Effect of shading on amorphous silicon single and double junction photovoltaic modules

A. Johansson, D.G. Infield

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The effect of shading amorphous silicon photovoltaic mini-modules is investigated by means of measurements and simulation. Several devices are measured under varying degrees of shading and the reverse bias behaviour is investigated including the reverse breakdown voltage. A simulation using a modified single diode model for amorphous silicon is presented, in which the Bishop extension of the shunt resistance is used to simulate the behaviour of shaded devices. Agreement with measurements is discussed. The differences between the effect of shading on amorphous silicon and on crystalline silicon devices are investigated based on this model. It is shown that the thin film cells do not develop hot spots in the same manner as crystalline silicon devices, but always break down at the interconnection to the adjacent cell.
Original languageEnglish
Pages (from-to)65-72
Number of pages8
JournalInternational Journal of Ambient Energy
Volume25
Issue number2
DOIs
Publication statusPublished - 2004

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Amorphous silicon
Crystalline materials
Silicon
Electric breakdown
Diodes
Thin films

Keywords

  • amorphous silicon single
  • photovoltaic modules
  • shading

Cite this

@article{ef8b9bf72d474d118da78f369d628c6e,
title = "Effect of shading on amorphous silicon single and double junction photovoltaic modules",
abstract = "The effect of shading amorphous silicon photovoltaic mini-modules is investigated by means of measurements and simulation. Several devices are measured under varying degrees of shading and the reverse bias behaviour is investigated including the reverse breakdown voltage. A simulation using a modified single diode model for amorphous silicon is presented, in which the Bishop extension of the shunt resistance is used to simulate the behaviour of shaded devices. Agreement with measurements is discussed. The differences between the effect of shading on amorphous silicon and on crystalline silicon devices are investigated based on this model. It is shown that the thin film cells do not develop hot spots in the same manner as crystalline silicon devices, but always break down at the interconnection to the adjacent cell.",
keywords = "amorphous silicon single , photovoltaic modules , shading",
author = "A. Johansson and D.G. Infield",
year = "2004",
doi = "10.1080/01430750.2004.9674942",
language = "English",
volume = "25",
pages = "65--72",
journal = "International Journal of Ambient Energy",
issn = "0143-0750",
number = "2",

}

Effect of shading on amorphous silicon single and double junction photovoltaic modules. / Johansson, A.; Infield, D.G.

In: International Journal of Ambient Energy , Vol. 25, No. 2, 2004, p. 65-72.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of shading on amorphous silicon single and double junction photovoltaic modules

AU - Johansson, A.

AU - Infield, D.G.

PY - 2004

Y1 - 2004

N2 - The effect of shading amorphous silicon photovoltaic mini-modules is investigated by means of measurements and simulation. Several devices are measured under varying degrees of shading and the reverse bias behaviour is investigated including the reverse breakdown voltage. A simulation using a modified single diode model for amorphous silicon is presented, in which the Bishop extension of the shunt resistance is used to simulate the behaviour of shaded devices. Agreement with measurements is discussed. The differences between the effect of shading on amorphous silicon and on crystalline silicon devices are investigated based on this model. It is shown that the thin film cells do not develop hot spots in the same manner as crystalline silicon devices, but always break down at the interconnection to the adjacent cell.

AB - The effect of shading amorphous silicon photovoltaic mini-modules is investigated by means of measurements and simulation. Several devices are measured under varying degrees of shading and the reverse bias behaviour is investigated including the reverse breakdown voltage. A simulation using a modified single diode model for amorphous silicon is presented, in which the Bishop extension of the shunt resistance is used to simulate the behaviour of shaded devices. Agreement with measurements is discussed. The differences between the effect of shading on amorphous silicon and on crystalline silicon devices are investigated based on this model. It is shown that the thin film cells do not develop hot spots in the same manner as crystalline silicon devices, but always break down at the interconnection to the adjacent cell.

KW - amorphous silicon single

KW - photovoltaic modules

KW - shading

U2 - 10.1080/01430750.2004.9674942

DO - 10.1080/01430750.2004.9674942

M3 - Article

VL - 25

SP - 65

EP - 72

JO - International Journal of Ambient Energy

JF - International Journal of Ambient Energy

SN - 0143-0750

IS - 2

ER -