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The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a highvoltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.
- high transient base-emitter voltages
- low driver circuit power
- silicon carbide bipolar junction transistor
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- 1 Active
1/06/18 → 31/05/22