Efficacy of laser preionization with a semiconductor source and propene addition

S.J. Scott, A.L.S. Smith

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

It is established that propene is an effective additive instabilising uv preionised CO2 TEA laser discharges: its effect being particularly pronounced with semiconductor-edge preionised lasers where the preionisation levels are shown to be low.
LanguageEnglish
Pages1242-1243
Number of pages2
JournalJournal of Physics E: Scientific Instruments
Volume17
Issue number12
DOIs
Publication statusPublished - 1984

Fingerprint

TEA lasers
Propylene
Semiconductor materials
Lasers
lasers
propylene

Keywords

  • laser preionization
  • semiconductor
  • propene addition
  • CO2
  • TEA laser

Cite this

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title = "Efficacy of laser preionization with a semiconductor source and propene addition",
abstract = "It is established that propene is an effective additive instabilising uv preionised CO2 TEA laser discharges: its effect being particularly pronounced with semiconductor-edge preionised lasers where the preionisation levels are shown to be low.",
keywords = "laser preionization, semiconductor, propene addition, CO2, TEA laser",
author = "S.J. Scott and A.L.S. Smith",
year = "1984",
doi = "10.1088/0022-3735/17/12/036",
language = "English",
volume = "17",
pages = "1242--1243",
journal = "Journal of Physics E: Scientific Instruments",
issn = "0022-3735",
publisher = "Institute of Physics and the Physical Society",
number = "12",

}

Efficacy of laser preionization with a semiconductor source and propene addition. / Scott, S.J.; Smith, A.L.S.

In: Journal of Physics E: Scientific Instruments, Vol. 17, No. 12, 1984, p. 1242-1243.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Efficacy of laser preionization with a semiconductor source and propene addition

AU - Scott, S.J.

AU - Smith, A.L.S.

PY - 1984

Y1 - 1984

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AB - It is established that propene is an effective additive instabilising uv preionised CO2 TEA laser discharges: its effect being particularly pronounced with semiconductor-edge preionised lasers where the preionisation levels are shown to be low.

KW - laser preionization

KW - semiconductor

KW - propene addition

KW - CO2

KW - TEA laser

U2 - 10.1088/0022-3735/17/12/036

DO - 10.1088/0022-3735/17/12/036

M3 - Article

VL - 17

SP - 1242

EP - 1243

JO - Journal of Physics E: Scientific Instruments

T2 - Journal of Physics E: Scientific Instruments

JF - Journal of Physics E: Scientific Instruments

SN - 0022-3735

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