E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure

V. I. Kozlovsky; V. Yu Bondarev; D. A. Sannikov; P. I. Kuznetsov; G. G. Yakushcheva; K. P. O'Donnell; C. Trager-Cowan

doi:10.1142/S0219581X04002000

E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure

V. I. Kozlovsky^*, V. Yu Bondarev, D. A. Sannikov, P. I. Kuznetsov, G. G. Yakushcheva, K. P. O'Donnell, C. Trager-Cowan

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.

Original language	English
Pages (from-to)	213-221
Number of pages	9
Journal	International Journal of Nanoscience
Volume	3
Issue number	1-2
DOIs	https://doi.org/10.1142/S0219581X04002000
Publication status	Published - 1 Feb 2004

Funding

We would like to thank A. A. Davydov and Yu. V. Korostelin for CdS single crystals, and Ya. K. Skasyrsky for help in carrying out some experiments. The work was supported by Russian Foundation of Basic Researches, grants 01-02-16409 and

Keywords

CdSSe/CdS
E-beam pumped VCSEL
II-type heterostructure
MQW

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10.1142/S0219581X04002000

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title = "E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure",

abstract = "The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.",

keywords = "CdSSe/CdS, E-beam pumped VCSEL, II-type heterostructure, MQW",

author = "Kozlovsky, \{V. I.\} and Bondarev, \{V. Yu\} and Sannikov, \{D. A.\} and Kuznetsov, \{P. I.\} and Yakushcheva, \{G. G.\} and O'Donnell, \{K. P.\} and C. Trager-Cowan",

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doi = "10.1142/S0219581X04002000",

language = "English",

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T1 - E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure

AU - Kozlovsky, V. I.

AU - Bondarev, V. Yu

AU - Sannikov, D. A.

AU - Kuznetsov, P. I.

AU - Yakushcheva, G. G.

AU - O'Donnell, K. P.

AU - Trager-Cowan, C.

PY - 2004/2/1

Y1 - 2004/2/1

N2 - The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.

AB - The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.

KW - CdSSe/CdS

KW - E-beam pumped VCSEL

KW - II-type heterostructure

KW - MQW

UR - https://www.scopus.com/pages/publications/13844255165

U2 - 10.1142/S0219581X04002000

DO - 10.1142/S0219581X04002000

M3 - Article

AN - SCOPUS:13844255165

SN - 0219-581X

VL - 3

SP - 213

EP - 221

JO - International Journal of Nanoscience

JF - International Journal of Nanoscience

IS - 1-2

ER -

E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure

Abstract

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Keywords

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