Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

W. van der Stricht; I. Moerman; P. Demeester; J. A. Crawley; E. J. Thrush; P. G. Middleton; C. Trager Cowan; K. P. O'Donnell

Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

W. van der Stricht^*, I. Moerman, P. Demeester, J. A. Crawley, E. J. Thrush, P. G. Middleton, C. Trager Cowan, K. P. O'Donnell

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Conference article › peer-review

15 Citations (Scopus)

Abstract

In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.

Original language	English
Pages (from-to)	231-236
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	395
Publication status	Published - 1 Jan 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: 26 Nov 1995 → 1 Dec 1995

Cite this

@article{c04d8e08eb52479a93a45cc9016c0aba,

title = "Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition",

abstract = "In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.",

author = "{van der Stricht}, W. and I. Moerman and P. Demeester and Crawley, {J. A.} and Thrush, {E. J.} and Middleton, {P. G.} and Cowan, {C. Trager} and O'Donnell, {K. P.}",

year = "1996",

month = jan,

day = "1",

language = "English",

volume = "395",

pages = "231--236",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Cambridge University Press",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

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TY - JOUR

T1 - Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

AU - van der Stricht, W.

AU - Moerman, I.

AU - Demeester, P.

AU - Crawley, J. A.

AU - Thrush, E. J.

AU - Middleton, P. G.

AU - Cowan, C. Trager

AU - O'Donnell, K. P.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.

AB - In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.

UR - http://www.scopus.com/inward/record.url?scp=0029771075&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029771075

SN - 0272-9172

VL - 395

SP - 231

EP - 236

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -

Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

Abstract

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