Efficient GaN-based micro-LED arrays

H.W. Choi; C.W. Jeon; M.D. Dawson; P.R. Edwards; R.W. Martin; Christian Wetzel; Edward T. Yu; James S. Speck; Angela Rizzi; Yasuhiko Arakawa

Efficient GaN-based micro-LED arrays

H.W. Choi, C.W. Jeon, M.D. Dawson, P.R. Edwards, R.W. Martin, Christian Wetzel (Editor), Edward T. Yu (Editor), James S. Speck (Editor), Angela Rizzi (Editor), Yasuhiko Arakawa (Editor)

Research output: Chapter in Book/Report/Conference proceeding › Chapter

12 Citations (Scopus)

Abstract

Highly efficient, two-dimensional arrays of parallel-addressed InGaN blue micro-LEDs with individual element diameters of 8, 12 and 20microns have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallisation, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have I-V characteristics similar to those of broad-area reference LEDs fabricated from the same wafer, and give superior (3mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.

Original language	English
Title of host publication	Proceedings of the 2002 MRS Fall Meeting
Pages	433-438
Number of pages	5
Volume	Symposium L
Edition	743
Publication status	Published - 2002

Keywords

InGaN
blue micro-LED
fabrication
efficiencies

Cite this

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title = "Efficient GaN-based micro-LED arrays",

abstract = "Highly efficient, two-dimensional arrays of parallel-addressed InGaN blue micro-LEDs with individual element diameters of 8, 12 and 20microns have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallisation, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have I-V characteristics similar to those of broad-area reference LEDs fabricated from the same wafer, and give superior (3mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.",

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T1 - Efficient GaN-based micro-LED arrays

AU - Choi, H.W.

AU - Jeon, C.W.

AU - Dawson, M.D.

AU - Edwards, P.R.

AU - Martin, R.W.

A2 - Wetzel, Christian

A2 - Yu, Edward T.

A2 - Speck, James S.

A2 - Rizzi, Angela

A2 - Arakawa, Yasuhiko

N1 - AHR

PY - 2002

Y1 - 2002

N2 - Highly efficient, two-dimensional arrays of parallel-addressed InGaN blue micro-LEDs with individual element diameters of 8, 12 and 20microns have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallisation, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have I-V characteristics similar to those of broad-area reference LEDs fabricated from the same wafer, and give superior (3mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.

AB - Highly efficient, two-dimensional arrays of parallel-addressed InGaN blue micro-LEDs with individual element diameters of 8, 12 and 20microns have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallisation, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have I-V characteristics similar to those of broad-area reference LEDs fabricated from the same wafer, and give superior (3mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.

KW - InGaN

KW - blue micro-LED

KW - fabrication

KW - efficiencies

UR - http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=2561&DID=118502&action=detail

M3 - Chapter

VL - Symposium L

SP - 433

EP - 438

BT - Proceedings of the 2002 MRS Fall Meeting

ER -

Efficient GaN-based micro-LED arrays

Abstract

Keywords

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