Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures

G. Itskos, G. Heliotis, P.G. Lagoudakis, J. Lupton, N.P. Barradas, E. Alves, S.M.D.S. Pereira, I.M. Watson, M.D. Dawson, J. Feldmann, R. Murray, D.D.C. Bradley

Research output: Contribution to journalArticle

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Abstract

We investigate interactions between Mott-Wannier (MW) and Frenkel excitons in a family of hybrid structures consisting of thin organic (polyfluorene) films placed in close proximity (systematically adjusted by GaN cap layer thickness) to single inorganic [(Ga,In)N∕GaN] quantum wells (QWs). Characterization of the QW structures using Rutherford backscattering spectrometry and atomic force microscopy allows direct measurement of the thickness and the morphology of the GaN cap layers. Time-resolved photoluminescence experiments in the 8–75 K temperature range confirm our earlier demonstration that nonradiative energy transfer can occur between inorganic and organic semiconductors. We assign the transfer mechanism to resonant Förster (dipole-dipole) coupling between MW exciton energy donors and Frenkel exciton energy acceptors and at 15 K we find transfer efficiencies of up to 43%. The dependence of the energy transfer rate on the distance R between the inorganic QW donor dipole and organic film acceptor dipole indicates that a plane-plane interaction, characterized by a 1∕R2 variation, best describes the situation found in our structures.
LanguageEnglish
Pages035344
Number of pages7
JournalPhysical Review B
Volume76
Issue number3
DOIs
Publication statusPublished - 31 Jul 2007

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Excitons
Semiconductor quantum wells
Heterojunctions
excitons
quantum wells
Semiconductor materials
dipoles
Energy transfer
caps
Semiconducting organic compounds
energy transfer
Rutherford backscattering spectroscopy
Beam plasma interactions
Spectrometry
hybrid structures
Atomic force microscopy
Photoluminescence
organic semiconductors
Demonstrations
proximity

Keywords

  • resonant
  • dipole-dipole coupling
  • Mott-Wannier
  • Frenkel
  • excitons
  • polyfluorene films
  • inGaN-GaN
  • quantum wells

Cite this

Itskos, G., Heliotis, G., Lagoudakis, P. G., Lupton, J., Barradas, N. P., Alves, E., ... Bradley, D. D. C. (2007). Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures. Physical Review B, 76(3), 035344. https://doi.org/10.1103/PhysRevB.76.035344
Itskos, G. ; Heliotis, G. ; Lagoudakis, P.G. ; Lupton, J. ; Barradas, N.P. ; Alves, E. ; Pereira, S.M.D.S. ; Watson, I.M. ; Dawson, M.D. ; Feldmann, J. ; Murray, R. ; Bradley, D.D.C. / Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures. In: Physical Review B. 2007 ; Vol. 76, No. 3. pp. 035344.
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abstract = "We investigate interactions between Mott-Wannier (MW) and Frenkel excitons in a family of hybrid structures consisting of thin organic (polyfluorene) films placed in close proximity (systematically adjusted by GaN cap layer thickness) to single inorganic [(Ga,In)N∕GaN] quantum wells (QWs). Characterization of the QW structures using Rutherford backscattering spectrometry and atomic force microscopy allows direct measurement of the thickness and the morphology of the GaN cap layers. Time-resolved photoluminescence experiments in the 8–75 K temperature range confirm our earlier demonstration that nonradiative energy transfer can occur between inorganic and organic semiconductors. We assign the transfer mechanism to resonant F{\"o}rster (dipole-dipole) coupling between MW exciton energy donors and Frenkel exciton energy acceptors and at 15 K we find transfer efficiencies of up to 43{\%}. The dependence of the energy transfer rate on the distance R between the inorganic QW donor dipole and organic film acceptor dipole indicates that a plane-plane interaction, characterized by a 1∕R2 variation, best describes the situation found in our structures.",
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author = "G. Itskos and G. Heliotis and P.G. Lagoudakis and J. Lupton and N.P. Barradas and E. Alves and S.M.D.S. Pereira and I.M. Watson and M.D. Dawson and J. Feldmann and R. Murray and D.D.C. Bradley",
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Itskos, G, Heliotis, G, Lagoudakis, PG, Lupton, J, Barradas, NP, Alves, E, Pereira, SMDS, Watson, IM, Dawson, MD, Feldmann, J, Murray, R & Bradley, DDC 2007, 'Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures' Physical Review B, vol. 76, no. 3, pp. 035344. https://doi.org/10.1103/PhysRevB.76.035344

Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures. / Itskos, G.; Heliotis, G.; Lagoudakis, P.G.; Lupton, J.; Barradas, N.P.; Alves, E.; Pereira, S.M.D.S.; Watson, I.M.; Dawson, M.D.; Feldmann, J.; Murray, R.; Bradley, D.D.C.

In: Physical Review B, Vol. 76, No. 3, 31.07.2007, p. 035344.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures

AU - Itskos, G.

AU - Heliotis, G.

AU - Lagoudakis, P.G.

AU - Lupton, J.

AU - Barradas, N.P.

AU - Alves, E.

AU - Pereira, S.M.D.S.

AU - Watson, I.M.

AU - Dawson, M.D.

AU - Feldmann, J.

AU - Murray, R.

AU - Bradley, D.D.C.

PY - 2007/7/31

Y1 - 2007/7/31

N2 - We investigate interactions between Mott-Wannier (MW) and Frenkel excitons in a family of hybrid structures consisting of thin organic (polyfluorene) films placed in close proximity (systematically adjusted by GaN cap layer thickness) to single inorganic [(Ga,In)N∕GaN] quantum wells (QWs). Characterization of the QW structures using Rutherford backscattering spectrometry and atomic force microscopy allows direct measurement of the thickness and the morphology of the GaN cap layers. Time-resolved photoluminescence experiments in the 8–75 K temperature range confirm our earlier demonstration that nonradiative energy transfer can occur between inorganic and organic semiconductors. We assign the transfer mechanism to resonant Förster (dipole-dipole) coupling between MW exciton energy donors and Frenkel exciton energy acceptors and at 15 K we find transfer efficiencies of up to 43%. The dependence of the energy transfer rate on the distance R between the inorganic QW donor dipole and organic film acceptor dipole indicates that a plane-plane interaction, characterized by a 1∕R2 variation, best describes the situation found in our structures.

AB - We investigate interactions between Mott-Wannier (MW) and Frenkel excitons in a family of hybrid structures consisting of thin organic (polyfluorene) films placed in close proximity (systematically adjusted by GaN cap layer thickness) to single inorganic [(Ga,In)N∕GaN] quantum wells (QWs). Characterization of the QW structures using Rutherford backscattering spectrometry and atomic force microscopy allows direct measurement of the thickness and the morphology of the GaN cap layers. Time-resolved photoluminescence experiments in the 8–75 K temperature range confirm our earlier demonstration that nonradiative energy transfer can occur between inorganic and organic semiconductors. We assign the transfer mechanism to resonant Förster (dipole-dipole) coupling between MW exciton energy donors and Frenkel exciton energy acceptors and at 15 K we find transfer efficiencies of up to 43%. The dependence of the energy transfer rate on the distance R between the inorganic QW donor dipole and organic film acceptor dipole indicates that a plane-plane interaction, characterized by a 1∕R2 variation, best describes the situation found in our structures.

KW - resonant

KW - dipole-dipole coupling

KW - Mott-Wannier

KW - Frenkel

KW - excitons

KW - polyfluorene films

KW - inGaN-GaN

KW - quantum wells

U2 - 10.1103/PhysRevB.76.035344

DO - 10.1103/PhysRevB.76.035344

M3 - Article

VL - 76

SP - 035344

JO - Physical Review B: Condensed Matter and Materials Physics

T2 - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

IS - 3

ER -