Efficient base driver circuit for silicon carbide bipolar junction transistors

N. McNeill, B.H. Stark, S.J. Finney, D. Holliday, H. Dymond

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Abstract

The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a highvoltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.
Original languageEnglish
Pages (from-to)1450-1452
Number of pages3
JournalElectronics Letters
Volume54
Issue number25
DOIs
Publication statusPublished - 13 Dec 2018

Keywords

  • high transient base-emitter voltages
  • low driver circuit power
  • silicon carbide bipolar junction transistor

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