Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy

Humberto M. Foronda, Daniel A. Hunter, Mike Pietsch, Luca Sulmoni, Anton Muhin, Sarina Graupeter, Norman Susilo, Marcel Schilling, Johannes Enslin, Klaus Irmscher, Robert W. Martin, Tim Wernicke, Michael Kneissl

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In this work, the growth and conductivity of semipolar AlxGa1−xN:Si with (11-22) orientation are investigated. AlxGa1−xN:Si (x = 0.60 ± 0.03 and x = 0.80 ± 0.02) layers were grown with different SiH4 partial pressures, and the electrical properties were determined using Hall measurements at room temperature. The aluminum mole fraction was measured by wavelength dispersive x-ray spectroscopy and x-ray diffraction, and the Si-concentration was measured by wavelength dispersive x-ray spectroscopy and secondary ion mass spectroscopy. Layer resistivities as low as 0.024 Ω cm for x = 0.6 and 0.042 Ω cm for x = 0.8 were achieved. For both aluminum mole fractions, the resistivity exhibits a minimum with the increasing Si concentration, which can be explained by compensation due to the formation of cation vacancy complexes at high doping levels. The onset of self-compensation occurs at larger estimated Si concentrations for larger Al contents.
Original languageEnglish
Article number221101
Number of pages5
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 30 Nov 2020


  • Hall measurements
  • electrical properties
  • partial pressures

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