Abstract
We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 μm GaInNAs∕GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs∕GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well∕barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs∕GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics.
| Original language | English |
|---|---|
| Article number | 021903 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 87 |
| Early online date | 7 Jul 2005 |
| DOIs | |
| Publication status | Published - 2005 |
Keywords
- gallium compounds
- photoluminescence
- red shift
- MOCVD
- semiconductor growth
- phase epitaxial growth
- semiconductor quantum wells,
- III-V semiconductors
- indium compounds
- gallium arsenide
- semiconductor epitaxial layers,