Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

L. Nistor, H. Bender, A. Vantomme, M. F. Wu, J. Van Landuyt, K. P. O'Donnell, R. Martin, K. Jacobs, I. Moerman

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Abstract

We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen.

Original languageEnglish
Pages (from-to)507-509
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number4
DOIs
Publication statusPublished - 24 Jul 2000

Keywords

  • quantum dots
  • InGaN epilayers
  • luminescence spectra

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