Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond

A. Lohstroh; P. J. Sellin; S. G. Wang; A. W. Davies; J. Parkin; R. W. Martin; P. R. Edwards

doi:10.1063/1.2711754

Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond

A. Lohstroh, P. J. Sellin, S. G. Wang, A. W. Davies, J. Parkin, R. W. Martin, P. R. Edwards

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Abstract

The authors report correlations between variations in charge transport of electrons and holes in synthetic single crystal diamond and the presence of nitrogen impurities and dislocations. The spatial distribution of these defects was imaged using their characteristic luminescence emission and compared with maps of carrier drift length measured by ion beam induced charge imaging. The images indicate a reduction of electron and hole mobility-lifetime product due to nitrogen impurities and dislocations. Very good charge transport is achieved in selected regions where the dislocation density is minimal.

Original language	English
Article number	102111
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	10
DOIs	https://doi.org/10.1063/1.2711754
Publication status	Published - 7 Mar 2007

Keywords

CVD diamond
electrical properties
depostied diamond
detectors
radiation
films
transport
spectra
nuclear
beam

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10.1063/1.2711754

Lohstroh2007APL90Final published version, 327 KB

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title = "Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond",

abstract = "The authors report correlations between variations in charge transport of electrons and holes in synthetic single crystal diamond and the presence of nitrogen impurities and dislocations. The spatial distribution of these defects was imaged using their characteristic luminescence emission and compared with maps of carrier drift length measured by ion beam induced charge imaging. The images indicate a reduction of electron and hole mobility-lifetime product due to nitrogen impurities and dislocations. Very good charge transport is achieved in selected regions where the dislocation density is minimal.",

keywords = "CVD diamond, electrical properties, depostied diamond, detectors, radiation, films, transport, spectra, nuclear, beam",

author = "A. Lohstroh and Sellin, {P. J.} and Wang, {S. G.} and Davies, {A. W.} and J. Parkin and Martin, {R. W.} and Edwards, {P. R.}",

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T1 - Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond

AU - Lohstroh, A.

AU - Sellin, P. J.

AU - Wang, S. G.

AU - Davies, A. W.

AU - Parkin, J.

AU - Martin, R. W.

AU - Edwards, P. R.

PY - 2007/3/7

Y1 - 2007/3/7

N2 - The authors report correlations between variations in charge transport of electrons and holes in synthetic single crystal diamond and the presence of nitrogen impurities and dislocations. The spatial distribution of these defects was imaged using their characteristic luminescence emission and compared with maps of carrier drift length measured by ion beam induced charge imaging. The images indicate a reduction of electron and hole mobility-lifetime product due to nitrogen impurities and dislocations. Very good charge transport is achieved in selected regions where the dislocation density is minimal.

AB - The authors report correlations between variations in charge transport of electrons and holes in synthetic single crystal diamond and the presence of nitrogen impurities and dislocations. The spatial distribution of these defects was imaged using their characteristic luminescence emission and compared with maps of carrier drift length measured by ion beam induced charge imaging. The images indicate a reduction of electron and hole mobility-lifetime product due to nitrogen impurities and dislocations. Very good charge transport is achieved in selected regions where the dislocation density is minimal.

KW - CVD diamond

KW - electrical properties

KW - depostied diamond

KW - detectors

KW - radiation

KW - films

KW - transport

KW - spectra

KW - nuclear

KW - beam

U2 - 10.1063/1.2711754

DO - 10.1063/1.2711754

M3 - Article

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102111

ER -

Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond

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Keywords

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