Efficient Forster transfer mediated by excitons in InGaN/GaN quantum well/polyfluorene heterostructures

G. Itskos, G. Heliotis, C. Belton, I.M. Watson, M.D. Dawson, D.D.C. Bradley, R. Murray

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report on novel InGaN/GaN quantum well/polyfluorene heterostructures where efficient Förster energy transfer from the well to the organic layer occurs. We show that Mott-Wannier excitons dominate the quantum well luminescence in the quantum wells in the 77 to at least 225 K range and are responsible for the efficient energy channeling to the polyfluorene films.
LanguageEnglish
Pages355-356
Number of pages1
JournalAmerican Institute of Physics Conference Proceedings
Volume893
Issue number1
DOIs
Publication statusPublished - 10 Apr 2007

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excitons
quantum wells
energy transfer
luminescence
energy

Keywords

  • semiconductor quantum wells
  • indium compounds
  • gallium compounds
  • nitrogen compounds
  • organic semiconductors
  • polymer films
  • excitons
  • luminescence

Cite this

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title = "Efficient Forster transfer mediated by excitons in InGaN/GaN quantum well/polyfluorene heterostructures",
abstract = "We report on novel InGaN/GaN quantum well/polyfluorene heterostructures where efficient F{\"o}rster energy transfer from the well to the organic layer occurs. We show that Mott-Wannier excitons dominate the quantum well luminescence in the quantum wells in the 77 to at least 225 K range and are responsible for the efficient energy channeling to the polyfluorene films.",
keywords = "semiconductor quantum wells, indium compounds, gallium compounds, nitrogen compounds, organic semiconductors, polymer films, excitons, luminescence",
author = "G. Itskos and G. Heliotis and C. Belton and I.M. Watson and M.D. Dawson and D.D.C. Bradley and R. Murray",
year = "2007",
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Efficient Forster transfer mediated by excitons in InGaN/GaN quantum well/polyfluorene heterostructures. / Itskos, G.; Heliotis, G.; Belton, C.; Watson, I.M.; Dawson, M.D.; Bradley, D.D.C.; Murray, R.

In: American Institute of Physics Conference Proceedings, Vol. 893, No. 1, 10.04.2007, p. 355-356.

Research output: Contribution to journalArticle

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T1 - Efficient Forster transfer mediated by excitons in InGaN/GaN quantum well/polyfluorene heterostructures

AU - Itskos, G.

AU - Heliotis, G.

AU - Belton, C.

AU - Watson, I.M.

AU - Dawson, M.D.

AU - Bradley, D.D.C.

AU - Murray, R.

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KW - semiconductor quantum wells

KW - indium compounds

KW - gallium compounds

KW - nitrogen compounds

KW - organic semiconductors

KW - polymer films

KW - excitons

KW - luminescence

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