E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure

V. I. Kozlovsky; V. Yu Bondarev; D. A. Sannikov; P. I. Kuznetsov; G. G. Yakushcheva; K. P. O'Donnell; C. Trager-Cowan

doi:10.1142/S0219581X04002000

E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure

V. I. Kozlovsky, V. Yu Bondarev, D. A. Sannikov, P. I. Kuznetsov, G. G. Yakushcheva, K. P. O'Donnell, C. Trager-Cowan

Physics

Research output: Contribution to journal › Article

Abstract

The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.

Original language	English
Pages (from-to)	213-221
Number of pages	9
Journal	International Journal of Nanoscience
Volume	3
Issue number	1-2
DOIs	https://doi.org/10.1142/S0219581X04002000
Publication status	Published - 1 Feb 2004

Fingerprint

Metallorganic vapor phase epitaxy

Surface emitting lasers

Lasers

Electrons

threshold currents

vapor phase epitaxy

misalignment

lasers

lasing

alignment

electron beams

electron energy

Temperature

room temperature

Substrates

Surface morphology

Heterojunctions

Electron beams

Keywords

CdSSe/CdS
E-beam pumped VCSEL
II-type heterostructure
MQW

Cite this

Kozlovsky, V. I., Bondarev, V. Y., Sannikov, D. A., Kuznetsov, P. I., Yakushcheva, G. G., O'Donnell, K. P., & Trager-Cowan, C. (2004). E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure. International Journal of Nanoscience, 3(1-2), 213-221. https://doi.org/10.1142/S0219581X04002000

Kozlovsky, V. I. ; Bondarev, V. Yu ; Sannikov, D. A. ; Kuznetsov, P. I. ; Yakushcheva, G. G. ; O'Donnell, K. P. ; Trager-Cowan, C. / E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure. In: International Journal of Nanoscience. 2004 ; Vol. 3, No. 1-2. pp. 213-221.

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title = "E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure",

abstract = "The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.",

keywords = "CdSSe/CdS, E-beam pumped VCSEL, II-type heterostructure, MQW",

author = "Kozlovsky, {V. I.} and Bondarev, {V. Yu} and Sannikov, {D. A.} and Kuznetsov, {P. I.} and Yakushcheva, {G. G.} and O'Donnell, {K. P.} and C. Trager-Cowan",

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Kozlovsky, VI, Bondarev, VY, Sannikov, DA, Kuznetsov, PI, Yakushcheva, GG, O'Donnell, KP & Trager-Cowan, C 2004, 'E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure', International Journal of Nanoscience, vol. 3, no. 1-2, pp. 213-221. https://doi.org/10.1142/S0219581X04002000

E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure. / Kozlovsky, V. I.; Bondarev, V. Yu; Sannikov, D. A.; Kuznetsov, P. I.; Yakushcheva, G. G.; O'Donnell, K. P.; Trager-Cowan, C.

In: International Journal of Nanoscience, Vol. 3, No. 1-2, 01.02.2004, p. 213-221.

Research output: Contribution to journal › Article

TY - JOUR

T1 - E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure

AU - Kozlovsky, V. I.

AU - Bondarev, V. Yu

AU - Sannikov, D. A.

AU - Kuznetsov, P. I.

AU - Yakushcheva, G. G.

AU - O'Donnell, K. P.

AU - Trager-Cowan, C.

PY - 2004/2/1

Y1 - 2004/2/1

N2 - The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.

AB - The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.

KW - CdSSe/CdS

KW - E-beam pumped VCSEL

KW - II-type heterostructure

KW - MQW

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JO - International Journal of Nanoscience