Effects of rapid thermal annealing on the optical properties of low-loss 1.3um GaInNAs/GaAs saturable bragg reflectors

H.D. Sun, R. Macaluso, S. Calvez, G.J. Valentine, D. Burns, M.D. Dawson, K. Gundogdu, K.C. Hall, T.F. Boggess, T. Jouhti, M. Pessa

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Abstract

We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 µm saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of optical transition energies and another from the reduction of carrier localization. Time-resolved photoluminescence results at room temperature provide information about the recombination dynamics of carriers directly relevant to the application of the SBR in laser mode locking.
LanguageEnglish
Pages1418-1424
Number of pages6
JournalJournal of Applied Physics
Volume96
Issue number3
DOIs
Publication statusPublished - 1 Aug 2004

Fingerprint

Bragg reflectors
photoluminescence
optical properties
annealing
laser mode locking
reflectance
optical transition
quantum wells
bandwidth
augmentation
room temperature
temperature
energy

Keywords

  • gallium compounds
  • gallium arsenide
  • indium compounds
  • III-V semiconductors
  • semiconductor quantum wells
  • rapid thermal annealing
  • photoluminescence
  • reflectivity
  • refractive index
  • distributed Bragg reflectors
  • optical losses
  • spectral line shift
  • optical saturable absorption

Cite this

Sun, H.D. ; Macaluso, R. ; Calvez, S. ; Valentine, G.J. ; Burns, D. ; Dawson, M.D. ; Gundogdu, K. ; Hall, K.C. ; Boggess, T.F. ; Jouhti, T. ; Pessa, M. / Effects of rapid thermal annealing on the optical properties of low-loss 1.3um GaInNAs/GaAs saturable bragg reflectors. In: Journal of Applied Physics. 2004 ; Vol. 96, No. 3. pp. 1418-1424.
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abstract = "We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 µm saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of optical transition energies and another from the reduction of carrier localization. Time-resolved photoluminescence results at room temperature provide information about the recombination dynamics of carriers directly relevant to the application of the SBR in laser mode locking.",
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Sun, HD, Macaluso, R, Calvez, S, Valentine, GJ, Burns, D, Dawson, MD, Gundogdu, K, Hall, KC, Boggess, TF, Jouhti, T & Pessa, M 2004, 'Effects of rapid thermal annealing on the optical properties of low-loss 1.3um GaInNAs/GaAs saturable bragg reflectors' Journal of Applied Physics, vol. 96, no. 3, pp. 1418-1424. https://doi.org/10.1063/1.1767612

Effects of rapid thermal annealing on the optical properties of low-loss 1.3um GaInNAs/GaAs saturable bragg reflectors. / Sun, H.D.; Macaluso, R.; Calvez, S.; Valentine, G.J.; Burns, D.; Dawson, M.D.; Gundogdu, K.; Hall, K.C.; Boggess, T.F.; Jouhti, T.; Pessa, M.

In: Journal of Applied Physics, Vol. 96, No. 3, 01.08.2004, p. 1418-1424.

Research output: Contribution to journalArticle

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T1 - Effects of rapid thermal annealing on the optical properties of low-loss 1.3um GaInNAs/GaAs saturable bragg reflectors

AU - Sun, H.D.

AU - Macaluso, R.

AU - Calvez, S.

AU - Valentine, G.J.

AU - Burns, D.

AU - Dawson, M.D.

AU - Gundogdu, K.

AU - Hall, K.C.

AU - Boggess, T.F.

AU - Jouhti, T.

AU - Pessa, M.

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N2 - We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 µm saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of optical transition energies and another from the reduction of carrier localization. Time-resolved photoluminescence results at room temperature provide information about the recombination dynamics of carriers directly relevant to the application of the SBR in laser mode locking.

AB - We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 µm saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of optical transition energies and another from the reduction of carrier localization. Time-resolved photoluminescence results at room temperature provide information about the recombination dynamics of carriers directly relevant to the application of the SBR in laser mode locking.

KW - gallium compounds

KW - gallium arsenide

KW - indium compounds

KW - III-V semiconductors

KW - semiconductor quantum wells

KW - rapid thermal annealing

KW - photoluminescence

KW - reflectivity

KW - refractive index

KW - distributed Bragg reflectors

KW - optical losses

KW - spectral line shift

KW - optical saturable absorption

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JO - Journal of Applied Physics

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JF - Journal of Applied Physics

SN - 0021-8979

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ER -