Effect of heat treatment in aluminium oxide preparation by UV/ozone oxidation for organic thin-film transistors

Krishna Chytanya Chinnam, Helena Gleskova

Research output: Contribution to journalArticle

Abstract

Effect of heat treatment in aluminium oxide (AlOx) preparation employing UV/ozone exposure of thermally-evaporated aluminium is reported. AlOx is combined with 1-octylphosphonic acid to form a gate dielectric in low-voltage organic thin-film transistors based on pentacene. 100°C-heating step that immediately follows UV/ozone oxidation of aluminium leads to a decrease in the transistor threshold voltage of up to 8% and a reduction in the gate dielectric current density for shorter UV/ozone exposure times. Transistors with AlOx prepared by 60-minute UV/ozone oxidation do not exhibit this effect. These results are explained in terms of reduced number of charged oxygen vacancies in the UV/ozone oxidized AlOx.

LanguageEnglish
Pages5182-5185
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number7
DOIs
Publication statusPublished - Jul 2013
EventE-MRS 2012 Spring Meeting - Strasbourg, France
Duration: 14 May 201218 May 2012

Fingerprint

Aluminum Oxide
Ozone
Thin film transistors
Hot Temperature
Heat treatment
Aluminum
Oxidation
Oxides
Gate dielectrics
Transistors
Heating
Oxygen vacancies
Threshold voltage
Oxygen
Current density
Acids
Electric potential

Keywords

  • heat treatment
  • aluminium oxide preparation
  • UV/ozone oxidation
  • thin-film transistors
  • organic

Cite this

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Effect of heat treatment in aluminium oxide preparation by UV/ozone oxidation for organic thin-film transistors. / Chinnam, Krishna Chytanya; Gleskova, Helena.

In: Journal of Nanoscience and Nanotechnology, Vol. 13, No. 7, 07.2013, p. 5182-5185.

Research output: Contribution to journalArticle

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