Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

W. van der Stricht; I. Moerman; P. Demeester; J. A. Crawley; E. J. Thrush; P. G. Middleton; C. Trager Cowan; K. P. O'Donnell

Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

W. van der Stricht, I. Moerman, P. Demeester, J. A. Crawley, E. J. Thrush, P. G. Middleton, C. Trager Cowan, K. P. O'Donnell

Physics

Research output: Contribution to journal › Conference article › peer-review

15 Citations (Scopus)

Abstract

In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.

Original language	English
Pages (from-to)	231-236
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	395
Publication status	Published - 1 Jan 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: 26 Nov 1995 → 1 Dec 1995

Cite this

@article{c04d8e08eb52479a93a45cc9016c0aba,

title = "Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition",

abstract = "In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.",

author = "{van der Stricht}, W. and I. Moerman and P. Demeester and Crawley, {J. A.} and Thrush, {E. J.} and Middleton, {P. G.} and Cowan, {C. Trager} and O'Donnell, {K. P.}",

year = "1996",

month = jan,

day = "1",

language = "English",

volume = "395",

pages = "231--236",

journal = "MRS Online Proceedings Library ",

issn = "1946-4274",

publisher = "Cambridge University Press",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

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TY - JOUR

T1 - Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

AU - van der Stricht, W.

AU - Moerman, I.

AU - Demeester, P.

AU - Crawley, J. A.

AU - Thrush, E. J.

AU - Middleton, P. G.

AU - Cowan, C. Trager

AU - O'Donnell, K. P.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.

AB - In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.

UR - http://www.scopus.com/inward/record.url?scp=0029771075&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029771075

VL - 395

SP - 231

EP - 236

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 1946-4274

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -

Effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

Abstract

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