Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, E. Gu, M.D. Dawson, I.M. Watson, R.W. Martin

Research output: Contribution to journalConference Contributionpeer-review

1 Citation (Scopus)

Abstract

We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.
Original languageEnglish
Pages (from-to)414
Number of pages1
JournalSuperlattices and Microstructures
Volume41
Issue number5-6
DOIs
Publication statusPublished - Jun 2007

Keywords

  • GaN
  • InGaN
  • AlInN
  • quantum well
  • microcavity
  • wet etching
  • reflectance
  • cathodoluminescence
  • photoluminescence

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