Abstract
In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.
Original language | English |
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Pages (from-to) | 231-236 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 395 |
Publication status | Published - 1 Jan 1996 |
Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: 26 Nov 1995 → 1 Dec 1995 |