Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor

A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we perform gate-based dispersive readout of an accumulation-mode silicon quantum dot. We observe that the response of an accumulation-mode gate detector is significantly affected by its bias voltage, particularly if this exceeds the threshold for electron accumulation. We discuss and explain these results in light of the competing capacitive contributions to the dispersive response.

LanguageEnglish
Article number212101
Number of pages5
JournalApplied Physics Letters
Volume110
Issue number21
DOIs
Publication statusPublished - 23 May 2017

Fingerprint

readout
quantum dots
sensors
silicon
electrometers
detectors
radio frequencies
chips
solid state
thresholds
electric potential
electrons

Keywords

  • charge detection
  • silicon quantum dots
  • quantum dots

Cite this

Rossi, A. ; Zhao, R. ; Dzurak, A. S. ; Gonzalez-Zalba, M. F. / Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor. In: Applied Physics Letters. 2017 ; Vol. 110, No. 21.
@article{5ba81eea78d140f595ccf9583737b24f,
title = "Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor",
abstract = "Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we perform gate-based dispersive readout of an accumulation-mode silicon quantum dot. We observe that the response of an accumulation-mode gate detector is significantly affected by its bias voltage, particularly if this exceeds the threshold for electron accumulation. We discuss and explain these results in light of the competing capacitive contributions to the dispersive response.",
keywords = "charge detection, silicon quantum dots, quantum dots",
author = "A. Rossi and R. Zhao and Dzurak, {A. S.} and Gonzalez-Zalba, {M. F.}",
year = "2017",
month = "5",
day = "23",
doi = "10.1063/1.4984224",
language = "English",
volume = "110",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "21",

}

Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor. / Rossi, A.; Zhao, R.; Dzurak, A. S.; Gonzalez-Zalba, M. F.

In: Applied Physics Letters, Vol. 110, No. 21, 212101, 23.05.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor

AU - Rossi, A.

AU - Zhao, R.

AU - Dzurak, A. S.

AU - Gonzalez-Zalba, M. F.

PY - 2017/5/23

Y1 - 2017/5/23

N2 - Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we perform gate-based dispersive readout of an accumulation-mode silicon quantum dot. We observe that the response of an accumulation-mode gate detector is significantly affected by its bias voltage, particularly if this exceeds the threshold for electron accumulation. We discuss and explain these results in light of the competing capacitive contributions to the dispersive response.

AB - Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we perform gate-based dispersive readout of an accumulation-mode silicon quantum dot. We observe that the response of an accumulation-mode gate detector is significantly affected by its bias voltage, particularly if this exceeds the threshold for electron accumulation. We discuss and explain these results in light of the competing capacitive contributions to the dispersive response.

KW - charge detection

KW - silicon quantum dots

KW - quantum dots

UR - http://www.scopus.com/inward/record.url?scp=85019763870&partnerID=8YFLogxK

UR - https://www.repository.cam.ac.uk/handle/1810/266659

U2 - 10.1063/1.4984224

DO - 10.1063/1.4984224

M3 - Article

VL - 110

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 212101

ER -