Abstract
The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.
| Language | English |
|---|---|
| Pages | 213-221 |
| Number of pages | 9 |
| Journal | International Journal of Nanoscience |
| Volume | 3 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 1 Feb 2004 |
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Keywords
- CdSSe/CdS
- E-beam pumped VCSEL
- II-type heterostructure
- MQW
Cite this
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E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure. / Kozlovsky, V. I.; Bondarev, V. Yu; Sannikov, D. A.; Kuznetsov, P. I.; Yakushcheva, G. G.; O'Donnell, K. P.; Trager-Cowan, C.
In: International Journal of Nanoscience, Vol. 3, No. 1-2, 01.02.2004, p. 213-221.Research output: Contribution to journal › Article
TY - JOUR
T1 - E-beam pumped VCSEL on MOVPE-grown hexagonal CdSSe/CdS MQW structure
AU - Kozlovsky, V. I.
AU - Bondarev, V. Yu
AU - Sannikov, D. A.
AU - Kuznetsov, P. I.
AU - Yakushcheva, G. G.
AU - O'Donnell, K. P.
AU - Trager-Cowan, C.
PY - 2004/2/1
Y1 - 2004/2/1
N2 - The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.
AB - The first electron-beam pumped VCSEL was fabricated on CdSSe/CdS MQW structure grown by metalorganic vapor phase epitaxy on CdS substrate misoriented by 12-16° from (0001) towards (1010). Substrate misorientation results in more perfect surface morphology and intense cathodoluminesence. Lasing in the 535-590 nm spectral range was achieved at room temperature with different VCSELs. The laser power maximum of one VCSEL was as high as 2 W at RT, with electron energy 50 keV and current 1.7 mA. The threshold current was lower than that for the bulk CdSSe laser although the heterostructure used in the VCSEL has the type-II band alignment.
KW - CdSSe/CdS
KW - E-beam pumped VCSEL
KW - II-type heterostructure
KW - MQW
UR - http://www.scopus.com/inward/record.url?scp=13844255165&partnerID=8YFLogxK
U2 - 10.1142/S0219581X04002000
DO - 10.1142/S0219581X04002000
M3 - Article
VL - 3
SP - 213
EP - 221
JO - International Journal of Nanoscience
T2 - International Journal of Nanoscience
JF - International Journal of Nanoscience
SN - 0219-581X
IS - 1-2
ER -