Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

L. Nistor; H. Bender; A. Vantomme; M. F. Wu; J. Van Landuyt; K. P. O'Donnell; R. Martin; K. Jacobs; I. Moerman

doi:10.1063/1.127026

Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

L. Nistor^*, H. Bender, A. Vantomme, M. F. Wu, J. Van Landuyt, K. P. O'Donnell, R. Martin, K. Jacobs, I. Moerman

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In_0.22Ga_0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen.

Original language	English
Pages (from-to)	507-509
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	4
DOIs	https://doi.org/10.1063/1.127026
Publication status	Published - 24 Jul 2000

Keywords

quantum dots
InGaN epilayers
luminescence spectra

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10.1063/1.127026

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title = "Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer",

abstract = "We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen.",

keywords = "quantum dots, InGaN epilayers, luminescence spectra",

author = "L. Nistor and H. Bender and A. Vantomme and Wu, \{M. F.\} and \{Van Landuyt\}, J. and O'Donnell, \{K. P.\} and R. Martin and K. Jacobs and I. Moerman",

year = "2000",

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doi = "10.1063/1.127026",

language = "English",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Inc.",

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TY - JOUR

T1 - Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

AU - Nistor, L.

AU - Bender, H.

AU - Vantomme, A.

AU - Wu, M. F.

AU - Van Landuyt, J.

AU - O'Donnell, K. P.

AU - Martin, R.

AU - Jacobs, K.

AU - Moerman, I.

PY - 2000/7/24

Y1 - 2000/7/24

N2 - We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen.

AB - We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen.

KW - quantum dots

KW - InGaN epilayers

KW - luminescence spectra

UR - https://www.scopus.com/pages/publications/0000640186

U2 - 10.1063/1.127026

DO - 10.1063/1.127026

M3 - Article

AN - SCOPUS:0000640186

SN - 0003-6951

VL - 77

SP - 507

EP - 509

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

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Keywords

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