Diode-pumped femtosecond Tm3+-doped LuScO3 laser near 2.1  μm

N. K. Stevenson; C. T. A. Brown; J.-M. Hopkins; M. D. Dawson; C. Kränkel; A. A. Lagatsky

doi:10.1364/OL.43.001287

Diode-pumped femtosecond Tm³⁺-doped LuScO₃ laser near 2.1 μm

N. K. Stevenson, C. T. A. Brown, J.-M. Hopkins, M. D. Dawson, C. Kränkel, A. A. Lagatsky

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Abstract

We report on the first demonstration, to the best of our knowledge, of a diode-pumped Tm:LuScO₃ laser. Efficient and broadly tunable continuous wave operation in the 1973–2141 nm region and femtosecond mode-locking through the use of an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror are realized. When mode-locked, near-transform-limited pulses as short as 170 fs were generated at 2093 nm with an average output power of 113 mW and a pulse repetition frequency of 115.2 MHz. Tunable picosecond pulse generation was demonstrated in the 2074–2104 nm spectral range.

Original language	English
Pages (from-to)	1287-1290
Number of pages	4
Journal	Optics Letters
Volume	43
Issue number	6
Early online date	9 Mar 2018
DOIs	https://doi.org/10.1364/OL.43.001287
Publication status	Published - 15 Mar 2018

Keywords

ultrafast lasers
mode-locked lasers
rare earth and transition metal solid-state lasers
infrared and far-infrared lasers

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10.1364/OL.43.001287

Stevenson-etal-OL-2018-Diode-pumped-femtosecond-Tm3Accepted author manuscript, 1.27 MB

https://risweb.st-andrews.ac.uk/portal/en/researchoutput/diodepumped-femtosecond-tm3doped-lusco3-laser-near-21-m(0e15a478-2eb6-4e9d-8108-a7dd593a8080).html

Data for: "Diode-pumped femtosecond Tm3+-doped LuScO3 laser near 2.1 µm"
Stevenson, N. K. (Creator), Brown, C. T. A. (Contributor), Hopkins, J. (Contributor), Dawson, M. (Contributor), Kränkel, C. (Contributor) & Lagatsky, A. A. (Contributor), University of St Andrews, 27 Apr 2023
DOI: 10.17630/198f360d-3b1d-4b83-933c-5608ef15457e
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Cite this

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title = "Diode-pumped femtosecond Tm3+-doped LuScO3 laser near 2.1 μm",

abstract = "We report on the first demonstration, to the best of our knowledge, of a diode-pumped Tm:LuScO3 laser. Efficient and broadly tunable continuous wave operation in the 1973–2141 nm region and femtosecond mode-locking through the use of an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror are realized. When mode-locked, near-transform-limited pulses as short as 170 fs were generated at 2093 nm with an average output power of 113 mW and a pulse repetition frequency of 115.2 MHz. Tunable picosecond pulse generation was demonstrated in the 2074–2104 nm spectral range.",

keywords = "ultrafast lasers, mode-locked lasers, rare earth and transition metal solid-state lasers, infrared and far-infrared lasers",

author = "Stevenson, {N. K.} and Brown, {C. T. A.} and J.-M. Hopkins and Dawson, {M. D.} and C. Kr{\"a}nkel and Lagatsky, {A. A.}",

year = "2018",

month = mar,

day = "15",

doi = "10.1364/OL.43.001287",

language = "English",

volume = "43",

pages = "1287--1290",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "Optical Society of America",

number = "6",

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TY - JOUR

T1 - Diode-pumped femtosecond Tm3+-doped LuScO3 laser near 2.1 μm

AU - Stevenson, N. K.

AU - Brown, C. T. A.

AU - Hopkins, J.-M.

AU - Dawson, M. D.

AU - Kränkel, C.

AU - Lagatsky, A. A.

PY - 2018/3/15

Y1 - 2018/3/15

N2 - We report on the first demonstration, to the best of our knowledge, of a diode-pumped Tm:LuScO3 laser. Efficient and broadly tunable continuous wave operation in the 1973–2141 nm region and femtosecond mode-locking through the use of an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror are realized. When mode-locked, near-transform-limited pulses as short as 170 fs were generated at 2093 nm with an average output power of 113 mW and a pulse repetition frequency of 115.2 MHz. Tunable picosecond pulse generation was demonstrated in the 2074–2104 nm spectral range.

AB - We report on the first demonstration, to the best of our knowledge, of a diode-pumped Tm:LuScO3 laser. Efficient and broadly tunable continuous wave operation in the 1973–2141 nm region and femtosecond mode-locking through the use of an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror are realized. When mode-locked, near-transform-limited pulses as short as 170 fs were generated at 2093 nm with an average output power of 113 mW and a pulse repetition frequency of 115.2 MHz. Tunable picosecond pulse generation was demonstrated in the 2074–2104 nm spectral range.

KW - ultrafast lasers

KW - mode-locked lasers

KW - rare earth and transition metal solid-state lasers

KW - infrared and far-infrared lasers

U2 - 10.1364/OL.43.001287

DO - 10.1364/OL.43.001287

M3 - Article

SN - 0146-9592

VL - 43

SP - 1287

EP - 1290

JO - Optics Letters

JF - Optics Letters

IS - 6

ER -

Diode-pumped femtosecond Tm3+-doped LuScO3 laser near 2.1 μm

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Data for: "Diode-pumped femtosecond Tm3+-doped LuScO3 laser near 2.1 µm"

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Diode-pumped femtosecond Tm³⁺-doped LuScO₃ laser near 2.1 μm