Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer

F. Rizzi; P.R. Edwards; K. Bejtka; F. Semond; E. Gu; M.D. Dawson; I.M. Watson; R.W. Martin

doi:10.1016/j.spmi.2007.03.031

Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer

F. Rizzi, P.R. Edwards, K. Bejtka, F. Semond, E. Gu, M.D. Dawson, I.M. Watson, R.W. Martin

Research output: Contribution to journal › Conference Contribution › peer-review

1 Citation (Scopus)

Abstract

We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.

Original language	English
Pages (from-to)	414
Number of pages	1
Journal	Superlattices and Microstructures
Volume	41
Issue number	5-6
DOIs	https://doi.org/10.1016/j.spmi.2007.03.031
Publication status	Published - Jun 2007

Keywords

GaN
InGaN
AlInN
quantum well
microcavity
wet etching
reflectance
cathodoluminescence
photoluminescence

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10.1016/j.spmi.2007.03.031

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@article{4f5c1785ea834391bdc19bd1c4a327eb,

title = "Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer",

abstract = "We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using {"}upper{"} and {"}lower{"} silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.",

keywords = "GaN, InGaN, AlInN, quantum well, microcavity, wet etching, reflectance, cathodoluminescence, photoluminescence",

author = "F. Rizzi and P.R. Edwards and K. Bejtka and F. Semond and E. Gu and M.D. Dawson and I.M. Watson and R.W. Martin",

year = "2007",

month = jun,

doi = "10.1016/j.spmi.2007.03.031",

language = "English",

volume = "41",

pages = "414",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

number = "5-6",

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TY - JOUR

T1 - Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer

AU - Rizzi, F.

AU - Edwards, P.R.

AU - Bejtka, K.

AU - Semond, F.

AU - Gu, E.

AU - Dawson, M.D.

AU - Watson, I.M.

AU - Martin, R.W.

PY - 2007/6

Y1 - 2007/6

N2 - We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.

AB - We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.

KW - GaN

KW - InGaN

KW - AlInN

KW - quantum well

KW - microcavity

KW - wet etching

KW - reflectance

KW - cathodoluminescence

KW - photoluminescence

UR - http://dx.doi.org/10.1016/j.spmi.2007.03.031

U2 - 10.1016/j.spmi.2007.03.031

DO - 10.1016/j.spmi.2007.03.031

M3 - Conference Contribution

VL - 41

SP - 414

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 5-6

ER -

Double dielectric mirror InGaN/GaN microactivities formed using selective removal of an AlInN layer

Abstract

Keywords

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