Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson, K.S. Kim, T. Kim, Y.J. Park

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Abstract

We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 μm GaInNAs∕GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs∕GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well∕barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs∕GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics.
Original languageEnglish
Article number021903
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Early online date7 Jul 2005
DOIs
Publication statusPublished - 2005

Keywords

  • gallium compounds
  • photoluminescence
  • red shift
  • MOCVD
  • semiconductor growth
  • phase epitaxial growth
  • semiconductor quantum wells,
  • III-V semiconductors
  • indium compounds
  • gallium arsenide
  • semiconductor epitaxial layers,

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