Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers

D.-U. Li; C.-M. Tsai

doi:10.1049/el:20057575

Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers

D.-U. Li, C.-M. Tsai

Strathclyde Institute Of Pharmacy And Biomedical Sciences

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A novel intrinsic collector-base capacitance (CCB) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 mum SiGe BiCMOS process could output 9 VPP differential output swing with rise/fall time (20 to 80%) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W

Original language	English
Pages (from-to)	126-127
Number of pages	2
Journal	Electronics Letters
Volume	41
Issue number	3
DOIs	https://doi.org/10.1049/el:20057575
Publication status	Published - 22 Feb 2005

Keywords

voltage multipliers
BiCMOS integrated circuits
capacitance
circuit feedback
driver circuits
Ge-Si alloys
optical communication equipment
optical modulation
semiconductor materials

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10.1049/el:20057575

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title = "Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers",

abstract = "A novel intrinsic collector-base capacitance (CCB) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 mum SiGe BiCMOS process could output 9 VPP differential output swing with rise/fall time (20 to 80%) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W",

keywords = "voltage multipliers, BiCMOS integrated circuits, capacitance, circuit feedback, driver circuits, Ge-Si alloys, optical communication equipment, optical modulation, semiconductor materials",

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AB - A novel intrinsic collector-base capacitance (CCB) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 mum SiGe BiCMOS process could output 9 VPP differential output swing with rise/fall time (20 to 80%) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W

KW - voltage multipliers

KW - BiCMOS integrated circuits

KW - capacitance

KW - circuit feedback

KW - driver circuits

KW - Ge-Si alloys

KW - optical communication equipment

KW - optical modulation

KW - semiconductor materials

U2 - 10.1049/el:20057575

DO - 10.1049/el:20057575

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JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers

Abstract

Keywords

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