Effect of heat treatment in aluminium oxide preparation by UV/ozone oxidation for organic thin-film transistors

Krishna Chytanya Chinnam, Helena Gleskova

Research output: Contribution to journalArticle

Abstract

Effect of heat treatment in aluminium oxide (AlOx) preparation employing UV/ozone exposure of thermally-evaporated aluminium is reported. AlOx is combined with 1-octylphosphonic acid to form a gate dielectric in low-voltage organic thin-film transistors based on pentacene. 100°C-heating step that immediately follows UV/ozone oxidation of aluminium leads to a decrease in the transistor threshold voltage of up to 8% and a reduction in the gate dielectric current density for shorter UV/ozone exposure times. Transistors with AlOx prepared by 60-minute UV/ozone oxidation do not exhibit this effect. These results are explained in terms of reduced number of charged oxygen vacancies in the UV/ozone oxidized AlOx.

Original languageEnglish
Pages (from-to)5182-5185
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number7
DOIs
Publication statusPublished - Jul 2013
EventE-MRS 2012 Spring Meeting - Strasbourg, France
Duration: 14 May 201218 May 2012

Keywords

  • heat treatment
  • aluminium oxide preparation
  • UV/ozone oxidation
  • thin-film transistors
  • organic

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