E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure

V. I. Kozlovsky, V. Yu Bondarev, D. A. Sannikov, P. I. Kuznetsov, G. G. Yakushcheva, K. P. O'Donnell, C. Trager-Cowan

Research output: Contribution to journalArticle

Abstract

The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.

LanguageEnglish
Pages213-221
Number of pages9
JournalInternational Journal of Nanoscience
Volume3
Issue number1-2
DOIs
Publication statusPublished - 1 Feb 2004

Fingerprint

Metallorganic vapor phase epitaxy
Surface emitting lasers
Lasers
Electrons
threshold currents
vapor phase epitaxy
misalignment
lasers
lasing
alignment
electron beams
electron energy
Temperature
room temperature
Substrates
Surface morphology
Heterojunctions
Electron beams

Keywords

  • CdSSe/CdS
  • E-beam pumped VCSEL
  • II-type heterostructure
  • MQW

Cite this

Kozlovsky, V. I. ; Bondarev, V. Yu ; Sannikov, D. A. ; Kuznetsov, P. I. ; Yakushcheva, G. G. ; O'Donnell, K. P. ; Trager-Cowan, C. / E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure. In: International Journal of Nanoscience. 2004 ; Vol. 3, No. 1-2. pp. 213-221.
@article{b98d3ee81bd44af380b9ed5da515b534,
title = "E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure",
abstract = "The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.",
keywords = "CdSSe/CdS, E-beam pumped VCSEL, II-type heterostructure, MQW",
author = "Kozlovsky, {V. I.} and Bondarev, {V. Yu} and Sannikov, {D. A.} and Kuznetsov, {P. I.} and Yakushcheva, {G. G.} and O'Donnell, {K. P.} and C. Trager-Cowan",
year = "2004",
month = "2",
day = "1",
doi = "10.1142/S0219581X04002000",
language = "English",
volume = "3",
pages = "213--221",
journal = "International Journal of Nanoscience",
issn = "0219-581X",
number = "1-2",

}

E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure. / Kozlovsky, V. I.; Bondarev, V. Yu; Sannikov, D. A.; Kuznetsov, P. I.; Yakushcheva, G. G.; O'Donnell, K. P.; Trager-Cowan, C.

In: International Journal of Nanoscience, Vol. 3, No. 1-2, 01.02.2004, p. 213-221.

Research output: Contribution to journalArticle

TY - JOUR

T1 - E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure

AU - Kozlovsky, V. I.

AU - Bondarev, V. Yu

AU - Sannikov, D. A.

AU - Kuznetsov, P. I.

AU - Yakushcheva, G. G.

AU - O'Donnell, K. P.

AU - Trager-Cowan, C.

PY - 2004/2/1

Y1 - 2004/2/1

N2 - The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.

AB - The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.

KW - CdSSe/CdS

KW - E-beam pumped VCSEL

KW - II-type heterostructure

KW - MQW

UR - http://www.scopus.com/inward/record.url?scp=13844255165&partnerID=8YFLogxK

U2 - 10.1142/S0219581X04002000

DO - 10.1142/S0219581X04002000

M3 - Article

VL - 3

SP - 213

EP - 221

JO - International Journal of Nanoscience

T2 - International Journal of Nanoscience

JF - International Journal of Nanoscience

SN - 0219-581X

IS - 1-2

ER -

Kozlovsky VI, Bondarev VY, Sannikov DA, Kuznetsov PI, Yakushcheva GG, O'Donnell KP et al. E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure. International Journal of Nanoscience. 2004 Feb 1;3(1-2):213-221. https://doi.org/10.1142/S0219581X04002000