Dynamics of band filling in localized states

T. Breitkopf*, W. Petri, A. Reznitsky, H. Kalt, C. Klingshirn, K. O'Donnell

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We report on investigations of carrier dynamics in materials with intrinsic disorder. Two-dimensional structured semiconductors as well as ternary alloys are studied. Band filling at high excitation is observed and confirmed by model calculations assuming geminate pair recombination. In CdS1-xSex we see bleaching and stimulated emission in the region of localized states.

Original languageEnglish
Pages (from-to)275-278
Number of pages4
JournalMaterials Science Forum
Volume182-184
Publication statusPublished - 1 Jan 1995
EventProceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria
Duration: 26 Sept 199428 Sept 1994

Keywords

  • semiconductor materials
  • charge carriers
  • dynamics
  • electron energy levels
  • laser pulses
  • luminescence
  • mathematical models
  • semiconducting cadmium compounds
  • semiconductor quantum wells
  • streak cameras
  • superlattices
  • ternary systems

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