Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

M. J. Wallace, P. R. Edwards, M. J. Kappers, M. A. Hopkins, F. Oehler, S. Sivaraya, R. A. Oliver, C. J. Humphreys, D. W. E. Allsopp, R. W. Martin

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this paper we present a combined cathodoluminescence and electron beam induced current study of the optical and electrical properties of InGaN LEDs grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2T) whereas in the other device, each barrier was grown in a two step process, with the first few nanometers at a lower temperature (Q2T). It was found that, in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal.
LanguageEnglish
Article number115705
Number of pages6
JournalJournal of Applied Physics
Volume 117
Issue number11
Early online date20 Mar 2015
DOIs
Publication statusPublished - 2015

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light emitting diodes
luminescence
conductivity
cathodoluminescence
electrical properties
quantum wells
electron beams
optical properties
temperature

Keywords

  • cathodoluminescence
  • light emitting diode
  • electron beams

Cite this

Wallace, M. J. ; Edwards, P. R. ; Kappers, M. J. ; Hopkins, M. A. ; Oehler, F. ; Sivaraya, S. ; Oliver, R. A. ; Humphreys, C. J. ; Allsopp, D. W. E. ; Martin, R. W. / Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. In: Journal of Applied Physics. 2015 ; Vol. 117, No. 11.
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title = "Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes",
abstract = "In this paper we present a combined cathodoluminescence and electron beam induced current study of the optical and electrical properties of InGaN LEDs grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2T) whereas in the other device, each barrier was grown in a two step process, with the first few nanometers at a lower temperature (Q2T). It was found that, in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal.",
keywords = "cathodoluminescence, light emitting diode, electron beams",
author = "Wallace, {M. J.} and Edwards, {P. R.} and Kappers, {M. J.} and Hopkins, {M. A.} and F. Oehler and S. Sivaraya and Oliver, {R. A.} and Humphreys, {C. J.} and Allsopp, {D. W. E.} and Martin, {R. W.}",
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Wallace, MJ, Edwards, PR, Kappers, MJ, Hopkins, MA, Oehler, F, Sivaraya, S, Oliver, RA, Humphreys, CJ, Allsopp, DWE & Martin, RW 2015, 'Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes' Journal of Applied Physics, vol. 117, no. 11, 115705. https://doi.org/10.1063/1.4915628

Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. / Wallace, M. J.; Edwards, P. R.; Kappers, M. J.; Hopkins, M. A.; Oehler, F.; Sivaraya, S.; Oliver, R. A.; Humphreys, C. J.; Allsopp, D. W. E.; Martin, R. W.

In: Journal of Applied Physics, Vol. 117, No. 11, 115705, 2015.

Research output: Contribution to journalArticle

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T1 - Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

AU - Wallace, M. J.

AU - Edwards, P. R.

AU - Kappers, M. J.

AU - Hopkins, M. A.

AU - Oehler, F.

AU - Sivaraya, S.

AU - Oliver, R. A.

AU - Humphreys, C. J.

AU - Allsopp, D. W. E.

AU - Martin, R. W.

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PY - 2015

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N2 - In this paper we present a combined cathodoluminescence and electron beam induced current study of the optical and electrical properties of InGaN LEDs grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2T) whereas in the other device, each barrier was grown in a two step process, with the first few nanometers at a lower temperature (Q2T). It was found that, in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal.

AB - In this paper we present a combined cathodoluminescence and electron beam induced current study of the optical and electrical properties of InGaN LEDs grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2T) whereas in the other device, each barrier was grown in a two step process, with the first few nanometers at a lower temperature (Q2T). It was found that, in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal.

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KW - light emitting diode

KW - electron beams

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