Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

W. van der Stricht, I. Moerman, P. Demeester, J. A. Crawley, E. J. Thrush, P. G. Middleton, C. Trager Cowan, K. P. O'Donnell

Research output: Contribution to journalConference article

15 Citations (Scopus)

Abstract

In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.

Original languageEnglish
Pages (from-to)231-236
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume395
Publication statusPublished - 1 Jan 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 26 Nov 19951 Dec 1995

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