Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass

M.A. Sulimov, M.V. Yakushev, J. Márquez-Prieto, I. Forbes, P.R. Edwards, V.D. Zhivulko, O.M. Borodavchenko, A. V. Mudryi, J. Krustok, R.W. Martin

Research output: Contribution to journalArticle

Abstract

The effect of solar cell processing (including etching in KCN along with deposition of CdS and ZnO) on photoluminescence (PL) spectra and bandgap Eg (measured at 4.2 K by photoluminescence excitation) of Cu2ZnSnSe4 films, produced by selenising metallic precursors at 450 °C, 500 °C and 550 °C, was studied. Temperature and excitation intensity analysis of the P1 dominant band in the PL spectra of solar cells suggests that after processing this band still can be assigned to the free-to-bound recombination of free electrons with holes bound at deep acceptor levels influenced by valence band-tails. However processing increased the intensity of P1 and blue shifted it. The strongest effect was observed for the film selenised at 500 °C. For the film selenised at 450 °C the blue shift and increase in the intensity were smaller and only a slight intensity rise was found for the film selenised at 550 °C. The intensity increase we assign to a reduction in the concentration of non-radiative recombination centers on the surface because of the etching and changes in doping due to inter-diffusion of Cd, S, Se and Zn after the deposition of CdS. Such an inter-diffusion depends on the elemental composition of the films defining the chemistry of defects and influencing Eg which increased in the film selenised at 500 °C but decreased in the other films. Processing increased the P1 shift rate (j-shift) with excitation power change in all the films demonstrating a higher compensation degree in the solar cells which is consistent with the formation of an interface layer containing new donors CdCu.
Original languageEnglish
Pages (from-to)146-151
Number of pages6
JournalThin Solid Films
Volume672
Early online date3 Jan 2019
DOIs
Publication statusPublished - 28 Feb 2019

Fingerprint

Photoluminescence
photoluminescence
Glass
glass
excitation
Solar cells
Temperature
temperature
solar cells
Processing
Etching
etching
shift
Valence bands
blue shift
free electrons
Energy gap
Doping (additives)
chemistry
valence

Keywords

  • copper zinc tin selenide
  • solar cells
  • photoluminescence
  • selenisation
  • optical spectroscopy

Cite this

Sulimov, M.A. ; Yakushev, M.V. ; Márquez-Prieto, J. ; Forbes, I. ; Edwards, P.R. ; Zhivulko, V.D. ; Borodavchenko, O.M. ; Mudryi, A. V. ; Krustok, J. ; Martin, R.W. / Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass. In: Thin Solid Films. 2019 ; Vol. 672. pp. 146-151.
@article{8aeee00bfe584625846a7b0c58ceaa6b,
title = "Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass",
abstract = "The effect of solar cell processing (including etching in KCN along with deposition of CdS and ZnO) on photoluminescence (PL) spectra and bandgap Eg (measured at 4.2 K by photoluminescence excitation) of Cu2ZnSnSe4 films, produced by selenising metallic precursors at 450 °C, 500 °C and 550 °C, was studied. Temperature and excitation intensity analysis of the P1 dominant band in the PL spectra of solar cells suggests that after processing this band still can be assigned to the free-to-bound recombination of free electrons with holes bound at deep acceptor levels influenced by valence band-tails. However processing increased the intensity of P1 and blue shifted it. The strongest effect was observed for the film selenised at 500 °C. For the film selenised at 450 °C the blue shift and increase in the intensity were smaller and only a slight intensity rise was found for the film selenised at 550 °C. The intensity increase we assign to a reduction in the concentration of non-radiative recombination centers on the surface because of the etching and changes in doping due to inter-diffusion of Cd, S, Se and Zn after the deposition of CdS. Such an inter-diffusion depends on the elemental composition of the films defining the chemistry of defects and influencing Eg which increased in the film selenised at 500 °C but decreased in the other films. Processing increased the P1 shift rate (j-shift) with excitation power change in all the films demonstrating a higher compensation degree in the solar cells which is consistent with the formation of an interface layer containing new donors CdCu.",
keywords = "copper zinc tin selenide, solar cells, photoluminescence, selenisation, optical spectroscopy",
author = "M.A. Sulimov and M.V. Yakushev and J. M{\'a}rquez-Prieto and I. Forbes and P.R. Edwards and V.D. Zhivulko and O.M. Borodavchenko and Mudryi, {A. V.} and J. Krustok and R.W. Martin",
year = "2019",
month = "2",
day = "28",
doi = "10.1016/j.tsf.2019.01.002",
language = "English",
volume = "672",
pages = "146--151",
journal = "Thin Solid Films",
issn = "0040-6090",

