Abstract
We describe the fabrication and optical properties of a 3λ/2 InGaN/GaN-based microcavity using "upper" and "lower" silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.
Original language | English |
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Pages (from-to) | 414 |
Number of pages | 1 |
Journal | Superlattices and Microstructures |
Volume | 41 |
Issue number | 5-6 |
DOIs | |
Publication status | Published - Jun 2007 |
Keywords
- GaN
- InGaN
- AlInN
- quantum well
- microcavity
- wet etching
- reflectance
- cathodoluminescence
- photoluminescence