Abstract
This paper presents a distributed matching network design method for the realization of broadband high-efficiency power amplifiers (PAs). Source-pull and load-pull simulations are employed to determine the optimal input and output impedances of a GaN transistor across 0.3-2.3 GHz. With the optimal source and load impedances across the desired bandwidth, the proposed method can be used to compute and optimize the distributed matching network directly without requiring close-form initial element values. This method will enable a PA to achieve high power added efficiency (PAE) over an ultra-wide bandwidth. A low-pass matching network is applied to implement the optimal impedances over the band. The measured results of the PA indicate a power gain of better than 10 dB and a typical output power of 20 W. The PAE is 59%-69% across a 153% bandwidth. The measurement demonstrates the excellence of the proposed method.
| Original language | English |
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| Number of pages | 3 |
| DOIs | |
| Publication status | Published - 1 Feb 2018 |
| Event | 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS) - Duration: 14 Dec 2017 → … |
Conference
| Conference | 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS) |
|---|---|
| Period | 14/12/17 → … |
Keywords
- broadband
- distributed matching network
- high-efficiency
- power amplifier
- impedance
- broadband amplifiers
- low-pass matching network
- distributed parameter networks
- gallium compounds
- UHF power amplifiers
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