Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

M. J. Wallace; P. R. Edwards; M. J. Kappers; M. A. Hopkins; F. Oehler; S. Sivaraya; R. A. Oliver; C. J. Humphreys; D. W. E. Allsopp; R. W. Martin

doi:10.1063/1.4915628

Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

M. J. Wallace, P. R. Edwards, M. J. Kappers, M. A. Hopkins, F. Oehler, S. Sivaraya, R. A. Oliver, C. J. Humphreys, D. W. E. Allsopp, R. W. Martin

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Abstract

In this paper we present a combined cathodoluminescence and electron beam induced current study of the optical and electrical properties of InGaN LEDs grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2T) whereas in the other device, each barrier was grown in a two step process, with the first few nanometers at a lower temperature (Q2T). It was found that, in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal.

Original language	English
Article number	115705
Number of pages	6
Journal	Journal of Applied Physics
Volume	117
Issue number	11
Early online date	20 Mar 2015
DOIs	https://doi.org/10.1063/1.4915628
Publication status	Published - 2015

Keywords

cathodoluminescence
light emitting diode
electron beams

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10.1063/1.4915628

Wallace-etal-JAP-2015-Effect-of-the-barrier-growth-mode-on-the-luminescence-and-conductivityFinal published version, 3.31 MBLicence: CC BY 4.0

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Wallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Oliver, R. A., Humphreys, C. J., Allsopp, D. W. E., & Martin, R. W. (2015). Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, 117(11), Article 115705. https://doi.org/10.1063/1.4915628

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title = "Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes",

abstract = "In this paper we present a combined cathodoluminescence and electron beam induced current study of the optical and electrical properties of InGaN LEDs grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2T) whereas in the other device, each barrier was grown in a two step process, with the first few nanometers at a lower temperature (Q2T). It was found that, in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal.",

keywords = "cathodoluminescence, light emitting diode, electron beams",

author = "Wallace, {M. J.} and Edwards, {P. R.} and Kappers, {M. J.} and Hopkins, {M. A.} and F. Oehler and S. Sivaraya and Oliver, {R. A.} and Humphreys, {C. J.} and Allsopp, {D. W. E.} and Martin, {R. W.}",

note = "Date of Accetance: 09/03/2015",

year = "2015",

doi = "10.1063/1.4915628",

language = "English",

volume = " 117",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "11",

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TY - JOUR

T1 - Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

AU - Wallace, M. J.

AU - Edwards, P. R.

AU - Kappers, M. J.

AU - Hopkins, M. A.

AU - Oehler, F.

AU - Sivaraya, S.

AU - Oliver, R. A.

AU - Humphreys, C. J.

AU - Allsopp, D. W. E.

AU - Martin, R. W.

N1 - Date of Accetance: 09/03/2015

PY - 2015

Y1 - 2015

N2 - In this paper we present a combined cathodoluminescence and electron beam induced current study of the optical and electrical properties of InGaN LEDs grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2T) whereas in the other device, each barrier was grown in a two step process, with the first few nanometers at a lower temperature (Q2T). It was found that, in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal.

AB - In this paper we present a combined cathodoluminescence and electron beam induced current study of the optical and electrical properties of InGaN LEDs grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2T) whereas in the other device, each barrier was grown in a two step process, with the first few nanometers at a lower temperature (Q2T). It was found that, in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal.

KW - cathodoluminescence

KW - light emitting diode

KW - electron beams

UR - http://scitation.aip.org/content/aip/journal/jap

U2 - 10.1063/1.4915628

DO - 10.1063/1.4915628

M3 - Article

SN - 0021-8979

VL - 117

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 115705

ER -

Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

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Maps, histograms and other data supporting the Journal of Applied Physics paper titled Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

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Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Abstract

Keywords

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Lighting the future

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Maps, histograms and other data supporting the Journal of Applied Physics paper titled Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Research output

Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

Cite this