Efficient base driver circuit for silicon carbide bipolar junction transistors

N. McNeill, B.H. Stark, S.J. Finney, D. Holliday, H. Dymond

Research output: Contribution to journalArticle

Abstract

The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a highvoltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.
LanguageEnglish
Pages1450-1452
Number of pages3
JournalElectronics Letters
Volume54
Issue number25
DOIs
Publication statusPublished - 13 Dec 2018

Fingerprint

Bipolar transistors
Silicon carbide
Networks (circuits)
Electric potential
Rails
Electric power utilization

Keywords

  • high transient base-emitter voltages
  • low driver circuit power
  • silicon carbide bipolar junction transistor

Cite this

McNeill, N. ; Stark, B.H. ; Finney, S.J. ; Holliday, D. ; Dymond, H. / Efficient base driver circuit for silicon carbide bipolar junction transistors. In: Electronics Letters. 2018 ; Vol. 54, No. 25. pp. 1450-1452.
@article{4e326a3af480433ba751f78b52da2b72,
title = "Efficient base driver circuit for silicon carbide bipolar junction transistors",
abstract = "The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a highvoltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.",
keywords = "high transient base-emitter voltages, low driver circuit power, silicon carbide bipolar junction transistor",
author = "N. McNeill and B.H. Stark and S.J. Finney and D. Holliday and H. Dymond",
year = "2018",
month = "12",
day = "13",
doi = "10.1049/el.2018.7057",
language = "English",
volume = "54",
pages = "1450--1452",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "25",

}

Efficient base driver circuit for silicon carbide bipolar junction transistors. / McNeill, N.; Stark, B.H.; Finney, S.J.; Holliday, D.; Dymond, H.

In: Electronics Letters, Vol. 54, No. 25, 13.12.2018, p. 1450-1452.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Efficient base driver circuit for silicon carbide bipolar junction transistors

AU - McNeill, N.

AU - Stark, B.H.

AU - Finney, S.J.

AU - Holliday, D.

AU - Dymond, H.

PY - 2018/12/13

Y1 - 2018/12/13

N2 - The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a highvoltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.

AB - The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a highvoltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption.

KW - high transient base-emitter voltages

KW - low driver circuit power

KW - silicon carbide bipolar junction transistor

UR - http://digital-library.theiet.org/content/journals/el

U2 - 10.1049/el.2018.7057

DO - 10.1049/el.2018.7057

M3 - Article

VL - 54

SP - 1450

EP - 1452

JO - Electronics Letters

T2 - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 25

ER -