Electrical activity of carbon-hydrogen centers in Si

O. Andersen, A.R. Peaker, L. Dobaczewski, K. Bonde Nielsen, B. Hourahine, R. Jones, P.R. Briddon, S. Öberg

Research output: Contribution to journalArticle

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Abstract

The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.
Original languageEnglish
Article number235205
Number of pages8
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume66
Issue number23
DOIs
Publication statusPublished - 13 Dec 2002

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Hydrogen
Carbon
Defects
carbon
hydrogen
Tensors
Capacitance
defects
Spectroscopy
Impurities
Temperature
capacitance
tensors
impurities
high resolution
spectroscopy
energy

Keywords

  • electrical activity
  • carbon-hydrogen centers
  • Si
  • nanoscience

Cite this

Andersen, O., Peaker, A. R., Dobaczewski, L., Bonde Nielsen, K., Hourahine, B., Jones, R., ... Öberg, S. (2002). Electrical activity of carbon-hydrogen centers in Si. Physical Review B: Condensed Matter and Materials Physics, 66(23), [235205]. https://doi.org/10.1103/PhysRevB.66.235205
Andersen, O. ; Peaker, A.R. ; Dobaczewski, L. ; Bonde Nielsen, K. ; Hourahine, B. ; Jones, R. ; Briddon, P.R. ; Öberg, S. / Electrical activity of carbon-hydrogen centers in Si. In: Physical Review B: Condensed Matter and Materials Physics. 2002 ; Vol. 66, No. 23.
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Andersen, O, Peaker, AR, Dobaczewski, L, Bonde Nielsen, K, Hourahine, B, Jones, R, Briddon, PR & Öberg, S 2002, 'Electrical activity of carbon-hydrogen centers in Si', Physical Review B: Condensed Matter and Materials Physics, vol. 66, no. 23, 235205. https://doi.org/10.1103/PhysRevB.66.235205

Electrical activity of carbon-hydrogen centers in Si. / Andersen, O.; Peaker, A.R.; Dobaczewski, L.; Bonde Nielsen, K.; Hourahine, B.; Jones, R.; Briddon, P.R.; Öberg, S.

In: Physical Review B: Condensed Matter and Materials Physics, Vol. 66, No. 23, 235205, 13.12.2002.

Research output: Contribution to journalArticle

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T1 - Electrical activity of carbon-hydrogen centers in Si

AU - Andersen, O.

AU - Peaker, A.R.

AU - Dobaczewski, L.

AU - Bonde Nielsen, K.

AU - Hourahine, B.

AU - Jones, R.

AU - Briddon, P.R.

AU - Öberg, S.

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KW - carbon-hydrogen centers

KW - Si

KW - nanoscience

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JO - Physical Review B: Condensed Matter and Materials Physics

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