Efficient flip-chip InGaN micro-pixellated light-emitting diode arrays: promising candidates for micro-displays and colour conversion

Z. Gong, E. Gu, S.R. Jin, D. Massoubre, B.J.E. Guilhabert, H.X. Zhang, M.D. Dawson, V. Poher, G.T. Kennedy, P.M.W. French, M.A.A. Neil

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Flip-chip InGaN micro-pixellated LED arrays with high pixel density and improved device performance are presented. The devices, with 64 × 64 elements, each of which have a 20 µm emission aperture on a 50 µm pitch, are fabricated with a matrix-addressable scheme at blue (470 nm) and UV (370 nm) wavelengths, respectively. These devices are then flip-chip bonded onto silicon mounts. Good emission uniformity across the LED array is demonstrated, which can be attributed to the introduced n-metal tracks adjacent to each n-GaN mesa and the p-contact lines running across parallel columns. More importantly, with a flip-chip configuration, the optical power output and the current-handling capability of these new devices are substantially enhanced, due to the improved heat dissipation capability and the increased light extraction efficiency. For instance, each pixel in the flip-chip blue (respectively UV) LED arrays can provide a maximum power density 43 W cm−2 (respectively 6.5 W cm−2) at an extremely high current density up to 4000 A cm−2 before breakdown. These flip-chip devices are then combined with a computer-programmable driver circuit interface to produce high-quality micro-scale displays. Other promising applications of these LEDs, such as colour conversion with quantum dots, are also demonstrated.
LanguageEnglish
JournalJournal of Physics D: Applied Physics
Volume41
Issue number094002
DOIs
Publication statusPublished - Apr 2008

Fingerprint

Light emitting diodes
light emitting diodes
Display devices
chips
Color
color
Flip chip devices
Pixels
pixels
Silicon
Heat losses
Semiconductor quantum dots
Interfaces (computer)
mesas
Current density
Metals
high current
radiant flux density
Wavelength
breakdown

Keywords

  • inGaN
  • diode arrays
  • micro-displays
  • colour conversion
  • photonics
  • optics

Cite this

Gong, Z. ; Gu, E. ; Jin, S.R. ; Massoubre, D. ; Guilhabert, B.J.E. ; Zhang, H.X. ; Dawson, M.D. ; Poher, V. ; Kennedy, G.T. ; French, P.M.W. ; Neil, M.A.A. / Efficient flip-chip InGaN micro-pixellated light-emitting diode arrays: promising candidates for micro-displays and colour conversion. In: Journal of Physics D: Applied Physics. 2008 ; Vol. 41, No. 094002.
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Efficient flip-chip InGaN micro-pixellated light-emitting diode arrays: promising candidates for micro-displays and colour conversion. / Gong, Z.; Gu, E.; Jin, S.R.; Massoubre, D.; Guilhabert, B.J.E.; Zhang, H.X.; Dawson, M.D.; Poher, V.; Kennedy, G.T.; French, P.M.W.; Neil, M.A.A.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 094002, 04.2008.

Research output: Contribution to journalArticle

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AU - Gong, Z.

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AU - Massoubre, D.

AU - Guilhabert, B.J.E.

AU - Zhang, H.X.

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