Efficient Forster transfer mediated by excitons in InGaN/GaN quantum well/polyfluorene heterostructures

G. Itskos, G. Heliotis, C. Belton, I.M. Watson, M.D. Dawson, D.D.C. Bradley, R. Murray

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Abstract

We report on novel InGaN/GaN quantum well/polyfluorene heterostructures where efficient Förster energy transfer from the well to the organic layer occurs. We show that Mott-Wannier excitons dominate the quantum well luminescence in the quantum wells in the 77 to at least 225 K range and are responsible for the efficient energy channeling to the polyfluorene films.
Original languageEnglish
Pages (from-to)355-356
Number of pages1
JournalAmerican Institute of Physics Conference Proceedings
Volume893
Issue number1
DOIs
Publication statusPublished - 10 Apr 2007

Keywords

  • semiconductor quantum wells
  • indium compounds
  • gallium compounds
  • nitrogen compounds
  • organic semiconductors
  • polymer films
  • excitons
  • luminescence

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