E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure

V. I. Kozlovsky, V. Yu Bondarev, D. A. Sannikov, P. I. Kuznetsov, G. G. Yakushcheva, K. P. O'Donnell, C. Trager-Cowan

Research output: Contribution to journalArticle

Abstract

The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.

Original languageEnglish
Pages (from-to)213-221
Number of pages9
JournalInternational Journal of Nanoscience
Volume3
Issue number1-2
DOIs
Publication statusPublished - 1 Feb 2004

Keywords

  • CdSSe/CdS
  • E-beam pumped VCSEL
  • II-type heterostructure
  • MQW

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