Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

L. Nistor, H. Bender, A. Vantomme, M. F. Wu, J. Van Landuyt, K. P. O'Donnell, R. Martin, K. Jacobs, I. Moerman

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Abstract

We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen.

Original languageEnglish
Pages (from-to)507-509
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number4
DOIs
Publication statusPublished - 24 Jul 2000

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Keywords

  • quantum dots
  • InGaN epilayers
  • luminescence spectra

Cite this

Nistor, L., Bender, H., Vantomme, A., Wu, M. F., Van Landuyt, J., O'Donnell, K. P., ... Moerman, I. (2000). Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer. Applied Physics Letters, 77(4), 507-509. https://doi.org/10.1063/1.127026