Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy

Humberto M. Foronda, Daniel A. Hunter, Mike Pietsch, Luca Sulmoni, Anton Muhin, Sarina Graupeter, Norman Susilo, Marcel Schilling, Johannes Enslin, Klaus Irmscher, Robert W. Martin, Tim Wernicke, Michael Kneissl

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