Electrical activity of carbon-hydrogen centers in Si

O. Andersen, A.R. Peaker, L. Dobaczewski, K. Bonde Nielsen, B. Hourahine, R. Jones, P.R. Briddon, S. Öberg

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Abstract

The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.
Original languageEnglish
Article number235205
Number of pages8
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume66
Issue number23
DOIs
Publication statusPublished - 13 Dec 2002

Keywords

  • electrical activity
  • carbon-hydrogen centers
  • Si
  • nanoscience

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