Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, E. Gu, M.D. Dawson, I.M. Watson, R.W. Martin

Research output: Contribution to journalConference Contribution

1 Citation (Scopus)

Abstract

We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.
LanguageEnglish
Pages414
Number of pages1
JournalSuperlattices and Microstructures
Volume41
Issue number5-6
DOIs
Publication statusPublished - Jun 2007

Fingerprint

Microcavities
Mirrors
mirrors
Fabrication
fabrication
zirconium oxides
Silicon Dioxide
Zirconia
Semiconductor quantum wells
Q factors
Photoluminescence
Optical properties
Silica
quantum wells
silicon dioxide
photoluminescence
optical properties
cavities
Substrates
zirconium oxide

Keywords

  • GaN
  • InGaN
  • AlInN
  • quantum well
  • microcavity
  • wet etching
  • reflectance
  • cathodoluminescence
  • photoluminescence

Cite this

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title = "Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer",
abstract = "We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using {"}upper{"} and {"}lower{"} silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.",
keywords = "GaN, InGaN, AlInN, quantum well, microcavity, wet etching, reflectance, cathodoluminescence, photoluminescence",
author = "F. Rizzi and P.R. Edwards and K. Bejtka and F. Semond and E. Gu and M.D. Dawson and I.M. Watson and R.W. Martin",
year = "2007",
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journal = "Superlattices and Microstructures",
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Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer. / Rizzi, F.; Edwards, P.R.; Bejtka, K.; Semond, F.; Gu, E.; Dawson, M.D.; Watson, I.M.; Martin, R.W.

In: Superlattices and Microstructures, Vol. 41, No. 5-6, 06.2007, p. 414.

Research output: Contribution to journalConference Contribution

TY - JOUR

T1 - Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer

AU - Rizzi, F.

AU - Edwards, P.R.

AU - Bejtka, K.

AU - Semond, F.

AU - Gu, E.

AU - Dawson, M.D.

AU - Watson, I.M.

AU - Martin, R.W.

PY - 2007/6

Y1 - 2007/6

N2 - We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.

AB - We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.

KW - GaN

KW - InGaN

KW - AlInN

KW - quantum well

KW - microcavity

KW - wet etching

KW - reflectance

KW - cathodoluminescence

KW - photoluminescence

UR - http://dx.doi.org/10.1016/j.spmi.2007.03.031

U2 - 10.1016/j.spmi.2007.03.031

DO - 10.1016/j.spmi.2007.03.031

M3 - Conference Contribution

VL - 41

SP - 414

JO - Superlattices and Microstructures

T2 - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 5-6

ER -