Abstract
The stability of thin-film transistors (TFTs) of hydrogenated amorphous-silicon (a-Si:H) against gate-bias stress is improved by raising the deposition power and temperature of the silicon nitride gate dielectric. We studied the effects of power density between 22 and 110 mW/cm2 and temperature between 150C and 300C. The time needed to shift the threshold voltage by 2 V varies by a factor of 12 between low power and low temperature, and high power and high temperature. These results highlight the importance of fabricating a-Si:H TFTs on flexible plastic with the SiNx gate dielectric deposited at the highest possible power and temperature.
Original language | English |
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Pages (from-to) | 606-608 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 28 |
Issue number | 7 |
DOIs | |
Publication status | Published - Jul 2007 |
Keywords
- amorphous-silicon (a-Si:H)
- electrical stability
- thin-film transistor
- plasma stability
- plasma temperature