Abstract
Effect of heat treatment in aluminium oxide (AlOx) preparation employing UV/ozone exposure of thermally-evaporated aluminium is reported. AlOx is combined with 1-octylphosphonic acid to form a gate dielectric in low-voltage organic thin-film transistors based on pentacene. 100°C-heating step that immediately follows UV/ozone oxidation of aluminium leads to a decrease in the transistor threshold voltage of up to 8% and a reduction in the gate dielectric current density for shorter UV/ozone exposure times. Transistors with AlOx prepared by 60-minute UV/ozone oxidation do not exhibit this effect. These results are explained in terms of reduced number of charged oxygen vacancies in the UV/ozone oxidized AlOx.
Original language | English |
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Pages (from-to) | 5182-5185 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 13 |
Issue number | 7 |
DOIs | |
Publication status | Published - Jul 2013 |
Event | E-MRS 2012 Spring Meeting - Strasbourg, France Duration: 14 May 2012 → 18 May 2012 |
Keywords
- heat treatment
- aluminium oxide preparation
- UV/ozone oxidation
- thin-film transistors
- organic