In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 1 Jan 1996|
|Event||Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA|
Duration: 26 Nov 1995 → 1 Dec 1995