Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers

D.-U. Li, C.-M. Tsai

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A novel intrinsic collector-base capacitance (CCB) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 mum SiGe BiCMOS process could output 9 VPP differential output swing with rise/fall time (20 to 80%) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W
LanguageEnglish
Pages126-127
Number of pages2
JournalElectronics Letters
Volume41
Issue number3
DOIs
Publication statusPublished - 22 Feb 2005

Fingerprint

Electric breakdown
Modulators
Electric potential
Electric power utilization
Capacitance
Feedback
Networks (circuits)

Keywords

  • voltage multipliers
  • BiCMOS integrated circuits
  • capacitance
  • circuit feedback
  • driver circuits
  • Ge-Si alloys
  • optical communication equipment
  • optical modulation
  • semiconductor materials

Cite this

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title = "Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers",
abstract = "A novel intrinsic collector-base capacitance (CCB) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 mum SiGe BiCMOS process could output 9 VPP differential output swing with rise/fall time (20 to 80{\%}) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W",
keywords = "voltage multipliers, BiCMOS integrated circuits, capacitance, circuit feedback, driver circuits, Ge-Si alloys, optical communication equipment, optical modulation, semiconductor materials",
author = "D.-U. Li and C.-M. Tsai",
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journal = "Electronics Letters",
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Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers. / Li, D.-U.; Tsai, C.-M.

In: Electronics Letters, Vol. 41, No. 3, 22.02.2005, p. 126-127.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers

AU - Li, D.-U.

AU - Tsai, C.-M.

PY - 2005/2/22

Y1 - 2005/2/22

N2 - A novel intrinsic collector-base capacitance (CCB) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 mum SiGe BiCMOS process could output 9 VPP differential output swing with rise/fall time (20 to 80%) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W

AB - A novel intrinsic collector-base capacitance (CCB) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 mum SiGe BiCMOS process could output 9 VPP differential output swing with rise/fall time (20 to 80%) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W

KW - voltage multipliers

KW - BiCMOS integrated circuits

KW - capacitance

KW - circuit feedback

KW - driver circuits

KW - Ge-Si alloys

KW - optical communication equipment

KW - optical modulation

KW - semiconductor materials

U2 - 10.1049/el:20057575

DO - 10.1049/el:20057575

M3 - Article

VL - 41

SP - 126

EP - 127

JO - Electronics Letters

T2 - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 3

ER -