Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

W. van der Stricht*, I. Moerman, P. Demeester, J. A. Crawley, E. J. Thrush, P. G. Middleton, C. Trager Cowan, K. P. O'Donnell

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

15 Citations (Scopus)

Abstract

In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.

Original languageEnglish
Pages (from-to)231-236
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume395
Publication statusPublished - 1 Jan 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 26 Nov 19951 Dec 1995

Fingerprint

Dive into the research topics of 'Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this