Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond

A. Lohstroh, P. J. Sellin, S. G. Wang, A. W. Davies, J. Parkin, R. W. Martin, P. R. Edwards

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Abstract

The authors report correlations between variations in charge transport of electrons and holes in synthetic single crystal diamond and the presence of nitrogen impurities and dislocations. The spatial distribution of these defects was imaged using their characteristic luminescence emission and compared with maps of carrier drift length measured by ion beam induced charge imaging. The images indicate a reduction of electron and hole mobility-lifetime product due to nitrogen impurities and dislocations. Very good charge transport is achieved in selected regions where the dislocation density is minimal.

Original languageEnglish
Article number102111
Number of pages3
JournalApplied Physics Letters
Volume90
Issue number10
DOIs
Publication statusPublished - 7 Mar 2007

Keywords

  • CVD diamond
  • electrical properties
  • depostied diamond
  • detectors
  • radiation
  • films
  • transport
  • spectra
  • nuclear
  • beam

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