Direct LED writing of submicron resist patterns

towards the fabrication of individually-addressable InGaN submicron stripe-shaped LED arrays

Zheng Gong, Benoit Guilhabert, Zhitao Chen, Martin D. Dawson

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Abstract

Submicron stripe-shaped InGaN light-emitting diode (LED) arrays with individually addressable capabilities are demonstrated. The critical submicronstripe metallic electrodes, which define the emission pattern, are formed by direct LED writing in a mask-free manner. The individually addressable submicron-stripe LEDs show excellent performance in terms of their electrical characteristics (with typical turn-on voltage of 3 V, operational stability and power output up to 28 μW at 3 mA). Unlike conventional broad-sized LEDs, the efficiency droop of the submicron-stripe LED is significantly suppressed-in fact, there is no efficiency droop for current densities up to 100 A/cm2. Furthermore, the submicron-stripe LED shows a lower temperature-dependent shift of the emission wavelength. The lateral emission width is increased with increasing injection current, resulting in a wider lateral emission size than the metallic submicron-stripe electrode. The underlying physics of these phenomena are analysed. Such submicron-stripe LED arrays open up promising applications in nanophotonics and bio-sensing.
Original languageEnglish
Pages (from-to)1849-1860
Number of pages12
JournalNano Research
Volume7
Issue number12
Early online date9 Sep 2014
DOIs
Publication statusPublished - Dec 2014

Fingerprint

Light emitting diodes
light emitting diodes
Fabrication
fabrication
Nanophotonics
Electrodes
electrodes
Masks
Current density
masks
Physics
injection
current density
Wavelength
physics
output
shift
Electric potential
electric potential
wavelengths

Keywords

  • direct writing
  • light-emitting diodes
  • electroluminescence
  • efficiency droop
  • mask-free lithography

Cite this

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title = "Direct LED writing of submicron resist patterns: towards the fabrication of individually-addressable InGaN submicron stripe-shaped LED arrays",
abstract = "Submicron stripe-shaped InGaN light-emitting diode (LED) arrays with individually addressable capabilities are demonstrated. The critical submicronstripe metallic electrodes, which define the emission pattern, are formed by direct LED writing in a mask-free manner. The individually addressable submicron-stripe LEDs show excellent performance in terms of their electrical characteristics (with typical turn-on voltage of 3 V, operational stability and power output up to 28 μW at 3 mA). Unlike conventional broad-sized LEDs, the efficiency droop of the submicron-stripe LED is significantly suppressed-in fact, there is no efficiency droop for current densities up to 100 A/cm2. Furthermore, the submicron-stripe LED shows a lower temperature-dependent shift of the emission wavelength. The lateral emission width is increased with increasing injection current, resulting in a wider lateral emission size than the metallic submicron-stripe electrode. The underlying physics of these phenomena are analysed. Such submicron-stripe LED arrays open up promising applications in nanophotonics and bio-sensing.",
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author = "Zheng Gong and Benoit Guilhabert and Zhitao Chen and Dawson, {Martin D.}",
year = "2014",
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TY - JOUR

T1 - Direct LED writing of submicron resist patterns

T2 - towards the fabrication of individually-addressable InGaN submicron stripe-shaped LED arrays

AU - Gong, Zheng

AU - Guilhabert, Benoit

AU - Chen, Zhitao

AU - Dawson, Martin D.

PY - 2014/12

Y1 - 2014/12

N2 - Submicron stripe-shaped InGaN light-emitting diode (LED) arrays with individually addressable capabilities are demonstrated. The critical submicronstripe metallic electrodes, which define the emission pattern, are formed by direct LED writing in a mask-free manner. The individually addressable submicron-stripe LEDs show excellent performance in terms of their electrical characteristics (with typical turn-on voltage of 3 V, operational stability and power output up to 28 μW at 3 mA). Unlike conventional broad-sized LEDs, the efficiency droop of the submicron-stripe LED is significantly suppressed-in fact, there is no efficiency droop for current densities up to 100 A/cm2. Furthermore, the submicron-stripe LED shows a lower temperature-dependent shift of the emission wavelength. The lateral emission width is increased with increasing injection current, resulting in a wider lateral emission size than the metallic submicron-stripe electrode. The underlying physics of these phenomena are analysed. Such submicron-stripe LED arrays open up promising applications in nanophotonics and bio-sensing.

AB - Submicron stripe-shaped InGaN light-emitting diode (LED) arrays with individually addressable capabilities are demonstrated. The critical submicronstripe metallic electrodes, which define the emission pattern, are formed by direct LED writing in a mask-free manner. The individually addressable submicron-stripe LEDs show excellent performance in terms of their electrical characteristics (with typical turn-on voltage of 3 V, operational stability and power output up to 28 μW at 3 mA). Unlike conventional broad-sized LEDs, the efficiency droop of the submicron-stripe LED is significantly suppressed-in fact, there is no efficiency droop for current densities up to 100 A/cm2. Furthermore, the submicron-stripe LED shows a lower temperature-dependent shift of the emission wavelength. The lateral emission width is increased with increasing injection current, resulting in a wider lateral emission size than the metallic submicron-stripe electrode. The underlying physics of these phenomena are analysed. Such submicron-stripe LED arrays open up promising applications in nanophotonics and bio-sensing.

KW - direct writing

KW - light-emitting diodes

KW - electroluminescence

KW - efficiency droop

KW - mask-free lithography

U2 - 10.1007/s12274-014-0545-5

DO - 10.1007/s12274-014-0545-5

M3 - Article

VL - 7

SP - 1849

EP - 1860

JO - Nano Research

JF - Nano Research

SN - 1998-0124

IS - 12

ER -