(1 + 26E), where tensile strain has a positive sign and the strain is parallel to the TFT source-drain current path. Upon the application of compressive or tensile strain the mobility changes "instantly" and under compression then remains constant for up to 40 h. In tension, the TFTs fail mechanically at a strain of about +0.003 but recover if the strain is released "immediately."
LanguageEnglish
Pages6224-6229
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number10
DOIs
Publication statusPublished - 15 Nov 2002

Fingerprint

amorphous silicon
transistors
thin films
polyimides
foils
electrons

Keywords

  • optical-absorption
  • 150-degrees-C
  • mobility
  • foil

Cite this

Gleskova, H. ; Wagner, S. ; Soboyejo, W. ; Suo, Z. / Electrical response of amorphous silicon thin-film transistors under mechanical strain. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 10. pp. 6224-6229.
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Electrical response of amorphous silicon thin-film transistors under mechanical strain. / Gleskova, H.; Wagner, S.; Soboyejo, W.; Suo, Z.

In: Journal of Applied Physics, Vol. 92, No. 10, 15.11.2002, p. 6224-6229.

Research output: Contribution to journalArticle

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