Effects of mechanical strain on TFTs on spherical domes

Pai Hui Iris Hsu, M. Huang, H. Gleskova, Z. Xi, Z. Suo, Sigurd Wagner, James C. Sturm

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

In this paper, amorphous-silicon (a-Si:H) thin-film transistors (TFTs) were fabricated on a plastic substrate, which was then permanently deformed into a spherical dome shape after the device fabrication process. The TFTs were patterned in an island structure to prevent cracking in the device films during the substrate deformation. In the majority of the TFTs, the off-current and gate leakage current do not change substantially. Depending on the island structure, the electron mobility either increased or decreased after deformation. This change in mobility was correlated with the mechanical strain in the device islands determined by finite element modeling of the deformation process. Tensile strain caused slightly higher mobility in planar structures. In a mesa-type structure, silicon films on top of the pillars could be in compression after the dome deformation, leading to a slight decrease in mobility.
LanguageEnglish
Pages371-377
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume51
Issue number3
DOIs
Publication statusPublished - 1 Mar 2004

Fingerprint

Domes
Thin film transistors
Tensile strain
Electron mobility
Silicon
Substrates
Amorphous silicon
Leakage currents
Plastics
Fabrication

Keywords

  • elemental semiconductors
  • silicon compounds
  • thin film transistors
  • electrical engineering

Cite this

Hsu, P. H. I., Huang, M., Gleskova, H., Xi, Z., Suo, Z., Wagner, S., & Sturm, J. C. (2004). Effects of mechanical strain on TFTs on spherical domes. IEEE Transactions on Electron Devices, 51(3), 371-377. https://doi.org/10.1109/TED.2003.822873
Hsu, Pai Hui Iris ; Huang, M. ; Gleskova, H. ; Xi, Z. ; Suo, Z. ; Wagner, Sigurd ; Sturm, James C. / Effects of mechanical strain on TFTs on spherical domes. In: IEEE Transactions on Electron Devices. 2004 ; Vol. 51, No. 3. pp. 371-377.
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Hsu, PHI, Huang, M, Gleskova, H, Xi, Z, Suo, Z, Wagner, S & Sturm, JC 2004, 'Effects of mechanical strain on TFTs on spherical domes' IEEE Transactions on Electron Devices, vol. 51, no. 3, pp. 371-377. https://doi.org/10.1109/TED.2003.822873

Effects of mechanical strain on TFTs on spherical domes. / Hsu, Pai Hui Iris; Huang, M.; Gleskova, H.; Xi, Z.; Suo, Z.; Wagner, Sigurd ; Sturm, James C.

In: IEEE Transactions on Electron Devices, Vol. 51, No. 3, 01.03.2004, p. 371-377.

Research output: Contribution to journalArticle

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