Disorder controlled hole transport in MEH-PPV

AR Inigo, Hsiang-Chih Chiu, Wunshain Fann, Ying-Sheng Huang, U-Ser Jeng, Tsang-Lang Lin, Chia-Hung Hsu, Kang-Yung Peng, Show-An Chen

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

We analyze the correlation between nanostructure and charge transport in poly(2-methoxy,5-(2'ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) films. The MEH-PPV films prepared in toluene (TL) as well as chlorobenzene (CB) solvents were investigated using the time-of-flight method and x-ray scattering. Nondispersive hole transport was observed at room temperature in devices prepared from both solutions. The field and temperature-dependent mobility were analyzed by the Gaussian disorder transport model. The positional disorder parameter in CB is larger than that in TL films. Both energy and position disorders affect the transport property in the devices from CB whereas only energy disorder affects this property in devices from TL. Correspondingly, according to the x-ray scattering measurements, the TL-cast films have larger chain-packed domains and less order-disorder transition interfaces than those for CB-cast films, along the surface normal, i.e., the charge transport direction.

LanguageEnglish
Article number075201
Number of pages8
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume69
Issue number7
DOIs
Publication statusPublished - 2 Feb 2004

Fingerprint

chlorobenzenes
Toluene
disorders
toluene
x ray scattering
Charge transfer
casts
Scattering
X rays
Order disorder transitions
Transport properties
Nanostructures
transport properties
Temperature
chlorobenzene
energy
room temperature
temperature

Keywords

  • Poly(p-phenylene vinylene)s
  • molecularly doped polymers
  • film morphology
  • interchain interactions
  • charge-transport
  • device performance
  • light-emitting-diodes
  • polar additives
  • conjugated polymers
  • field dependence

Cite this

Inigo, AR., Chiu, H-C., Fann, W., Huang, Y-S., Jeng, U-S., Lin, T-L., ... Chen, S-A. (2004). Disorder controlled hole transport in MEH-PPV. Physical Review B: Condensed Matter and Materials Physics, 69(7), [075201]. https://doi.org/10.1103/PhysRevB.69.075201
Inigo, AR ; Chiu, Hsiang-Chih ; Fann, Wunshain ; Huang, Ying-Sheng ; Jeng, U-Ser ; Lin, Tsang-Lang ; Hsu, Chia-Hung ; Peng, Kang-Yung ; Chen, Show-An. / Disorder controlled hole transport in MEH-PPV. In: Physical Review B: Condensed Matter and Materials Physics. 2004 ; Vol. 69, No. 7.
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abstract = "We analyze the correlation between nanostructure and charge transport in poly(2-methoxy,5-(2'ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) films. The MEH-PPV films prepared in toluene (TL) as well as chlorobenzene (CB) solvents were investigated using the time-of-flight method and x-ray scattering. Nondispersive hole transport was observed at room temperature in devices prepared from both solutions. The field and temperature-dependent mobility were analyzed by the Gaussian disorder transport model. The positional disorder parameter in CB is larger than that in TL films. Both energy and position disorders affect the transport property in the devices from CB whereas only energy disorder affects this property in devices from TL. Correspondingly, according to the x-ray scattering measurements, the TL-cast films have larger chain-packed domains and less order-disorder transition interfaces than those for CB-cast films, along the surface normal, i.e., the charge transport direction.",
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Inigo, AR, Chiu, H-C, Fann, W, Huang, Y-S, Jeng, U-S, Lin, T-L, Hsu, C-H, Peng, K-Y & Chen, S-A 2004, 'Disorder controlled hole transport in MEH-PPV' Physical Review B: Condensed Matter and Materials Physics, vol. 69, no. 7, 075201. https://doi.org/10.1103/PhysRevB.69.075201

Disorder controlled hole transport in MEH-PPV. / Inigo, AR; Chiu, Hsiang-Chih; Fann, Wunshain; Huang, Ying-Sheng; Jeng, U-Ser; Lin, Tsang-Lang; Hsu, Chia-Hung; Peng, Kang-Yung; Chen, Show-An.

In: Physical Review B: Condensed Matter and Materials Physics, Vol. 69, No. 7, 075201, 02.02.2004.

Research output: Contribution to journalArticle

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AU - Inigo, AR

AU - Chiu, Hsiang-Chih

AU - Fann, Wunshain

AU - Huang, Ying-Sheng

AU - Jeng, U-Ser

AU - Lin, Tsang-Lang

AU - Hsu, Chia-Hung

AU - Peng, Kang-Yung

AU - Chen, Show-An

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N2 - We analyze the correlation between nanostructure and charge transport in poly(2-methoxy,5-(2'ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) films. The MEH-PPV films prepared in toluene (TL) as well as chlorobenzene (CB) solvents were investigated using the time-of-flight method and x-ray scattering. Nondispersive hole transport was observed at room temperature in devices prepared from both solutions. The field and temperature-dependent mobility were analyzed by the Gaussian disorder transport model. The positional disorder parameter in CB is larger than that in TL films. Both energy and position disorders affect the transport property in the devices from CB whereas only energy disorder affects this property in devices from TL. Correspondingly, according to the x-ray scattering measurements, the TL-cast films have larger chain-packed domains and less order-disorder transition interfaces than those for CB-cast films, along the surface normal, i.e., the charge transport direction.

AB - We analyze the correlation between nanostructure and charge transport in poly(2-methoxy,5-(2'ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) films. The MEH-PPV films prepared in toluene (TL) as well as chlorobenzene (CB) solvents were investigated using the time-of-flight method and x-ray scattering. Nondispersive hole transport was observed at room temperature in devices prepared from both solutions. The field and temperature-dependent mobility were analyzed by the Gaussian disorder transport model. The positional disorder parameter in CB is larger than that in TL films. Both energy and position disorders affect the transport property in the devices from CB whereas only energy disorder affects this property in devices from TL. Correspondingly, according to the x-ray scattering measurements, the TL-cast films have larger chain-packed domains and less order-disorder transition interfaces than those for CB-cast films, along the surface normal, i.e., the charge transport direction.

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KW - light-emitting-diodes

KW - polar additives

KW - conjugated polymers

KW - field dependence

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