TY - JOUR
T1 - Effects of mechanical strain on TFTs on spherical domes
AU - Hsu, Pai Hui Iris
AU - Huang, M.
AU - Gleskova, H.
AU - Xi, Z.
AU - Suo, Z.
AU - Wagner, Sigurd
AU - Sturm, James C.
PY - 2004/3/1
Y1 - 2004/3/1
N2 - In this paper, amorphous-silicon (a-Si:H) thin-film transistors (TFTs) were fabricated on a plastic substrate, which was then permanently deformed into a spherical dome shape after the device fabrication process. The TFTs were patterned in an island structure to prevent cracking in the device films during the substrate deformation. In the majority of the TFTs, the off-current and gate leakage current do not change substantially. Depending on the island structure, the electron mobility either increased or decreased after deformation. This change in mobility was correlated with the mechanical strain in the device islands determined by finite element modeling of the deformation process. Tensile strain caused slightly higher mobility in planar structures. In a mesa-type structure, silicon films on top of the pillars could be in compression after the dome deformation, leading to a slight decrease in mobility.
AB - In this paper, amorphous-silicon (a-Si:H) thin-film transistors (TFTs) were fabricated on a plastic substrate, which was then permanently deformed into a spherical dome shape after the device fabrication process. The TFTs were patterned in an island structure to prevent cracking in the device films during the substrate deformation. In the majority of the TFTs, the off-current and gate leakage current do not change substantially. Depending on the island structure, the electron mobility either increased or decreased after deformation. This change in mobility was correlated with the mechanical strain in the device islands determined by finite element modeling of the deformation process. Tensile strain caused slightly higher mobility in planar structures. In a mesa-type structure, silicon films on top of the pillars could be in compression after the dome deformation, leading to a slight decrease in mobility.
KW - elemental semiconductors
KW - silicon compounds
KW - thin film transistors
KW - electrical engineering
UR - http://www.scopus.com/inward/record.url?scp=1642290716&partnerID=8YFLogxK
U2 - 10.1109/TED.2003.822873
DO - 10.1109/TED.2003.822873
M3 - Article
SN - 0018-9383
VL - 51
SP - 371
EP - 377
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 3
ER -