Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson, K.S. Kim, T. Kim, Y.J. Park

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 μm GaInNAs∕GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs∕GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well∕barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs∕GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics.
LanguageEnglish
Article number021903
Pages1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Early online date7 Jul 2005
DOIs
Publication statusPublished - 2005

Fingerprint

vapor phase epitaxy
quantum wells
optical properties
wavelengths
quantum efficiency
insertion

Keywords

  • gallium compounds
  • photoluminescence
  • red shift
  • MOCVD
  • semiconductor growth
  • phase epitaxial growth
  • semiconductor quantum wells,
  • III-V semiconductors
  • indium compounds
  • gallium arsenide
  • semiconductor epitaxial layers,

Cite this

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title = "Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy",
abstract = "We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 μm GaInNAs∕GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs∕GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well∕barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs∕GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics.",
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author = "H.D. Sun and A.H. Clark and S. Calvez and M.D. Dawson and K.S. Kim and T. Kim and Y.J. Park",
year = "2005",
doi = "10.1063/1.1993758",
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pages = "1--3",
journal = "Applied Physics Letters",
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Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy. / Sun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.; Kim, K.S.; Kim, T.; Park, Y.J.

In: Applied Physics Letters, Vol. 87, 021903, 2005, p. 1-3.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy

AU - Sun, H.D.

AU - Clark, A.H.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Kim, K.S.

AU - Kim, T.

AU - Park, Y.J.

PY - 2005

Y1 - 2005

N2 - We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 μm GaInNAs∕GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs∕GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well∕barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs∕GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics.

AB - We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 μm GaInNAs∕GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs∕GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well∕barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs∕GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics.

KW - gallium compounds

KW - photoluminescence

KW - red shift

KW - MOCVD

KW - semiconductor growth

KW - phase epitaxial growth

KW - semiconductor quantum wells,

KW - III-V semiconductors

KW - indium compounds

KW - gallium arsenide

KW - semiconductor epitaxial layers,

U2 - 10.1063/1.1993758

DO - 10.1063/1.1993758

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JO - Applied Physics Letters

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SN - 0003-6951

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