Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability

Alex Z. Kattamis, Kunigunde H. Cherenack, Bahman Hekmatshoar, I. Chun Cheng, Helena Gleskova, James C. Sturm, Sigard Wagner

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power density between 22 and 110 mW/cm2 and temperature between 150C and 300C. The time needed to shift the threshold voltage by 2 V varies by a factor of 12 between low power and low temperature, and high power and high temperature. These results highlight the importance of fabricating a-Si:H TFTs on flexible plastic with the SiNx gate dielectric deposited at the highest possible power and temperature.
LanguageEnglish
Pages606-608
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number7
DOIs
Publication statusPublished - Jul 2007

Fingerprint

Gate dielectrics
Thin film transistors
Temperature
Amorphous silicon
Silicon nitride
Threshold voltage
Plastics

Keywords

  • amorphous-silicon (a-Si:H)
  • electrical stability
  • thin-film transistor
  • plasma stability
  • plasma temperature

Cite this

Kattamis, A. Z., Cherenack, K. H., Hekmatshoar, B., Cheng, I. C., Gleskova, H., Sturm, J. C., & Wagner, S. (2007). Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability. IEEE Electron Device Letters, 28(7), 606-608. https://doi.org/10.1109/LED.2007.900078
Kattamis, Alex Z. ; Cherenack, Kunigunde H. ; Hekmatshoar, Bahman ; Cheng, I. Chun ; Gleskova, Helena ; Sturm, James C. ; Wagner, Sigard. / Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability. In: IEEE Electron Device Letters. 2007 ; Vol. 28, No. 7. pp. 606-608.
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Kattamis, AZ, Cherenack, KH, Hekmatshoar, B, Cheng, IC, Gleskova, H, Sturm, JC & Wagner, S 2007, 'Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability' IEEE Electron Device Letters, vol. 28, no. 7, pp. 606-608. https://doi.org/10.1109/LED.2007.900078

Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability. / Kattamis, Alex Z.; Cherenack, Kunigunde H.; Hekmatshoar, Bahman; Cheng, I. Chun; Gleskova, Helena; Sturm, James C.; Wagner, Sigard.

In: IEEE Electron Device Letters, Vol. 28, No. 7, 07.2007, p. 606-608.

Research output: Contribution to journalArticle

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T1 - Effect of SiNx gate dielectric deposition power and temperature on a-Si:H TFT stability

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AU - Cherenack, Kunigunde H.

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AU - Cheng, I. Chun

AU - Gleskova, Helena

AU - Sturm, James C.

AU - Wagner, Sigard

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