}

Sulimov, MA, Yakushev, MV, Márquez-Prieto, J, Forbes, I, Edwards, PR, Zhivulko, VD, Borodavchenko, OM, Mudryi, AV, Krustok, J & Martin, RW 2019, 'Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass', Thin Solid Films, vol. 672, pp. 146-151. https://doi.org/10.1016/j.tsf.2019.01.002

Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass. / Sulimov, M.A.; Yakushev, M.V.; Márquez-Prieto, J.; Forbes, I.; Edwards, P.R.; Zhivulko, V.D.; Borodavchenko, O.M.; Mudryi, A. V.; Krustok, J.; Martin, R.W.

In: Thin Solid Films, Vol. 672, 28.02.2019, p. 146-151.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass

AU - Sulimov, M.A.

AU - Yakushev, M.V.

AU - Márquez-Prieto, J.

AU - Forbes, I.

AU - Edwards, P.R.

AU - Zhivulko, V.D.

AU - Borodavchenko, O.M.

AU - Mudryi, A. V.

AU - Krustok, J.

AU - Martin, R.W.

PY - 2019/2/28

Y1 - 2019/2/28

N2 - The effect of solar cell processing (including etching in KCN along with deposition of CdS and ZnO) on photoluminescence (PL) spectra and bandgap Eg (measured at 4.2 K by photoluminescence excitation) of Cu2ZnSnSe4 films, produced by selenising metallic precursors at 450 °C, 500 °C and 550 °C, was studied. Temperature and excitation intensity analysis of the P1 dominant band in the PL spectra of solar cells suggests that after processing this band still can be assigned to the free-to-bound recombination of free electrons with holes bound at deep acceptor levels influenced by valence band-tails. However processing increased the intensity of P1 and blue shifted it. The strongest effect was observed for the film selenised at 500 °C. For the film selenised at 450 °C the blue shift and increase in the intensity were smaller and only a slight intensity rise was found for the film selenised at 550 °C. The intensity increase we assign to a reduction in the concentration of non-radiative recombination centers on the surface because of the etching and changes in doping due to inter-diffusion of Cd, S, Se and Zn after the deposition of CdS. Such an inter-diffusion depends on the elemental composition of the films defining the chemistry of defects and influencing Eg which increased in the film selenised at 500 °C but decreased in the other films. Processing increased the P1 shift rate (j-shift) with excitation power change in all the films demonstrating a higher compensation degree in the solar cells which is consistent with the formation of an interface layer containing new donors CdCu.

AB - The effect of solar cell processing (including etching in KCN along with deposition of CdS and ZnO) on photoluminescence (PL) spectra and bandgap Eg (measured at 4.2 K by photoluminescence excitation) of Cu2ZnSnSe4 films, produced by selenising metallic precursors at 450 °C, 500 °C and 550 °C, was studied. Temperature and excitation intensity analysis of the P1 dominant band in the PL spectra of solar cells suggests that after processing this band still can be assigned to the free-to-bound recombination of free electrons with holes bound at deep acceptor levels influenced by valence band-tails. However processing increased the intensity of P1 and blue shifted it. The strongest effect was observed for the film selenised at 500 °C. For the film selenised at 450 °C the blue shift and increase in the intensity were smaller and only a slight intensity rise was found for the film selenised at 550 °C. The intensity increase we assign to a reduction in the concentration of non-radiative recombination centers on the surface because of the etching and changes in doping due to inter-diffusion of Cd, S, Se and Zn after the deposition of CdS. Such an inter-diffusion depends on the elemental composition of the films defining the chemistry of defects and influencing Eg which increased in the film selenised at 500 °C but decreased in the other films. Processing increased the P1 shift rate (j-shift) with excitation power change in all the films demonstrating a higher compensation degree in the solar cells which is consistent with the formation of an interface layer containing new donors CdCu.

KW - copper zinc tin selenide

KW - solar cells

KW - photoluminescence

KW - selenisation

KW - optical spectroscopy

UR - https://www.sciencedirect.com/journal/thin-solid-films

U2 - 10.1016/j.tsf.2019.01.002

DO - 10.1016/j.tsf.2019.01.002

M3 - Article

VL - 672

SP - 146

EP - 151

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -