Dry etching of n-face GaN using two high-density plasma etch techniques

F. Rizzi, K. Bejtka, F. Semond, E. Gu, M.D. Dawson, I.M. Watson, R.W. Martin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper describes processing of GaN on the on the (000I) N-face surface, using two different high-density plasma etch techniques, inductively coupled plasma (ICP) etch, and electron cyclotron resonance (ECR) etching. ICP experiments used several different conditions employing Cl2-Ar-BCl3 or Cl2-Ar plasmas. The resulting maximum etch rates of 370-390 nm/min are approximately twice as high as etch rates for Ga-face (0001) GaN with the same recipes. ECR etching employed a Cl2-CH4-Ar recipe, which produced an average etch rate of 55 nm/min in a 20-minute etch process on N-face GaN. Both etch techniques increased the roughness of N-face GaN, but could produce surfaces with average roughness values below 3 nm. Selection of conditions with a dominant chemical etch contribution is important to maintain smooth surfaces. The use of both ICP and ECR etching in sequence is advantageous in situations where a GaN substrate several tens of microns in thickness must be thinned from the backside, stopping the etch in a suitable marker layer.
LanguageEnglish
Pages200-2003
Number of pages1803
JournalPhysica Status Solidi C
Volume4
Issue number1
DOIs
Publication statusPublished - 2007

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plasma density
electron cyclotron resonance
etching
roughness
stopping
markers

Keywords

  • high-density plasma
  • dry etching
  • etch techniques
  • inductively coupled plasma
  • electron cyclotron resonance

Cite this

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title = "Dry etching of n-face GaN using two high-density plasma etch techniques",
abstract = "This paper describes processing of GaN on the on the (000I) N-face surface, using two different high-density plasma etch techniques, inductively coupled plasma (ICP) etch, and electron cyclotron resonance (ECR) etching. ICP experiments used several different conditions employing Cl2-Ar-BCl3 or Cl2-Ar plasmas. The resulting maximum etch rates of 370-390 nm/min are approximately twice as high as etch rates for Ga-face (0001) GaN with the same recipes. ECR etching employed a Cl2-CH4-Ar recipe, which produced an average etch rate of 55 nm/min in a 20-minute etch process on N-face GaN. Both etch techniques increased the roughness of N-face GaN, but could produce surfaces with average roughness values below 3 nm. Selection of conditions with a dominant chemical etch contribution is important to maintain smooth surfaces. The use of both ICP and ECR etching in sequence is advantageous in situations where a GaN substrate several tens of microns in thickness must be thinned from the backside, stopping the etch in a suitable marker layer.",
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year = "2007",
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Dry etching of n-face GaN using two high-density plasma etch techniques. / Rizzi, F.; Bejtka, K.; Semond, F.; Gu, E.; Dawson, M.D.; Watson, I.M.; Martin, R.W.

In: Physica Status Solidi C, Vol. 4, No. 1, 2007, p. 200-2003.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Dry etching of n-face GaN using two high-density plasma etch techniques

AU - Rizzi, F.

AU - Bejtka, K.

AU - Semond, F.

AU - Gu, E.

AU - Dawson, M.D.

AU - Watson, I.M.

AU - Martin, R.W.

PY - 2007

Y1 - 2007

N2 - This paper describes processing of GaN on the on the (000I) N-face surface, using two different high-density plasma etch techniques, inductively coupled plasma (ICP) etch, and electron cyclotron resonance (ECR) etching. ICP experiments used several different conditions employing Cl2-Ar-BCl3 or Cl2-Ar plasmas. The resulting maximum etch rates of 370-390 nm/min are approximately twice as high as etch rates for Ga-face (0001) GaN with the same recipes. ECR etching employed a Cl2-CH4-Ar recipe, which produced an average etch rate of 55 nm/min in a 20-minute etch process on N-face GaN. Both etch techniques increased the roughness of N-face GaN, but could produce surfaces with average roughness values below 3 nm. Selection of conditions with a dominant chemical etch contribution is important to maintain smooth surfaces. The use of both ICP and ECR etching in sequence is advantageous in situations where a GaN substrate several tens of microns in thickness must be thinned from the backside, stopping the etch in a suitable marker layer.

AB - This paper describes processing of GaN on the on the (000I) N-face surface, using two different high-density plasma etch techniques, inductively coupled plasma (ICP) etch, and electron cyclotron resonance (ECR) etching. ICP experiments used several different conditions employing Cl2-Ar-BCl3 or Cl2-Ar plasmas. The resulting maximum etch rates of 370-390 nm/min are approximately twice as high as etch rates for Ga-face (0001) GaN with the same recipes. ECR etching employed a Cl2-CH4-Ar recipe, which produced an average etch rate of 55 nm/min in a 20-minute etch process on N-face GaN. Both etch techniques increased the roughness of N-face GaN, but could produce surfaces with average roughness values below 3 nm. Selection of conditions with a dominant chemical etch contribution is important to maintain smooth surfaces. The use of both ICP and ECR etching in sequence is advantageous in situations where a GaN substrate several tens of microns in thickness must be thinned from the backside, stopping the etch in a suitable marker layer.

KW - high-density plasma

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KW - etch techniques

KW - inductively coupled plasma

KW - electron cyclotron resonance

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